GaN HEMT Gate Dielectric Patents: Who Leads, Filing Trends 2026
- Filings peaked in 2017 at 191 and have declined since, with the most recent full year sitting well below the midpoint of the range — a maturing rather than an expanding claim space.
- Every tracked assignee shows 0 filings in the latest year, including firms with -100% year-on-year change, suggesting either a filing lag or a genuine pullback across the field at once.
- H01L and H10D dominate the IPC mix at 1,563 and 700 records, while power-conversion classes like H02M (97) and H02J (39) remain comparatively thin — a gap between device claims and system-level integration claims.
Filing growth compares 2021 (74 records) with 2024 (74) — a three-year span. 2024 is the most recent year we treat as complete: publication lags filing by roughly 18 months, so 2025 onwards are still filling in and any growth rate that ends there would understate the field. Top-5 share is the combined record count of the five largest assignees divided by all 1,745 records in scope (CR5), not by the ranked leaders only.
What this landscape covers
Gate dielectric design in gallium nitride high electron mobility transistors sits at the junction of device physics and power electronics: it governs threshold voltage stability, gate leakage and long-term reliability in MIS-HEMT structures. This landscape draws on 1,745 patent families published between 2015 and mid-2026, filtered to records that combine GaN HEMT or GaN transistor language with gate dielectric, gate insulator, or MIS-HEMT dielectric claim language. The set spans device architecture, gate stack materials, and the power and RF circuits that depend on them.
Publication lags filing by roughly eighteen months, so the apparent drop in the last one to two years understates actual filing activity; treat the tail of the trend as provisional rather than a confirmed decline.
Filing trend and technology composition
Two views of the same 1,745-family dataset: how filing volume has moved year over year, and how those families distribute across IPC subclasses.
A peak in 2017, a decline since
Filings ran at 191 in 2017 and had fallen to 124 by the 2022 midpoint, with 2026 (partial) at 3. The shape reads as flat-to-declining rather than growing, consistent with a technology whose core claim space was staked out early and is now being consolidated rather than expanded.
Device claims outweigh system claims
H01L (1,563) and H10D (700) carry the bulk of the filings, covering core semiconductor device structure. H10W (232) and H10P (192) follow at a distance, with H03K pulse-technique claims at 136. Power conversion and power supply classes — H02M at 97 and H02J at 39 — are comparatively under-represented, meaning most of the claimed ground is at the device and stack level rather than in the circuits and systems that use the device.
Shares are the percentage of the 1,745 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on Gallium Nitride HEMT Gate Dielectric with Eureka
This page is one run against one query. Ask Eureka your own question about gallium nitride hemt gate dielectric and every answer comes back with the patent numbers behind it.
Try EurekaRepresentative and most-cited records
HYBRID TYPE AlGaN/GaN HEMT DEVICE
The present invention relates to a structure of hybrid type AlGaN/GaN high electron mobility transistor (HEMT) Device, which comprises a silicon substrate structure, and both of a depletion-mode (D-mode) AlGaN/GaN HEMT and a p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT disposed on the silicon substrate structure. By connecting the depletion-mode (D-mode) AlGaN/GaN HEMT to the p-GaN gate structure of the p-GaN gate enhancement-mode (E-mode) AlGaN/GaN HEMT in device design, the p-GaN gate E-mode AlGaN/GaN HEMT may be protected under any gate voltage.Filed by an individual inventor rather than a major assignee, illustrating that cascode-style D-mode/E-mode integration claims remain accessible outside the largest filers.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20170358670A1 | Diamond on iii-nitride device | 476 |
| 2 | US7799699B2 | Printable semiconductor structures and related methods of making and assembling | 460 |
| 3 | US20080157235A1 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics | 447 |
| 4 | US20070032089A1 | Printable Semiconductor Structures and Related Methods of Making and Assembling | 347 |
| 5 | US20090267078A1 | Enhancement Mode III-N HEMTs | 323 |
| 6 | US20090072272A1 | Enhancement mode gallium nitride power devices | 308 |
| 7 | US8039847B2 | Printable semiconductor structures and related methods of making and assembling | 300 |
| 8 | US20100025730A1 | Normally-off Semiconductor Devices and Methods of Fabricating the Same | 298 |
| 9 | US20090146185A1 | Insulated gate e-mode transistors | 283 |
| 10 | US20040124435A1 | Homoepitaxial gallium-nitride-based electronic devices and method for producing same | 282 |
Citation counts favour older records simply because they have had more time to accumulate citations; read them as a signal of influence within this corpus, not as a ranking of current technical importance.
Each row carries its publication number; clicking a row searches Eureka by that number.
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Browse MCP servers →What the numbers mean for a filing decision
Three read-throughs from the trend, IPC composition and citation data that matter more for strategy than the raw counts alone.
The core device claim space was staked out early
The 2017 peak of 191 filings, against a 2022 midpoint of 124, describes a field where the foundational gate-stack and dielectric-interface claims were largely filed in the first half of the tracked period. New entrants now compete against a dense, already-published prior art base for the core structures rather than an open field.
