Two patent lineages: EUV plasma vs. solid-state UV
The VUV and EUV light source patent landscape divides cleanly into two principal technological lineages. The first — and by far the larger by filing volume — covers plasma-based extreme ultraviolet (EUV) sources operating at 10–15 nm for semiconductor lithography. The second, smaller but growing rapidly, covers solid-state deep-UV and VUV sources operating across 100–400 nm for disinfection, photochemistry, and photobiology.
Within the EUV plasma lineage, two sub-architectures dominate. Laser-Produced Plasma (LPP) sources use high-power CO₂ infrared laser pulses at approximately 10.6 µm to irradiate tin or xenon droplet targets, generating EUV-emitting plasma at temperatures approaching 200,000 K. Discharge-Produced Plasma (DPP) sources drive high-current electrical discharges through a source gas between electrodes — mechanically simpler, but challenged by electrode erosion and debris contamination. LPP is the dominant commercial mechanism; DPP appears primarily in earlier filings and hybrid configurations.
The solid-state lineage spans AlGaN/AlN-based LED emitters, nonlinear optical frequency-conversion devices, and dielectric-barrier discharge (DBD) excimer lamps. These architectures address sub-bands from UVA (315–400 nm) through UVB (280–315 nm), UVC (200–280 nm), and far-UVC (200–230 nm). A smaller, distinct cluster covers EUV instrumentation — spectrometer calibration, mask inspection, and pellicle evaluation — and compact synchrotron-based storage ring sources for actinic metrology.
This landscape is derived from a targeted set of 70+ patent and literature records retrieved across focused searches covering the period 1976 to 2026. It represents a snapshot of innovation signals within this dataset only and should not be interpreted as a comprehensive view of the full industry.
Approximately 55 of the 70+ retrieved patent records in the VUV/EUV light source landscape concern plasma-based EUV sources generating 13.5 nm radiation for semiconductor lithography, making this the dominant application domain by filing volume.
Filing timeline: from pulsed xenon lamps to high-NA EUV
The oldest record in this dataset — a xenon-arc pulsed UV lamp from Dentsply International Inc. filed in 1977 for dental photocuring — establishes early precedent for pulsed discharge UV sources. Dedicated EUV LPP source patents began appearing around 2004, when Gigaphoton Inc. (then affiliated with Komatsu Ltd.) filed in Germany describing xenon, tin, and lithium target delivery using charged-particle acceleration. Cymer Inc. entered the record as early as 2007 with LPP-based EUV source architectures for IC lithography.
The highest density of filings in the dataset falls between 2007 and 2015. This development cluster covers core LPP and DPP mechanisms, target tracking and feedback systems, collector mirror deterioration detection, debris mitigation, and optical alignment methods. Key assignees active in this window include Gigaphoton Inc. (multiple JP filings), Cymer/ASML (TW and JP), Komatsu Ltd. (JP), Media Lario S.R.L. (DE, JP), and the University of Central Florida Foundation (DE). In 2017, Russia’s Institute of Applied Physics (IPF RAS) filed on a gyrotron terahertz-beam-driven xenon plasma EUV source operating at 11.2 nm — a notable outlier representing an alternative plasma approach outside the mainstream commercial ecosystem.
“From 2019 onward, EUV innovation shifts from foundational plasma physics toward systems engineering: closed-loop collector mirror management, multi-beam LPP architectures, and EUV illumination optimization for high-NA exposure tools.”
From 2019 onward, the filing character changes. EUV innovation moves from foundational plasma physics toward systems engineering: collector mirror reflectance management with hydrogen etching gas (Gigaphoton, NL, 2024/2026), multi-beam LPP source architectures with dual-laser coupling devices (TRUMPF Lasersystems for Semiconductor Manufacturing GmbH, TW/KR, 2023/2026), advanced target supply systems using MEMS nozzle structures (ASML, KR, 2020), and EUV illumination system optimization for exposure tools (Samsung Electronics, KR, 2025). Simultaneously, UV-LED and far-UVC solid-state sources proliferate: 222 nm AlGaN LEDs for pathogen deactivation (Beijing Chunqiu Yusheng Technology Co., Ltd., CN, 2023), nonlinear optical far-UVC generation (Uviquity Inc., CN, 2024), and UV-B LED systems for vitamin D photobiology (Pharmalight Holding A/S, CN/JP, 2024).
