Lam Research v. Inpria: Voluntary Dismissal in EUV Photoresist Patent Dispute

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📋 Case Summary

Case Name Lam Research Corp. v. Inpria Corp.
Case Number 25-1872 (Fed. Cir.)
Court Federal Circuit, Appeal from N/A (Invalidity/Cancellation Action)
Duration June 2025 – Sep 2025 91 days
Outcome Voluntary Dismissal – Each side bears own costs
Patents at Issue
Accused Products EUV photoresist patterning technology

Case Overview

The Parties

⚖️ Plaintiff

Global semiconductor equipment leader with a dominant presence in etch, deposition, and increasingly, advanced photoresist delivery systems.

🛡️ Defendant

Corvallis, Oregon-based materials company specializing in metal-oxide photoresists engineered specifically for EUV lithography.

Patents at Issue

This case centered on **US Patent No. 9,823,564 B2** (Application No. US14/858612), which claims inventions directed to patterned inorganic layers, radiation-based patterning compositions, and corresponding methods. This patent covers material compositions and patterning methodologies directly relevant to EUV photolithography, a critical manufacturing step in cutting-edge chips.

  • US 9,823,564 B2 — Patterned inorganic layers and radiation-based patterning compositions.
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The Verdict & Legal Analysis

Outcome

The Federal Circuit dismissed Case No. 25-1872 pursuant to **Fed. R. App. P. 42(b)** — a voluntary dismissal mechanism — on September 17, 2025. No damages were awarded by the court. No injunctive relief was granted or denied on the merits. Each party was ordered to bear its own costs, a standard provision in consensual dismissals that signals neither side extracted a fee-shifting concession.

Because the dismissal is voluntary and the underlying patentability dispute was not adjudicated on the merits, **no binding Federal Circuit precedent was established** in this proceeding.

Key Legal Issues

The case was designated as an **Invalidity/Cancellation Action**, placing the core legal dispute squarely on whether US9823564B2 constitutes valid, enforceable IP. Patent validity challenges at the Federal Circuit typically arise after a PTAB decision in IPR or post-grant review (PGR) proceedings.

Without a merits ruling, the precise arguments that drove the appeal — and ultimately the settlement — remain confidential. However, the involvement of both Morgan Lewis and Paul Hastings, firms with deep PTAB and Federal Circuit experience, suggests the validity arguments were substantively developed before the dismissal occurred.

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⚠️ Freedom to Operate (FTO) Analysis

This case highlights critical IP risks in EUV photoresist technology. Choose your next step:

📋 Understand This Case’s Impact

Learn about the specific risks and implications from this litigation.

  • View related EUV photoresist patents
  • See which companies are most active in metal-oxide resists
  • Understand claim scope of US9823564B2
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⚠️
High Risk Area

EUV photoresist patterning compositions

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US9823564B2

Remains valid & enforceable

Design-Around Options

Possible with strategic R&D

✅ Key Takeaways

For Patent Attorneys

Voluntary dismissal under Fed. R. App. P. 42(b) preserved the patent’s validity presumption for US9823564B2.

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Federal Circuit invalidity appeals can serve as powerful settlement leverage, even without a final ruling.

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For R&D Teams

EUV photoresist IP is a high-litigation-risk technology area; early FTO clearance on radiation-based patterning compositions is essential.

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Design-around strategies should account for claim scope in radiation-based patterning compositions and inorganic layer formation methods.

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⚖️ Disclaimer: This article is for informational purposes only and does not constitute legal advice. The analysis presented reflects publicly available case information and general legal principles. For specific advice regarding patent litigation, FTO analysis, or IP strategy, please consult a qualified patent attorney.