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Thermal interface materials for semiconductors 2026

Thermal Interface Materials for Advanced Semiconductor Packaging 2026 — PatSnap Insights
Materials Science & Packaging

The thermal interface material sector for semiconductor packaging is under acute innovation pressure in 2026, driven by compute density scaling and heterogeneous integration architectures. Drawing on more than 50 patent records and peer-reviewed sources, this analysis maps the dominant material platforms, key application domains, and the competitive positions of assignees reshaping the field.

PatSnap Insights Team Innovation Intelligence Analysts 11 min read
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Reviewed by the PatSnap Insights editorial team ·

Material Platforms: From Polymer Composites to Liquid Metals

The foundational challenge for all thermal interface material (TIM) formulations is simultaneously achieving high bulk thermal conductivity, low bond-line resistance, mechanical compliance, and long-term reliability under thermal cycling. Polymer-matrix composites loaded with thermally conductive fillers — including boron nitride, aluminum oxide, and metallic particles — continue to dominate commercial deployments, with innovation focused on filler particle engineering at the nanoscale and microscale.

50+
Patent records & literature sources analysed
>3,000
W/m·K graphene in-plane thermal conductivity
30–70%
Liquid metal droplet loading by volume (Arika)
500 kPa
Maximum TIM elastic modulus for stacked-die packages

A dual-filler architecture — pairing a first thermally conductive filler of larger particle size with a second filler of smaller particle size — has been extensively developed and patented by Honeywell International. This bimodal filler system integrates phase-change materials (PCMs) to enable the TIM to transition from solid to conformable states at operating temperatures, dramatically reducing interfacial contact resistance. The approach is protected across multiple jurisdictions, including EP and Singapore grants filed between 2017 and 2021.

A complementary strategy involves mixing particles of different geometrical aspect ratios rather than simply different sizes. Henkel IP & Holding GmbH’s EP patent (2021) discloses a combination of substantially spherical and substantially platelet-shaped particles within a dispersion that simultaneously achieves efficient thermal conduction and electromagnetic interference (EMI) suppression — a functionality bundle increasingly relevant as operating frequencies rise in advanced packages. Platelet geometry promotes through-plane conductivity by creating anisotropic percolation pathways, while spherical particles fill interstitial voids, maximising packing density without sacrificing matrix compliance.

Graphene’s intrinsic in-plane thermal conductivity exceeds 3,000 W/m·K. Graphene-based thermal interface materials have evolved from maximum-conductivity-oriented composite development to addressing the practical challenges of minimising contact resistance at interfaces, optimising graphene flake size distribution, and resolving scalability and production cost concerns, as documented by the University of California Riverside (2022).

Carbon-based TIMs, particularly those exploiting graphene’s properties, have matured from laboratory curiosities to near-commercial materials. The architectural taxonomy for graphene TIMs — dispersed graphene/polymers, graphene framework/polymers, and inorganic graphene-based monoliths — is well established in the literature. Framework architectures provide superior through-plane conductivity by establishing connected graphene networks rather than relying on statistical percolation, according to research from Nature-indexed journals and Shanghai University (2018). Kaneka Corporation’s EP patent (2025) discloses an ultra-thin graphite film TIM with thickness between 200 nm and 3 µm and a surface roughness-to-thickness ratio of 0.1 to 30, targeting sub-100-µm bond-line applications in advanced logic packages.

“Liquid-metal-in-polymer TIMs achieve a strain limit of at least 100% and a lap shear strength of at least 1 MPa — mechanical properties critical for packages subject to CTE mismatch cycling.”

On the frontier of non-filler-composite approaches, liquid metal dispersed in elastomeric matrices represents the most disruptive near-term technology. Arika Incorporated’s JP and CN filings (2024–2025) disclose a TIM incorporating liquid metal droplets dispersed throughout a multi-component polydimethylsiloxane (PDMS) matrix, with droplet loading ranging from 30% to 70% by volume. Chinese academic research published in 2020 confirmed that leakage control during compression is the pivotal engineering challenge for this material class, with micropillar surface arrays proposed as a structural solution.

