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FinFET Interconnect Material Substitution Patent Landscape

FinFET Interconnect Material Substitution Patent Landscape
Competitive Landscape
FinFET Interconnect Material Substitution Patent Landscape in 2026

This field is heavily concentrated: Taiwan Semiconductor Manufacturing Co. (TSMC) alone accounts for the largest single share of ranked applicants, and the top five filers together hold 89% of the hundred largest filers’ combined patent records. Annual filing volume peaked in 2019 and has since eased significantly, signaling a maturing, post-peak innovation cycle in core FinFET interconnect material substitution.

597
Patent families in scope
89%
Top-5 share of top-100 filers
-55%
3-yr filing growth (lag-adj.)
United States
Leading jurisdiction
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Published byPatsnap Insights Team··6 min readVerified by Patsnap Eureka data
Overview

TSMC leads a highly consolidated field with a wide gap to challengers

Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) ranks first with 435 patent records, more than double the nearest rival, IBM, which holds 194 patent records. Intel Corp follows in third with 107 patent records, and Globalfoundries US Inc places fourth with 57 patent records.

The top five filers collectively represent 89% of the hundred largest filers’ combined total, indicating an unusually tight oligopoly. The gap between TSMC and IBM is large enough that no single challenger, acting alone, could close it within a typical multi-year R&D horizon without a strategic acquisition or licensing shift.

Leading applicants
#ApplicantPatent recordsShare
1Taiwan Semiconductor Manufacturing Co. Ltd.435
2International Business Machines Corporation194
3Intel Corporation107
4Globalfoundries US Inc.57
5Adeia Semiconductor Solutions LLC29
6Samsung Electronics Co. Ltd.23
7Applied Materials Inc.11
8Elpis Tech Inc.9
9Avago Technologies International Sales Pte. Ltd.6
10Sony Semiconductor Solutions Corporation6
#ApplicantPatent recordsShare
11United Microelectronics Corporation3
12Qualcomm Inc.3
13Semiwise2
14Mago Barca IP LLC2
15Semi Solutions LLC2
16Micron Technology Inc.2
17MediaTek Inc.2
18IBM United Kingdom Ltd.2
19Murthy Anand S.2
20Wollochet Solutions LLC2
↗ Hover a row · click a company to ask Eureka

TSMC’s dominant position reflects its role as the leading high-volume manufacturer of advanced FinFET nodes; its patent posture here is primarily defensive and process-enabling. IBM and Intel, as the second and third-ranked filers, have historically contributed foundational architecture and materials-science IP, which explains their disproportionate presence in highly-cited references.

The most recent 18–24 months of filings are likely under-counted due to patent publication lag; figures for 20242025 should be treated as provisional minimums. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.

Source: Patsnap Eureka. Chart shows the top applicants ranked by patent records; the corpus total is measured in patent families. These figures use different units and should not be compared directly. This same dataset is now available on Patsnap Open Platform via MCP.Connect via MCP →
Trends & Structure

Filing activity peaked in 2019 and has contracted; semiconductor device classes dominate the technology mix

The annual filing trend and technology composition together reveal a field that moved through rapid growth between 2017 and 2019, then contracted sharply, while remaining almost entirely anchored in core semiconductor device classes.

Annual filing trend

Filings rose from 88 in 2017 to a peak of 132 in 2019, then fell to 67 in both 2020 and 2021, and continued declining to 49 in 2022, 47 in 2023, and 23 in 2024. The 2024–2025 counts are provisional due to publication lag and should not be read as the final level of activity for those years.

Annual filing trendAnnual values from 2017 to 2026, peaking at 132 in 2019.882017122201813220196720206720214920224720232320242202502026↗ Hover for values · click a bar to ask Eureka

Technology composition

H01L (Semiconductor devices) accounts for the largest share of classified patent records by a wide margin, followed by H10D (Semiconductor devices, general) and H10P. Lower-share branches including H10W, H10B (Memory device manufacture), H10N, and G11C (Static and digital memories) represent adjacent areas where coverage is comparatively sparse.

Technology compositionH01L · Semiconductor devices leads with 897; H10D · Semiconductor devices (general) 430.H01L · Semiconductor dev…897H10D · Semiconductor dev…430H10P106H10W50H10B · Memory device man…48H10N · Other electric so…15G11C · Static & digital …8H03H · Impedance network…8↗ Hover for values · click a bar to ask Eureka
Source: Patsnap Eureka. Technology-branch counts are measured in patent records; a single patent family can carry several IPC classes, so class totals can exceed the family total in scope.Explore deeper in Eureka →
Key Patents

Highly cited patent families surfaced by the query

Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.

