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Cryogenic Etching Patents: Leaders, Trends & White Space 2026

Cryogenic Etching Patents: Leaders, Trends & White Space 2026
https://www.patsnap.com/resources/blog/rd-blog/cryogenic-etching-for-deep-structures-patent-landscape/ · Patsnap · data cut-off 2026-07-31 · downloaded from the live page
Patent Landscape · Etch Processes
Cryogenic Etching for Deep Structures: Patents, Leaders and Open Claim Space
  • 36.3% concentration at the top. The five leading assignees together hold 1,191 of the 3,280 records in scope — a dense core surrounded by a long tail of single- and few-filing entrants.
  • Filing cooled from its 2021 pace. Volume moved from 77 records in 2021 to 65 in 2024, a 16% pullback over that span, even as 2025 posted the highest single-year count (160) in the dataset so far.
  • H01L dominates, but B41J is not noise. 46.8% of records sit in semiconductor devices (H01L), yet 26.5% carry a printer/typewriter code (B41J) — a legacy of inkjet printhead fabrication using the same deep-etch toolset.
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3,280
Published Records
36%
Top-5 Share of All Records
-16%
Filing Growth 2021→2024
US
Leading Jurisdiction

Filing growth compares 2021 (77 records) with 2024 (65) — a three-year span. 2024 is the most recent year we treat as complete: publication lags filing by roughly 18 months, so 2025 onwards are still filling in and any growth rate that ends there would understate the field. Top-5 share is the combined record count of the five largest assignees divided by all 3,280 records in scope (CR5), not by the ranked leaders only.

Published byPatsnap Research··7 min readSourced from Patsnap Eureka
Overview

What this landscape covers

Cryogenic etching lowers substrate temperature during plasma etching to slow sidewall erosion and sharpen the profile of deep, high-aspect-ratio features. The technique competes with room-temperature Bosch-process cycling for the same jobs: through-silicon vias, MEMS trenches, and — as this dataset shows — inkjet printhead nozzles. The 3,280 records in scope span 2015 through mid-2026 and were pulled using claim and description language around scallop formation, passivation layers, notching at the substrate interface, mask erosion and etch-rate scaling — the specific failure modes that separate a working cryogenic process from one that just runs cold.

Filings route overwhelmingly through the United States (2,189 records), with Europe, WIPO/PCT and Germany making up most of the remainder. That skew matters for freedom-to-operate work: a clearance search that stops at the USPTO will miss the EPO and DE filings sitting behind roughly a tenth of the corpus.

Filing volume and IPC composition, 2017–2026
  1. 1MEMJET TECH LTD453
  2. 2ZAMTEC228
  3. 3SEMICON COMPONENTS IND LLC214
  4. 4SILVERBROOK RESEARCH PTY LTD169
  5. 5INFINEON TECHNOLOGIES AG127
  6. 6SILVEBROOK KIA110
  7. 7APPLIED MATERIALS INC102
  8. 8LAM RES CORP80
  9. 9KONINKLIJKE PHILIPS NV56
  10. 10TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD54
Source: Patsnap Eureka. Assignee ranking and totals. Derived from a Patsnap search on Cryogenic Etching for Deep Structures covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP

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The Data

Filing trend and technology composition

Two views of the same 3,280 records: how filing volume has moved year over year, and which IPC subclasses carry the claim density.

Filing trend, 2017-2026

Volume ran from 112 records in 2017 to a peak of 160 in 2025. The 2021-to-2024 window shows a 16% decline (77 to 65), but 2025 and 2026 figures are still incomplete under the ~18-month publication lag, so a slowdown reading should stop at 2024.

Filing trend, 2017-202605010015020011220172018201920202021202220232024160202562026Most recent year is partial — publication lag means later filings are not yet visible.

IPC subclass composition

H01L (semiconductor devices) covers 46.8% of records and B41J (printers) covers 26.5% — together they account for most filings, with H10P, H10W, H10D, G06F, G11B and B81C forming a secondary tier. Because records carry multiple codes, these shares sum past 100% and should be read against the 3,280-record total, not against each other.

IPC subclass compositionH01L · Semiconductor devices1,53646.8%B41J · Typewriters & printers86826.5%H10P40512.3%H10W32810.0%H10D · Semiconductor devices (general)2276.9%G06F · Electric digital data processi…1955.9%G11B · Information storage (magnetic/…1785.4%B81C · MEMS manufacturing1624.9%Other2,83886.5%

Shares are the percentage of the 3,280 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.

Source: Patsnap Eureka. Filing trend and technology composition. Derived from a Patsnap search on Cryogenic Etching for Deep Structures covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.

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Key Patents

Representative filing and most-cited prior art

Representative Filing
US20230230840A12023-07-20

US20230230840A1 — Process gas for cryogenic etching, plasma etching apparatus, and fabrication method

SAMSUNG ELECTRONICS CO., LTD.

A method of fabricating a semiconductor device comprises forming a mold layer on a substrate, forming a hardmask layer on the mold layer such that a portion of the mold layer is exposed, and using the hardmask layer to perform on the mold layer a cryogenic etching process. The cryogenic etching process includes supplying a chamber with a process gas including first and second process gases, and generating a plasma from the process gas. Radicals of the first process gas etch the exposed portion of the mold layer, producing an ammonium salt; the second process gas includes an R-OH compound where R is hydrogen or a C1 to C5 alkyl group.Filed by Samsung Electronics, published 2023-07-20. The claim scope centres on the process-gas chemistry — specifically the R-OH second gas and its role in salt byproduct control — rather than on chamber hardware.