Figure 1 — Thermal Interface Material Platform Comparison: Key Performance Attributes
Thermal Interface Material Platform Comparison for Semiconductor Packaging — Key Attributes by Material Category 0 25 50 75 100 Relative Score (0–100) 40 75 55 100 50 60 80 85 40 55 75 70 Polymer Composite Graphene -Based Liquid Metal / PDMS Phase-Change (PCM) Thermal Conductivity Mechanical Compliance High-Temp Capability
Relative attribute scores across the four dominant TIM platform categories, derived from patent claims and literature data. Graphene-based TIMs lead on thermal conductivity; liquid-metal/PDMS systems lead on mechanical compliance. Scores are normalised for comparative illustration.

Ningbo Institute of Materials Technology and Engineering (Chinese Academy of Sciences) has introduced a structurally innovative laminated TIM in which two-dimensional high-conductivity nanoplates are configured with both horizontal and vertical stack orientations through bending, folding, and optional high-temperature treatment (EP, 2023). This dual-orientation architecture simultaneously provides excellent through-thickness thermal conductivity and compressibility — a property combination typically in tension in conventional designs.

Application Domains: CPU Packages, Power Modules, and Heterogeneous Integration

Thermal interface materials serve distinct functions across different package architectures, and the requirements in each domain are sufficiently different that one-size-fits-all formulations are giving way to application-tuned designs. In CPU and data center processor packaging, the TIM stack typically involves a TIM1 between the die and the integrated heat spreader (IHS) and a TIM2 between the IHS and the heat sink.

Bond-Line Thickness Design Rule

Laird Technologies’ CN patent specifies that bond-line thickness should be at least 1.1 times the maximum filler particle diameter — a design rule ensuring surface asperities are bridged without voids. Application uniformity and controlled bond-line thickness are cited as equally critical to material thermal conductivity for achieving low thermal impedance in production environments.

IBM’s GB patent (2020) addresses a specific failure mode at CPU-package TIM interfaces — grease pumping and gel delamination in thin bond-line regions under high-power devices — by disclosing overlapping dual-layer TIM structures that mitigate the problem while eliminating the need for expensive plasma treatment or curing processes, enabling field replacement in water-cooled systems. Intel Corporation, meanwhile, has developed an integrated TIM stack architecture for optical transceiver packages, where laser die temperatures must be tightly controlled to maintain emission wavelength stability. The disclosed heat extraction path (EP, 2022) comprises a TIM layer of 25–80 µm thickness over the IC die, an integrated heat spreader, a ceramic carrier plate, and a conductive thermal pad between the carrier and the package housing.

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Wide-bandgap (WBG) power semiconductor modules using silicon carbide (SiC) and gallium nitride (GaN) devices require die-attach and interface materials capable of sustained operation above 200°C, creating a performance gap that conventional polymer-matrix thermal interface materials do not fully address. This drives interest in sintered silver and transient liquid phase bonding as TIM alternatives, as established in the 2018 High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules roadmap analysis.

Power semiconductor modules using wide-bandgap (WBG) devices impose extreme demands on TIMs due to higher operating temperatures and higher power densities than silicon-based predecessors. Deere & Company’s EP patent (2021) specifically addresses power module thermal performance by embedding phase-change material into pocket chambers within the source terminal metallic strip assembly of insulated-gate bipolar transistors (IGBTs), exploiting latent heat absorption to buffer transient thermal excursions. Infineon Technologies Austria’s EP patent (2025) discloses an electrically insulating and thermally conductive interface structure with a glass transition temperature engineered in the range of −40°C to 150°C, ensuring that the interface material remains compliant across the full automotive operating temperature range while providing the electrical isolation demanded in power modules.

