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FinFET CMP Patent Landscape in 2026

FinFET CMP Patent Landscape in 2026
Competitive Landscape
FinFET CMP Patent Landscape in 2026

FinFET chemical-mechanical planarization IP is highly concentrated, with Taiwan Semiconductor Manufacturing Co. (TSMC) holding the dominant position among the top filers. The field peaked in 2017 and annual volume has eased significantly since, signalling a maturing technology where differentiated process know-how and adjacent materials innovations are the remaining vectors for new IP.

291
Patent families in scope
81%
Top-5 share of top-100 filers
-59%
3-yr filing growth (lag-adj.)
United States
Leading jurisdiction
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Published byPatSnap Insights Team··6 min readVerified by PatSnap Eureka data
Overview

TSMC leads a tightly concentrated field of semiconductor device makers

Taiwan Semiconductor Manufacturing Co. (TSMC) ranks first among the hundred largest filers, followed by GlobalFoundries US Inc. and International Business Machines Corporation. The top five filers together account for 81% of the combined patent records of the hundred largest filers, indicating a field where a small cluster of integrated device manufacturers and foundries have secured the bulk of documented process IP.

The gap between the first-ranked applicant and the rest of the field is substantial. TSMC’s record count is roughly three times that of the next closest rival, creating a two-tier structure: a dominant leader, a small group of established challengers (GlobalFoundries, IBM), and a long tail of smaller participants.

Leading applicants
#ApplicantPatent recordsShare
1Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)227
2GlobalFoundries US Inc.76
3International Business Machines Corporation (IBM)75
4GlobalFoundries Inc.49
5Adeia Semiconductor Solutions LLC27
6Semiconductor Manufacturing International (Shanghai) Corporation (SMIC Shanghai)15
7Elpis Tech Inc.14
8Alsephina Innovations Inc.14
9Semiconductor Manufacturing International (Beijing) Corporation (SMIC Beijing)12
10Advanced Micro Devices, Inc. (AMD)5
#ApplicantPatent recordsShare
11United Microelectronics Corporation (UMC)4
12Bell Semiconductor LLC4
13Qualcomm Incorporated4
14STMicroelectronics International N.V.4
15Ahmed Shibly S.3
16Applied Materials, Inc.3
17Peking University3
18Institute of Microelectronics, Chinese Academy of Sciences2
19Cirrus Logic International Semiconductor Ltd.2
20Anji Microelectronics Technology (Shanghai) Co., Ltd.2
↗ Hover a row · click a company to ask Eureka

This concentration reflects the capital-intensive nature of FinFET node development: only firms with full-node manufacturing programs generated the volume of process-integration patents needed to compete for top position. New entrants without an existing FinFET process platform face a significant prior-art base.

Patents filed in the most recent 18–24 months are likely under-counted due to publication lag; the apparent absence of 2026 records and low 2025 count should not be read as a cessation of activity. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.

Source: PatSnap Eureka. Chart shows the top applicants ranked by patent records; the corpus total is measured in patent families. These figures use different units and should not be compared directly.Explore deeper in Eureka →
Trends & Structure

Filing volume peaked in 2017 and has eased; semiconductor device classes dominate the mix

Annual filing trend and technology composition together reveal a field that established its core IP base in the 2017–2019 window and has since transitioned toward lower-volume, more targeted filings. The IPC mix confirms that FinFET CMP IP is overwhelmingly classified under semiconductor device classes, with only sparse coverage in adjacent materials and process-equipment branches.

Annual filing trend

Filings peaked at 72 records in 2017 and declined steadily through the subsequent years. The 2025 and 2026 counts are almost certainly under-reported due to patent publication lag and should not be interpreted as a further structural drop; the meaningful trend is the persistent easing from the 2017 high across 2018–2024.

Annual filing trendAnnual values from 2017 to 2026, peaking at 72 in 2017.7220176220184520193920202420211820221320231320245202502026↗ Hover for values · click a bar to ask Eureka

Technology composition

H01L (Semiconductor devices) and H10D (Semiconductor devices, general) account for the overwhelming share of classified records, reflecting that FinFET CMP innovations are filed primarily as device-integration inventions. Polishing compositions (C09G), memory device manufacture (H10B), and grinding and polishing machinery (B24B) each represent a small fraction, pointing to under-served process-materials and equipment branches.