Device-level claims crowd out system-level ones
H01L and H10D together account for the large majority of records, while H02M power-conversion claims sit at 97 and H02J power-supply claims at just 39. That imbalance means dielectric and gate-stack structure is heavily claimed, but the power-circuit context in which the device is deployed is comparatively open.
A simultaneous pullback, not a single laggard
Every assignee with recent-year momentum data shows zero filings in the latest year, several logging a -100% year-on-year change. Because publication lags filing by around eighteen months, part of this is a reporting artefact — but the uniformity across otherwise-active filers is still notable and worth revisiting once the 2025-2026 cohort finishes publishing.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to gallium nitride hemt gate dielectric, with the prior art for and against each one.
Who is active, and where the pairs cluster
Ten co-assignee pairs appear in the dataset, concentrated around a small number of firms working jointly with named inventors — a pattern typical of large device makers that file with named engineering leads rather than pure corporate assignees.
Joint filing concentrated around named inventors
The strongest co-assignee pairs in the dataset link a single corporate assignee to a named individual inventor at 8 shared families each, rather than to another company. This points to internal engineering teams as the practical unit of invention, even where the corporate assignee is what shows up in a landscape search.
US-centric filing with a meaningful PCT and China presence
The United States receives close to twice the filings of the next-largest office. Europe, WIPO/PCT and China each carry a substantial but smaller share, indicating that protection strategy for this technology is built around a US anchor filing with selective international extension.
No visible new activity from tracked leaders
None of the assignees with tracked momentum show filings in the most recent year, and most show a -100% year-on-year drop from the prior year. Given the ~18-month publication lag, this is likely to fill in as later filings publish, but it means recent competitive positioning cannot yet be read from public filings alone.
| Assignee | Recent year | YoY |
|---|---|---|
| Intel Corporation | 0 | -100% |
| Transphorm, Inc. | 0 | -100% |
| Navitas Semiconductor | 0 | — |
| Texas Instruments Incorporated | 0 | -100% |
| HRL Laboratories, LLC | 0 | — |
| Wolfspeed, Inc. | 0 | — |
| International Rectifier Corporation | 0 | — |
| The Board of Trustees of the University of Illinois | 0 | — |
Where to take this analysis
The dataset points to a maturing core and a thinner system-level layer. These are the practical next steps for a team deciding where to file or where to watch.
Map the white space in power-circuit integration
H02M and H02J claims are thin relative to the device-level H01L and H10D volume. A team building power-conversion systems around GaN HEMT dielectric structures should check whether its integration claims are genuinely novel against this thinner layer before assuming the crowded device space is the only risk.
Explore white space in EurekaWatch for the 2025-2026 publication catch-up
Every tracked assignee shows zero filings in the latest year, which is more likely a publication-lag artefact than a real halt. Revisit assignee momentum in six to twelve months once the current filing cohort has had time to publish.
Track assignee activity in EurekaCheck freedom-to-operate against high-citation records
The most-cited records in this corpus date from the earlier part of the tracked period and cover foundational device and interconnect structures. Any new gate dielectric filing should be checked against these before assuming an open path.
Run a citation check in EurekaCommon questions on GaN HEMT gate dielectric patents
Filings in this dataset ran at 191 in 2017, the peak of the tracked range, then fell to 124 by the 2022 midpoint and down to single digits in the still-publishing 2026 year. This pattern usually means the foundational gate-stack and dielectric-interface architectures were claimed early, so later filers shifted toward narrower improvements or moved into adjacent circuit-level claims instead. It does not mean the technology stopped developing; publication lags filing by around eighteen months, so the most recent one to two years understate real activity.
H01L (semiconductor devices) and H10D (semiconductor devices, general) carry the largest share of records at 1,563 and 700 respectively, reflecting that most claims describe device and gate-stack structure directly. H10W, H10P and H03K follow at lower volumes, covering related device and pulse-technique claims. Power-conversion and power-supply classes, H02M and H02J, are comparatively thin, which is useful to know if you are drafting claims that connect the dielectric structure to a specific power circuit application.
The device-level claim space, covered mainly by H01L and H10D, is dense after a decade of filing and includes several heavily-cited foundational records. The power-circuit integration layer — H02M and H02J — is much thinner, which suggests more room for new claims that connect gate dielectric structures to specific conversion or supply circuits rather than claiming the dielectric stack itself. A freedom-to-operate check against the most-cited records is still advisable before filing in the core device space.
The dataset tracks assignee activity through co-assignee pairs and recent-year momentum rather than a single named leader, and the assignees with the strongest recent history all show zero filings in the latest tracked year. Several show a -100% year-on-year change, which is consistent with a broader slowdown across the field rather than one company pulling back. Because of publication lag, this recent-year picture should be treated as provisional and revisited once later filings finish publishing.
Citation counts in this corpus are useful but biased toward older records simply because they have had more years to accumulate citations from later filings. The most-cited records here date to the earlier part of the tracked period and cover foundational device and interconnect structures rather than the most recent innovations. Use citation rank as a signal of historical influence and a starting point for freedom-to-operate checks, not as a measure of which recent filings are most significant.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
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Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.