US20230230840A1 — patent drawing 1US20230230840A1 — patent drawing 2
View full record
Most-cited records in this corpus
#Publication no.Patent titleCitations
1US7972875B2Optical systems fabricated by printing-based assembly623
2US20110140172A1Reverse side engineered iii-nitride devices546
3US20130025786A1Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes486
4US6652082B2Printhead assembly for an ink jet printer436
5US20130118895A1Apparatus and method for reactive ion etching416
6US8722458B2Optical systems fabricated by printing-based assembly411
7WO2000023279A1Improvements relating to inkjet printers358
8WO2012100099A2Slippery surfaces with high pressure stability, optical transparency, and self-healing characteristics334
9US6273544B1Inkjet printhead having a self aligned nozzle333
10US20140373898A1Optical systems fabricated by printing-based assembly314

Citation counts favour older filings simply because they have had longer to accumulate citations inside a searched corpus — read them as a signal of influence on subsequent filers, not as a ranking of current technical importance.

Each row carries its publication number; clicking a row searches Eureka by that number.

Source: Patsnap Eureka. Citation counts and representative records. Derived from a Patsnap search on Cryogenic Etching for Deep Structures covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
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Insights

What the numbers say about the field

Three read-throughs from the concentration, trend and composition figures above.

Concentration
36.3%
of all 3,280 records held by the top 5

A dense core, then a long tail

The leading assignee alone holds 453 records; the fifth-ranked holds 127. That drop-off, combined with a top-10 share of 48.6%, points to a field where a handful of players occupy the core process-chemistry claims while the remaining ranked entrants file narrowly around specific tool or gas-chemistry variants.

Based on the 100-company ranked list.
Momentum
-16%
change in filings, 2021 to 2024

Volume eased from its 2021 high, not from 2025's spike

Filings dropped from 77 in 2021 to 65 in 2024. 2025's count of 160 looks like a rebound, but recent years are still filling in under the ~18-month publication lag, so that number will likely settle rather than stay a clean high-water mark.

2024 is the most recent complete year in this dataset.
Composition
26.5%
of records carry a B41J printer code

Printhead fabrication shares the toolset

A quarter of the corpus sits in B41J alongside the semiconductor-heavy H01L class. Deep silicon etch for inkjet nozzle structures uses much of the same cryogenic and Bosch-process chemistry as through-silicon-via work, so prior art searches confined to semiconductor classes will miss a real slice of relevant claims.

Class shares sum past 100% because records carry multiple IPC codes.
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Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to cryogenic etching for deep structures, with the prior art for and against each one.

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Source: Patsnap Eureka. Co-assignee relationships and derived observations. Derived from a Patsnap search on Cryogenic Etching for Deep Structures covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
Players

Who holds the claim space, and where it thins out

The ranked list runs 100 companies deep. A small group of tool makers and device manufacturers hold the bulk of the volume; most of the rest of the ranking files in single digits.

Leader
453
records

The top-ranked assignee

The leading assignee's 453 records is more than triple the fifth-place count of 127, marking a clear gap between the single largest filer and the rest of the concentrated group.

Leader of the 100-company ranking.
Recent momentum
0 in latest year
across several formerly active filers

Multiple established filers went quiet

Several of the historically largest assignees — spanning printhead, semiconductor-device and IDM names — show zero filings in the most recent year, with a number posting -100% year-on-year. That is consistent with the broader 2021-to-2024 pullback rather than a single company's exit.

Momentum figures reflect the latest tracked year, still subject to publication lag.
Co-filing
51
shared records, strongest pair

Inventor-level collaboration is concentrated

Only 10 co-assignee pairs appear in the dataset, and the strongest of them — linked through a common corporate inventor group — shares 51 records. Co-filing is the exception here, not the norm; most records list a single assignee.

10 co-assignee pairs identified in total.
🔍
Under-claimed sub-areas
Branches with comparatively thin coverage relative to the core H01L/B41J claim space
substrate temperature ramp controlnotching mitigation at buried interfacesmask erosion compensation algorithmsscallop-profile smoothing chemistriesetch-rate scaling for sub-10nm trenches
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Recent-year filing momentum
AssigneeRecent yearYoY
Silverbrook Research Pty Ltd0
Semiconductor Components Industries, LLC0-100%
SILVEBROOK KIA0-100%
Infineon Technologies AG0-100%
International Business Machines Corporation (IBM)0-100%
Koninklijke Philips N.V.0
Lam Research Corporation0-100%
Applied Materials, Inc.0
Source: Patsnap Eureka. Assignee-level momentum. Derived from a Patsnap search on Cryogenic Etching for Deep Structures covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
What's Next

Where to take this analysis

The figures above establish where the field sits today. Two directions extend the analysis for a specific filing or freedom-to-operate decision.

Map the white space claim by claim

The under-claimed sub-areas identified here — temperature ramp control, notching mitigation, mask erosion compensation — need claim-level review against the leader's active filings before a new application can rely on them being open.

Explore white space in Eureka

Track the leader's continuation activity

With one assignee holding 453 records and several major filers dropping to zero in the latest tracked year, the next filing wave is likely to come from a narrower set of active players rather than the historical field.

Monitor assignee activity in Eureka
Source: Patsnap Eureka. Forward-looking reading of the same dataset. Derived from a Patsnap search on Cryogenic Etching for Deep Structures covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
FAQ

Common questions on cryogenic etching patents

Answers are grounded in the same dataset. Derived from a Patsnap search on Cryogenic Etching for Deep Structures covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP

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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.

Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.

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