Technology compositionH01L · Semiconductor devices leads with 525; H10D · Semiconductor devices (general) 213.H01L · Semiconductor dev…525H10D · Semiconductor dev…213H10P59H10B · Memory device man…31C09G · Polishing composi…22H10W9H10N · Other electric so…7C09K · Materials for mis…5↗ Hover for values · click a bar to ask Eureka
Source: PatSnap Eureka. Technology-branch counts are measured in patent records; a single patent family can carry several IPC classes, so class totals can exceed the family total in scope.Explore deeper in Eureka →
Key Patents

Highly cited patent families surfaced by the query

Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.

Featured patent
GB2497490APublished 2013-06-12

Chemical mechanical planarization processes for fa…

Jsr Corporation

A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying… (excerpt from the patent abstract)

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Highly cited patent families surfaced by this query
#PatentCitations
1GCIB etching method for adjusting fin height of fi…473
2Double spacer FinFET formation281
3Methods of forming single and double diffusion bre…160
4Semiconductor device and manufacturing method ther…120
5Finfet with post-RMG gate cut107
6Fin field effect transistor (finfet) device struct…87
7Methods of forming diffusion breaks on integrated …84
8Multi-step chemical mechanical polishing of a gate…72

Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.

Source: PatSnap Eureka. Citation-ranked patent families surfaced by this query.Open in Eureka →
Insights

What the patent structure means for R&D investment decisions

Four structural dimensions — lifecycle stage, applicant concentration, collaboration patterns, and geographic distribution — each carry distinct implications for teams evaluating where to position new FinFET CMP research or IP filings.

Decline

Field is in decline from a 2017 peak

The lifecycle stage is Decline, with annual filings easing back from the 2017 peak of 72 records. This implies that core FinFET CMP process steps are now well-documented in prior art, reducing the likelihood of broad blocking patents in the mainstream device-integration space. R&D investment is better directed toward differentiated sub-topics — advanced slurry formulations, gate-cut CMP, or next-node compatibility — rather than replicating the established core.

Lifecycle: Decline
Concentration

Top five filers hold 81% of the top-100 share

The top five applicants — TSMC, GlobalFoundries US, IBM, GlobalFoundries Inc., and Adeia Semiconductor Solutions — collectively represent 81% of the combined patent records among the hundred largest filers. This level of concentration means that licensing negotiations, freedom-to-operate analyses, and any new process development must account for a relatively small set of dominant portfolios. Challengers below this tier have limited leverage unless they target adjacent or under-served branches.

High concentration
Collaboration

IBM–GlobalFoundries alliance produced the most co-filed work

International Business Machines Corporation and GlobalFoundries produced 18 co-filed patents, the most active co-applicant pair in the corpus. SMIC Shanghai and SMIC Beijing collaborated on 12 patents, reflecting a coordinated domestic Chinese FinFET development program. Smaller collaboration links exist between IBM and JSR Corporation (2 patents) and between GlobalFoundries entities and STMicroelectronics (1 patent). These partnerships suggest that process-equipment suppliers and chemical companies that have not yet entered formal co-development agreements represent an open collaboration channel.

Alliance-driven
Geography

US dominates; Taiwan and China are distant secondary filings jurisdictions

The United States leads as the primary filing jurisdiction by a wide margin, followed by Taiwan and China at substantially lower volumes. The United Kingdom, Germany, Japan, and South Korea each account for a small number of records, and WIPO PCT and Singapore round out the picture. The US-centric filing strategy reflects both the location of the leading applicants’ legal teams and the importance of the US market for semiconductor litigation and licensing. Teams seeking to build offensive or defensive positions outside the US will find thinner prior-art density in most other jurisdictions.

US-centric
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Top collaboration links
ApplicantCollaboratorCo-filings
International Business Machines Corporation (IBM)GlobalFoundries Inc.18
Semiconductor Manufacturing International (Shanghai) Corporation (SMIC Shanghai)Semiconductor Manufacturing International (Beijing) Corporation (SMIC Beijing)12
International Business Machines Corporation (IBM)JSR Corporation2
GlobalFoundries Inc.GlobalFoundries US Inc.2
GlobalFoundries Inc.STMicroelectronics Inc.1
United Microelectronics Corporation (UMC)Fujian Jinhua Integrated Circuit Co., Ltd.1

Co-filing pairs, ranked by the number of jointly-filed patent families.

Source: PatSnap Eureka. Insights derived from applicant ranking, collaboration pairs, jurisdiction distribution, and lifecycle classification in the evidence set.Explore insights →
Leaders

TSMC leads outright; IBM and GlobalFoundries are closely matched challengers

Two tiers are visible in the applicant ranking: TSMC as a clear leader, and a cluster of established semiconductor manufacturers and IP holding entities that have built substantial but smaller portfolios, often through collaboration with each other.

