The dataset identifies four families: (1) scanning-probe and electron-beam direct-write methods using focused electron beams or STM tips; (2) focused ion beam (FIB) implantation and deposition using nitrogen, silicon, argon, or other ions at sub-100 nm resolution; (3) atomic-layer and surface-chemistry-mediated doping, typified by the APAM process using hydrogen-resist surface chemistry on silicon with phosphine exposure; and (4) EUV-plasma synergistic surface processing, an emerging hybrid approach using extreme ultraviolet photon activation combined with plasma chemistry.

The 2017 paper on scalable FIB creation of single quantum emitters in diamond nanostructures reports approximately 32 nm lateral precision and less than 50 nm positioning accuracy relative to nanocavities for Si+ implantation creating SiV centers. This compares to approximately 100 nm precision reported in the 2013 maskless FIB paper for nitrogen implantation, showing progressive improvement over the period.

The Atomic Precision Advanced Manufacturing (APAM) process uses hydrogen-terminated silicon surfaces patterned by scanning tunneling microscope tips, followed by phosphine gas exposure, to place phosphorus donors at specific lattice sites. The 2020 APAM review identifies the central commercialization challenge as interfacing APAM-fabricated structures with conventional CMOS at the die level — specifically back-end-of-line compatibility and electrical contact formation to atomically placed donor arrays.

Tianjin University’s 2023 filings describe three operational modes: EUV replacing conventional chemical adsorption for surface activation, EUV replacing plasma bombardment for material removal to avoid impurity introduction, and an EUV enhancement/excitation step. Unlike FIB or e-beam methods, this approach uses photochemical surface activation rather than mechanical beam-based manipulation, and is described as potentially avoiding beam damage, contamination risks, and throughput limitations of ion-based methods.

Within this dataset: UT-Battelle, LLC holds one active US patent (2022) and one pending US application (2025); Tianjin University holds one active US patent (2023) and one pending EP application (2023); Hitachi High-Tech Analysis Corporation holds two active US patents (2020, 2021); and Taiwan Semiconductor Manufacturing Co. holds one active US patent. Mattson Thermal Products GmbH holds two inactive patents (DE and AU, both 2004).

Recoil implantation, demonstrated in a 2020 paper, uses FIB momentum transfer from pre-deposited thin films to introduce group IV dopants into a host material without direct ion implantation. It is substrate-agnostic — demonstrated in both diamond and optical fiber cores — and achieves sub-50 nm positional accuracy with ultra-shallow dopant profiles of less than 5 nm depth. This addresses a key limitation of conventional implantation (straggle depth) for surface-sensitive quantum devices where shallow placement is critical.