Featured patent
US9721970B2Published 2017-08-01

Gate all-around FinFET device and a method of manu…

International Business Machines Corporation

A method for manufacturing a fin field-effect transistor (FinFET) device, comprises patterning a first layer on a substrate to form at least one fin, patterning a second layer under the first layer to remove a portion of the second layer on sides of the at least one fin, forming a sacrificial gate electrode on the at least one fin, and a spacer on the… (excerpt from the patent abstract)

Gate all-around FinFET device and a method of manu… — patent drawingGate all-around FinFET device and a method of manu… — patent drawing
Representative drawings from the patent document.
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Highly cited patent families surfaced by this query
#PatentCitations
1Barrier layer for FinFET channels603
2FINFET Structures and Methods of Forming the Same564
3Reduced resistance SiGe FinFET devices and method …334
4Barrier Layer for FinFET Channels261
5Finfets and methods for forming the same148
6FinFET Design Controlling Channel Thickness147
7Finfet process compatible native transistor138
8Bulk finfet with punchthrough stopper region and m…135

Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.

Source: Patsnap Eureka. Citation-ranked patent families surfaced by this query.Open in Eureka →
Insights

What the patent structure implies for R&D investment decisions

The field’s concentration, declining annual cadence, and narrow technology footprint each carry distinct implications for teams assessing where to build, license, or design around.

Decline

Post-peak decline: core FinFET interconnect IP is consolidating

The lifecycle stage is Decline, with annual filings easing back from the 2019 peak and a recent-window growth rate of –55%. New entrants face a dense prior-art landscape in the dominant H01L device classes. R&D investment is more defensible in adjacent or application-specific branches than in the already-crowded core device structures.

Lifecycle: Decline
Concentration

Five filers hold 89% of the ranked cohort’s records

The top five filers — TSMC, IBM, Intel, Globalfoundries, and Adeia Semiconductor Solutions — collectively control 89% of the hundred largest filers’ combined patent records. This level of concentration means that freedom-to-operate analysis must engage directly with TSMC’s and IBM’s portfolios before any process or material change can be validated. Licensing or cross-licensing arrangements with these incumbents are likely prerequisites for new entrants.

High concentration
Collaboration

IBM and Globalfoundries are the most active co-filers; IBM anchors multiple bilateral relationships

The most active co-filing pair is IBM and Globalfoundries with 8 joint filings, reflecting their historical joint development program. IBM also co-filed with its own Chinese subsidiary (4 filings) and with IBM United Kingdom Ltd (2 filings), and with IBM Deutschland GmbH (1 filing). Intel co-filed 4 records with inventor Ghani Tahir. TSMC shows no collaborative filings in this evidence, consistent with its predominantly proprietary R&D model.

IBM–GF dominant pair
Geography

US filings overwhelmingly dominate; international coverage is thin

The United States is the lead filing jurisdiction with 772 patent records, far ahead of Germany at 43, WIPO (PCT) at 38, and EPO at 27. Taiwan, the home jurisdiction of the field’s dominant filer TSMC, accounts for only 5 records, suggesting that the primary IP protection strategy targets the US market and litigation venue. Teams seeking geographic arbitrage or freedom-to-operate outside the US may find comparatively lighter coverage in Asian and European jurisdictions.

US-centric
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Top collaboration links
ApplicantCollaboratorCo-filings
International Business Machines CorporationGlobalfoundries Inc.8
International Business Machines CorporationIBM China Co. Ltd.4
GHANI TAHIRIntel Corporation4
International Business Machines CorporationIBM United Kingdom Ltd.2
International Business Machines CorporationIBM Deutschland GmbH1

Co-filing pairs, ranked by the number of jointly-filed patent families.

Source: Patsnap Eureka. Insights are derived from applicant ranking, collaboration, lifecycle, and jurisdiction evidence.Explore insights →
Leaders

TSMC and IBM lead on volume; both show declining momentum from peak years

The two dominant players differ in their role: TSMC’s portfolio is process-manufacturing-oriented across H01L 29 and H01L 21, while IBM’s overlapping focus reflects its foundational materials and device-architecture research, much of it developed in partnership with Globalfoundries.

Leader · Taiwan Semiconductor Manufacturing Co. Ltd.

Taiwan Semiconductor Manufacturing Co. Ltd.