Figure 2 — TIM Application Domain Map: Key Requirements by Package Type
Thermal Interface Material Requirements by Semiconductor Package Application Domain — CPU, Power Modules, Optical Transceivers, Stacked-Die SiP CPU / Server • TIM1: die → IHS • TIM2: IHS → heat sink • Bond-line ≥1.1× filler Ø • Grease pump resistance • Re-workability critical • Key assignees: IBM, Honeywell, Laird Power Modules • SiC / GaN WBG devices • Sustained >200°C needed • −40°C to 150°C Tg range • Electrical isolation req’d • PCM latent heat buffering • Key assignees: Infineon, Deere, ABB Optical Transceiver • TIM layer: 25–80 µm • Wavelength stability req • Ceramic carrier spreader • No direct laser contact • Conductive thermal pad • Key assignee: Intel Stacked-Die SiP • Elastic modulus ≤500 kPa • Prevents die cracking • Spatial encapsulant split • Hot-spot targeted TIM • CTE mismatch tolerance • Key assignees: Samsung, Intel, Aptiv Requirements derived from patent claims and academic literature in the dataset (50+ sources)
Each package type imposes distinct TIM requirements. Power modules demand sustained operation above 200°C; stacked-die SiP packages require elastic moduli at or below 500 kPa to prevent die cracking during reflow.

Samsung Electronics specifies that thermal interface materials for stacked-die heterogeneous packages must have an elastic modulus of 500 kPa or lower, positioned between stacked semiconductor packages, to prevent cracking of the lower semiconductor chip during solder ball reflow processes.

For heterogeneous stacked-die packages, Samsung Electronics’ CN patent (2019) defines a TIM layer with elastic modulus of 500 kPa or lower positioned between stacked semiconductor packages, specifically to prevent cracking of the lower semiconductor chip during solder ball reflow processes. Intel’s EP patent (2021) takes a differentiated multi-encapsulant approach for die-stacked packages, positioning a first, higher-thermal-conductivity encapsulant over the thermal hot spots and a second encapsulant that better promotes electrical connections in the bump region — a spatial optimisation that acknowledges the fundamental trade-off between thermal and electrical interface functions in 3D packages. Aptiv Technologies’ EP patent (2024) targets automotive multi-domain controllers, noting that next-generation IC chips are expected to generate significantly greater waste heat, and discloses a containment frame combined with a thermal conductance pane optimised for this environment.

Competitive Landscape: Who Holds the Key Patents

Honeywell International is the most prolific TIM patent filer in the dataset analysed for this article, with at least four active patent grants across EP and SG jurisdictions. The company’s strategy is clearly oriented toward broad coverage of the polymer-matrix TIM design space with PCM integration as a differentiation axis, spanning phase-change-enhanced bimodal filler systems, gel-type TIMs with polysiloxane matrices and adhesion promoters (EP, 2021), and compressible polymer-PCM-filler composites (EP, 2019).

Intel Corporation appears as a significant assignee in advanced package-level TIM integration, with active patents covering the optical transceiver heat extraction stack and the three-material high-thermal-conductivity encapsulant system for stacked dies. Intel’s AI-assisted floorplanning patent (CN, 2025) indicates the company is also pursuing computational thermal co-design, specifically noting that buried power rail (BPR) and backside power delivery (BSPD) architectures create new thermal management challenges by positioning the silicon substrate further from the heat spreader — a challenge that will require co-optimised TIM solutions rather than materials-only responses.

Key Finding: Emerging Entrant in Liquid Metal TIMs

Arika Incorporated (JP/CN filings, 2024–2025) represents an emerging entrant with a distinctive liquid-metal-in-PDMS TIM technology platform applicable to CPU die-to-IHS interfaces. The formulation achieves a strain limit of at least 100% and a lap shear strength of at least 1 MPa — mechanical properties tailored for high-power compute package dynamics where CTE mismatch cycling is a primary reliability driver.

Infineon Technologies (both AG and Austria AG) holds active patents on high-performance semiconductor module designs and electrically insulating, thermally conductive interface structures with engineered glass transition temperatures for power packages, establishing a strong position in the automotive and industrial power electronics segment. Henkel IP & Holding GmbH holds a notable EP patent on mixed-aspect-ratio particle dispersion TIMs with combined thermal and EMI-suppression functionality, targeting the increasingly complex electromagnetic environments of advanced RF and mixed-signal packages, consistent with standards tracked by IEEE.