The highest density of VUV and EUV patent filings in this dataset falls between 2007 and 2015, covering core LPP and DPP mechanisms, target tracking and feedback systems, collector mirror deterioration detection, debris mitigation, and optical alignment methods.
Explore the full EUV and VUV patent dataset — search by assignee, filing year, and technology cluster.
Analyse Patents with PatSnap Eureka →Assignee concentration and geographic distribution of VUV/EUV patents
EUV source IP is highly concentrated in three players. Gigaphoton Inc., ASML/Cymer, and TRUMPF Lasersystems for Semiconductor Manufacturing GmbH together control the dominant share of EUV plasma source, target delivery, and optics management patents in this dataset. Gigaphoton Inc. leads with approximately 20 records focused on LPP EUV source systems, optics, and chamber management. ASML Netherlands B.V. and Cymer Inc./Cymer LLC each account for approximately 8 records, covering EUV target delivery, conversion efficiency, supply systems, and optics cleaning. Komatsu Ltd. holds approximately 4 records, and TRUMPF approximately 3 records concentrated on dual-beam LPP EUV and beam separation.
Geographically, Japan hosts the largest number of filing records at approximately 25, dominated by Gigaphoton Inc. and Komatsu Ltd. Korea accounts for approximately 12 records spanning EUV (ASML, Samsung, TRUMPF Korea, Isol Inc., Korea Aerospace University) and UV LED applications. China contributes approximately 10 records across UV-LED, deep-UV, and EUV target supply domains. Taiwan accounts for approximately 10 records, largely ASML/Cymer and TRUMPF filings. The Netherlands has 6 records exclusively from Gigaphoton Inc., reflecting European patent office coverage of their systems. According to WIPO, patent filing geography in deep-technology sectors like EUV frequently reflects both the manufacturing base of key assignees and the jurisdiction of key customers — both patterns are visible here.
Beyond Samsung and ASML’s Korean subsidiaries, emerging Korean entities — Isol Inc., Korea Aerospace University Industry-Academic Cooperation Foundation, and Hanyang University — are filing EUV source, target delivery, and inspection patents. Korean government research institutions and university spinouts may represent acquisition or partnership targets for companies seeking to diversify EUV IP portfolios.
Solid-state UV innovation is more geographically distributed across Korea, China, Italy, Japan, and Mexico — reflecting the broader commercial opportunity and lower technical barriers compared to EUV plasma source development. Philips/Signify (Signify Holdings, Royal Philips) holds approximately 3 records focused on UV-B/UV-C LED photobiology and biofouling prevention. Media Lario S.R.L. (Italy) holds approximately 2 records covering grazing-incidence collector (GIC) mirror source-collector modules for LPP EUV. Standards bodies including IEC and ISO are actively developing safety and performance standards for UV-C and far-UVC devices, which will shape commercialisation timelines for solid-state disinfection sources.
Japan hosts the largest number of VUV and EUV patent filing records in this dataset at approximately 25, dominated by Gigaphoton Inc. and Komatsu Ltd. filings, followed by Korea with approximately 12 records and China and Taiwan each with approximately 10 records.
Application domains: from semiconductor lithography to far-UVC disinfection
Semiconductor lithography at 13.5 nm is the largest single application domain in this dataset, driving the overwhelming majority of plasma source filings. Assignees including ASML, Gigaphoton Inc., Cymer/ASML, TRUMPF, and Media Lario are active here. Recent filings from Gigaphoton Inc. (NL, 2026) address collector mirror reflectance management; ASML (TW, 2025) focuses on plasma-to-target interaction control for conversion efficiency; Samsung Electronics (KR, 2025) patents EUV illumination system configuration for exposure tool optimization. An on-axis EUV source specifically for mask inspection (Isol Inc., JP, 2026) reflects growing demand for actinic inspection tools as EUV lithography enters high-numerical-aperture volume manufacturing.