TSMC holds 435 patent records, the largest total in the ranked cohort by a factor of more than two. Its technology emphasis is concentrated in H01L 29, H01L 21, and H01L 27 — core semiconductor device structure and fabrication classes. Recent momentum shows a –49% decline versus the prior period, consistent with the field-wide post-2019 contraction and TSMC’s shift of leading-edge R&D toward gate-all-around and beyond-FinFET architectures.

patent records: 435
Challenger · International Business Machines Corporation

International Business Machines Corporation

IBM holds 194 patent records and focuses on the same H01L 29, H01L 21, and H01L 27 classes, reflecting its deep semiconductor materials-science heritage. Its recent momentum shows a steep –81% decline, the sharpest among the major incumbents, which aligns with IBM’s well-documented reduction of its own semiconductor fabrication activities and transfer of process IP to partners. IBM remains the most active collaborative filer, anchoring the IBM–Globalfoundries co-development record.

patent records: 194
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Intel CorpGlobalfoundries US Inc+ more
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Leading-applicant momentum (recent 3 yrs, lag-adjusted)
ApplicantRecent (3 yrs)Trend
Taiwan Semiconductor Manufacturing Co. Ltd.82▼ -49%
International Business Machines Corporation10▼ -81%
Intel Corporation11▼ -52%
Applied Materials Inc.1▲ new entrant
Samsung Electronics Co. Ltd.2▲ new entrant
Sony Semiconductor Solutions Corporation2▲ new entrant
Globalfoundries US Inc.4▲ new entrant
Source: Patsnap Eureka. Patent record counts are from the applicant ranking; momentum is recent-period versus prior-period filing.Explore players →
Adjacent Branches

Under-served branches adjacent to the dominant H01L core

Several IPC branches appear at the periphery of the current corpus with comparatively low patent-record counts. These are observations of relative sparsity; whether they represent actionable opportunities depends on technical fit and entry feasibility.

H10B · Memory device manufacture

H10B accounts for 48 patent records and a 3% share of classified records in this corpus — sparse relative to the dominant H01L classes. As FinFET-based SRAM and embedded memory cells increasingly require low-resistance metal fill and barrier-layer substitution, the intersection of FinFET interconnect materials with memory-specific fabrication constraints is technically plausible. Incumbent memory-focused filers such as Samsung Electronics (which already shows H10B10 in its tech focus) and Micron Technology are natural entry points, and the low existing coverage suggests room for differentiated filings targeting memory-cell integration flows.

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H10N · Other electric solid-state devices

H10N holds only 15 patent records and a 1% share, making it the sparsest named branch in the whitespace list. This class covers non-standard solid-state device types — including thermoelectric, piezoelectric, and tunnel-junction devices — where FinFET-compatible low-resistance interconnect materials could enable new integration schemes. The sparse coverage and the absence of any dominant incumbent filing in this branch mean that a targeted program here faces lower freedom-to-operate risk, though the commercial volume addressable is narrower than in the core device classes.

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See all adjacent branches, their share of classified records, and the filers active in each.
H10W (power/compound semiconductor integration)G11C · Static and digital memories+ more
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Source: Patsnap Eureka. Adjacent branches are identified by comparatively low patent-record share within the classified corpus.Explore emerging →
Route Matrix

How leaders differ by technology route across H01L sub-classes

Route coverage across the main technology branches in the current evidence set.

PlayerH01L 29 · Semiconductor devicesH01L 21 · Semiconductor devicesH01L 27 · Semiconductor devicesH10D 62 · Semiconductor devices (general)H10D 84 · Semiconductor devices (general)
Taiwan Semiconductor Manufacturing Co. Ltd.Strong · 423Strong · 400Strong · 215Moderate · 186Moderate · 170
International Business Machines CorporationStrong · 256Strong · 203Moderate · 107Moderate · 82Moderate · 62
Intel CorporationStrong · 104Strong · 72Moderate · 48Moderate · 25Emerging · 19
Globalfoundries Inc.Strong · 35Strong · 25Strong · 18Moderate · 9Emerging · 7
Samsung Electronics Co. Ltd.Strong · 10AbsentModerate · 5Moderate · 3Moderate · 3
Applied Materials Inc.Strong · 11Strong · 8AbsentAbsentAbsent
Source: Patsnap Eureka. Matrix values are measured in patent records and should not be compared directly with family-level applicant totals.Compare in Eureka →
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This report’s underlying patent dataset — filings, assignees, technology clusters — is open for developers via MCP and REST API. Free to start, 10,000 credits, no credit card required.

Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.

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