Leader · TSMC

Taiwan Semiconductor Manufacturing Co.

TSMC leads with 227 patent records, concentrating its filings across H01L 21 (process integration), H01L 29 (device structure), and H01L 27 (integrated circuits). Its recent-period filings show a decline of 55% versus the prior comparable window, consistent with the field-wide maturation trend rather than a strategic withdrawal. The portfolio’s breadth across device structure and process-integration classes reflects TSMC’s position as the primary node developer for advanced FinFET processes.

families: 227
Challenger · IBM

International Business Machines Corporation

IBM ranks third overall with 75 patent records, covering H01L 21, H01L 29, and H01L 27 — the same primary classes as TSMC, indicating direct technical overlap. IBM’s most notable structural feature is its 18-patent co-filing relationship with GlobalFoundries, the densest collaboration pair in the dataset, reflecting the historical IBM-GlobalFoundries joint process development program. Its portfolio represents a significant freedom-to-operate consideration for any team working on gate-last or CMP-integrated FinFET flows.

families: 75
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GlobalFoundries US Inc.Adeia Semiconductor Solutions LLC+ more
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Leading-applicant momentum (recent 3 yrs, lag-adjusted)
ApplicantRecent (3 yrs)Trend
Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)40▼ -55%
Source: PatSnap Eureka. Player cards reflect applicant ranking, technology focus classes, and recent filing momentum from the evidence set.Explore players →
Adjacent Branches

Under-served branches in polishing chemistry, memory CMP, and solid-state devices

Several IPC branches adjacent to the dominant H01L semiconductor device classes carry relatively low patent counts in this corpus, pointing to areas where the existing FinFET CMP literature is thin. These observations reflect relative sparsity and plausible technical relevance; they are not validated commercial opportunities without further freedom-to-operate and market analysis.

C09G · Polishing Compositions

With only 22 records in this corpus, polishing compositions represent the most technically direct adjacent branch with the lightest coverage. Slurry chemistry is critical to FinFET CMP yield and selectivity, yet the IP density here is low relative to the device-integration classes. Teams with chemistry or materials expertise — particularly equipment suppliers and specialty chemical firms — face a thinner prior-art base in this branch and could differentiate through slurry formulations tailored to gate-metal or fin-isolation CMP steps. Entry would require alignment with leading foundries that control the process integration knowledge.

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H10B · Memory Device Manufacture

H10B covers memory device fabrication and accounts for 31 records in this corpus, making it the second-most-active adjacent branch after H10D. The intersection of FinFET process flows with embedded memory (eSRAM, embedded DRAM) represents a practical integration challenge, and the relatively sparse patent density in H10B within this topic suggests that memory-specific CMP steps — planarization of memory-cell stacks in FinFET-based SoCs — have not yet been extensively claimed. R&D teams working on logic-memory co-integration could find space here, particularly for planarization steps specific to FinFET-compatible memory bit-cell architectures.

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H10W · Wide-bandgap devicesH10N · Other electric solid-state devices+ more
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Source: PatSnap Eureka. Adjacent branch observations are based on relative record counts within the IPC composition of the FinFET CMP corpus.Explore emerging →
Route Matrix

How leading applicants differ across technology sub-routes

Route coverage across the main technology branches in the current evidence set.

PlayerH01L 21 · Semiconductor devicesH01L 29 · Semiconductor devicesH01L 27 · Semiconductor devicesH10D 84 · Semiconductor devices (general)H10D 62 · Semiconductor devices (general)
Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)Strong · 227Strong · 182Moderate · 101Moderate · 83Moderate · 85
International Business Machines Corporation (IBM)Strong · 120Strong · 112Strong · 90Moderate · 56Moderate · 46
GlobalFoundries Inc.Strong · 103Strong · 84Moderate · 49Moderate · 41Emerging · 19
Advanced Micro Devices, Inc. (AMD)Strong · 32Strong · 32AbsentAbsentAbsent
STMicroelectronics Inc.Strong · 10Strong · 8Strong · 9Strong · 9Strong · 9
Semiconductor Manufacturing International (Shanghai) Corporation (SMIC Shanghai)Strong · 15Strong · 15Strong · 9AbsentAbsent
Semiconductor Manufacturing International (Beijing) Corporation (SMIC Beijing)Strong · 12Strong · 12Strong · 9AbsentAbsent
Source: PatSnap Eureka. Matrix values are measured in patent records and should not be compared directly with family-level applicant totals.Compare in Eureka →
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Disclaimer. This page is generated from PatSnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

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