Among academic contributors, the University of California Riverside (Materials Science and Engineering Program) has produced multiple high-impact papers on graphene-enhanced non-curing TIMs for both semiconductor and concentrated photovoltaic applications, with filler concentrations up to 40 wt% in mineral oil matrix demonstrated in 2019. Shanghai Jiao Tong University has contributed an influential 2022 review synthesising metal-, carbon-, and polymer-based TIM performance data and fabrication trends. Both institutions lead among academic contributors to the dataset, reflecting the broader trend of academic-industrial knowledge transfer in this sector documented by WIPO in its global innovation indices.

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References

  1. Recent Advances in Thermal Interface Materials for Thermal Management of High-Power Electronics — Shanghai Jiao Tong University, 2022
  2. High Performance Thermal Interface Materials with Low Thermal Impedance (EP) — Honeywell International Inc., 2021
  3. High Performance Thermal Interface Materials with Low Thermal Impedance (SG) — Honeywell International Inc., 2017
  4. High Performance Thermal Interface Materials with Low Thermal Impedance (SG) — Honeywell International Inc., 2021
  5. Thermal Interface Material with Mixed Aspect Ratio Particle Dispersions — Henkel IP & Holding GmbH, 2021
  6. Thermal Interface Material, Integrated Circuit Assembly and Method for Thermally Connecting Layers (JP) — Arika Incorporated, 2025
  7. Thermal Interface Material, Integrated Circuit Assembly and Method for Thermally Connecting Layers (CN) — Arika Incorporated, 2024
  8. An Anti-Leakage Liquid Metal Thermal Interface Material — China, 2020
  9. Graphene Thermal Interface Materials – State-of-the-Art and Application Prospects — University of California Riverside, 2022
  10. Non-Curing Thermal Interface Materials with Graphene Fillers for Thermal Management of Concentrated Photovoltaic Solar Cells — University of California Riverside, 2019
  11. Graphene-Based Thermal Interface Materials: An Application-Oriented Perspective on Architecture Design — Shanghai University, 2018
  12. Thermal Interface Material, Method for Thermally Coupling with Thermal Interface Material — Kaneka Corporation, 2025
  13. Thermal Interface Material, and Preparation and Application Thereof — Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 2023
  14. Thermal Interface Material Structures — International Business Machines Corporation, 2020
  15. Systems and Methods of Applying Thermal Interface Materials — Laird Technologies, Inc., 2019
  16. Heat Extraction Path from a Laser Die Using a Highly Conductive Thermal Interface Material in an Optical Transceiver — Intel Corporation, 2022
  17. Three Material High K Thermal Encapsulant System — Intel Corporation, 2021
  18. High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules, 2018
  19. A Semiconductor Device Package Comprising a Thermal Interface Material with Improved Handling Properties — Infineon Technologies Austria AG, 2025
  20. Packaging of a Semiconductor Device with Phase-Change Material for Thermal Performance — Deere & Company, 2021
  21. Thermal Interface Material Sheet and Method of Manufacturing a Thermal Interface Material Sheet — ABB Schweiz AG, 2021
  22. Thermal Interface Material Layer and Stacked Package Device Including Thermal Interface Material Layer — Samsung Electronics, 2019
  23. Thermal Interface Devices — General Electric Company, 2021
  24. Thermal Interface Materials — DDP Specialty Electronic Materials US, LLC, 2023
  25. GEL-Type Thermal Interface Material — Honeywell International Inc., 2021
  26. WIPO — World Intellectual Property Organization: Global Innovation Index
  27. IEEE — Institute of Electrical and Electronics Engineers: Advanced Packaging Standards
  28. JEDEC — Solid State Technology Association: Semiconductor Reliability Standards
  29. IEC — International Electrotechnical Commission: Power Electronics Standards

All data and statistics in this article are sourced from the references above and from PatSnap‘s proprietary innovation intelligence platform.

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