EUV metrology, mask inspection, and spectrometer calibration
Several filings target EUV characterization instrumentation. The Korea Institute of Science and Technology (US, 2015) filed on spectrometer calibration using high-order harmonic peaks. The Paul Scherrer Institute (JP, 2019) describes a compact synchrotron-based EUV source — a concentric booster/storage ring for 13.5 nm coherent EUV — for coherent scattering and diffraction-based mask inspection metrology where LPP sources may lack sufficient spatial coherence. Hanyang University (KR, 2021) addresses pellicle membrane defect inspection by cross-correlating UV and EUV illumination.
Disinfection, air purification, and public health
UV-C (200–280 nm) and far-UVC (200–230 nm) LED sources appear in multiple filings targeting hospital and HVAC air decontamination, surface sanitization, and pandemic response. Relevant entries include a UVC LED HVAC duct projection unit (UVC Science Inc., JP, 2025), a portable 222 nm handheld sanitizer (Lions World Vision Institute, MX, 2023), and a modular UV-C LED lamp for medium and large area sanitization (T.S.E. S.R.L., IT, 2024/2025). Research published via NIH has established that far-UVC at 222 nm can inactivate airborne pathogens without penetrating living human tissue, underpinning the commercial rationale for this sub-band.
Photocuring, photobiology, and industrial UV processing
UV-LED curing devices for fiber optic coatings (Draka Comteq, CN, 2012) and RF-excited UV lamp systems for industrial photocuring (Nordson Corporation, JP, 2020) represent industrial process applications. UV-B LED systems (280–315 nm) for vitamin D production and antimicrobial activity in animal facilities and healthcare buildings appear from Pharmalight Holding A/S (CN/JP, 2024) and Optcom Co., Ltd. (JP, 2021). A mercury/sulfur plasma lamp for solar UV simulation in the 290–400 nm band was filed by Korea Research Institute of Chemical Technology (GB, 2024), targeting photodegradation and UV durability testing.
Map application domains and white spaces in the VUV/EUV patent landscape with PatSnap Eureka’s AI-powered analysis tools.
Explore Patent Landscape in PatSnap Eureka →Six emerging directions shaping the 2026 VUV/EUV frontier
The most recent filings from 2023 to 2026 reveal six directional signals that define where innovation is concentrating — and where IP white space remains.
1. Dual-laser and multi-beam LPP architecture
TRUMPF’s 2026 KR filing describes two spatially offset laser beams routed through common optics to the target zone. This approach — combining pre-pulse and main-pulse in laterally separated but co-guided geometry — appears aimed at improving plasma uniformity and energy utilization at the high repetition rates needed for high-numerical-aperture EUV scanners.
2. In-situ collector mirror reflectance management
Gigaphoton’s 2026 NL filing introduces closed-loop hydrogen etching gas flow control at the mirror surface, triggered by real-time reflectance measurements. This directly addresses the fundamental lifetime-limiting failure mode of tin-contaminated multilayer mirrors in high-power EUV production environments — the most active current EUV engineering frontier by filing concentration.
3. On-axis EUV source architecture for mask inspection
Isol Inc.’s 2025–2026 filings (KR and JP) introduce a rotating disk target concept with an on-axis beam path for co-aligned illumination and EUV collection. This is a compact, lower-power EUV source specifically optimized for actinic mask and wafer inspection — distinct from the high-power scanners and addressing a growing need as advanced nodes demand defect detection at EUV wavelengths.
4. Far-UVC nonlinear optical generation (200–230 nm)
Uviquity Inc.’s 2024 CN filing represents an emerging approach: frequency doubling or sum-frequency generation in nonlinear crystals to reach far-UVC wavelengths from solid-state emitters that cannot directly access this range. This could enable compact, mercury-free, human-safe far-UVC sources for occupied-space decontamination — a commercially significant opening given mercury lamp phase-outs in multiple jurisdictions.
5. EUV illumination system architecture for advanced exposure tools
Samsung Electronics’ 2025 KR filing addresses the upstream source-to-scanner optical configuration problem — optimizing EUV point source combinations using aerial image fitness functions. This signals that system-level illumination architecture is becoming a key IP battleground as high-NA EUV tools enter volume manufacturing, with chipmakers now filing alongside traditional source suppliers.
6. Compact synchrotron EUV sources for actinic metrology
The Paul Scherrer Institute’s 2019 JP filing on a concentric booster/storage ring for 13.5 nm coherent EUV remains a forward-looking direction for mask inspection metrology. Where LPP sources may lack the spatial coherence required for advanced diffraction-based inspection, compact synchrotron sources could fill a specific technical niche as EUV lithography moves to increasingly demanding node requirements.
Far-UVC solid-state sources operating at 200–230 nm represent an emergent IP opportunity in the VUV light source landscape: the dataset shows only a handful of assignees with active filings in this sub-band — including Uviquity Inc. (nonlinear optical frequency doubling, CN, 2024) and Beijing Chunqiu Yusheng Technology Co., Ltd. (222 nm AlGaN LED, CN, 2023) — indicating relatively low IP density and accessible design space for new entrants.
Strategic implications for IP teams and R&D leaders
EUV source IP concentration creates a dense freedom-to-operate challenge for any new entrant. Gigaphoton Inc., ASML/Cymer, and TRUMPF together control the dominant share of EUV plasma source, target delivery, and optics management patents in this dataset. New entrants to EUV lithography source supply face a dense thicket of IP in LPP architecture, debris management, collector mirror protection, and dose control. Freedom-to-operate analysis is essential before any commercial EUV source development program.
Collector mirror lifetime and in-situ cleaning represent the most active current EUV engineering frontier. The concentration of 2022–2026 filings around hydrogen etching, reflectance monitoring, and optics cleaning from Gigaphoton (NL), ASML (KR), and Cymer (TW) indicates this is both a technical bottleneck and a white space for differentiated IP. R&D teams focused on EUV uptime optimization should prioritize this area as a filing opportunity.
“Far-UVC (200–230 nm) solid-state sources are an emergent IP opportunity: mercury lamp phase-outs in multiple jurisdictions create urgent market pull, and this dataset shows only a handful of assignees with active filings — indicating relatively low IP density and accessible design space for new entrants.”
VUV excimer lamp innovation below 190 nm remains niche but strategically relevant. Only one dedicated VUV excimer lamp filing — Xylem Europe LLC’s 2021 CN record covering a dielectric-barrier discharge xenon excimer source with sub-0.5 mm inner electrode wire for improved wall-plug efficiency — appears in this dataset. This sub-10 torr, sub-190 nm regime is underserved by solid-state sources and represents a specialized but defensible IP space for companies serving semiconductor surface cleaning, photochemical synthesis, and water treatment markets. Patent offices including the EPO and USPTO classify these sources under IPC subclasses H01J and H01S, providing structured search entry points for landscape analysis.
- EUV source IP thicket: Freedom-to-operate analysis is essential before any commercial EUV source development program given the concentration in Gigaphoton, ASML/Cymer, and TRUMPF.
- Collector mirror IP as an active frontier: Hydrogen etching, reflectance monitoring, and optics cleaning are both a technical bottleneck and a filing opportunity for differentiated IP.
- Far-UVC as an open IP space: Low assignee density combined with urgent market pull from mercury lamp phase-outs makes 200–230 nm solid-state sources the most accessible entry point in the dataset.
- Korea as an emerging EUV hub: Isol Inc., Korea Aerospace University, and Hanyang University represent potential acquisition or partnership targets for companies seeking to diversify EUV IP portfolios beyond the three dominant players.
- VUV excimer lamp niche: The sub-190 nm DBD excimer space is underserved by solid-state sources and defensible for companies in semiconductor surface cleaning, photochemical synthesis, and water treatment.