Gallium Oxide Heterojunction Diode Patents 2026 — PatSnap Eureka
Gallium Oxide Heterojunction Diode Patents 2026
β-Ga2O3 offers a theoretical breakdown field of 8 MV/cm and a Baliga Figure of Merit up to 3,444 — 4× GaN and 10× SiC. This report maps ~70 retrieved patent and literature records spanning 2014–2026 across heterojunction architectures, edge termination, and substrate strategies.
Why β-Ga2O3 Heterojunction Diodes Are a Key Power Device Architecture
Beta-phase gallium oxide (β-Ga2O3) features a bandgap of 4.5–4.9 eV, a theoretical breakdown field of 8 MV/cm, and a Baliga Figure of Merit up to 3,444 — positioning it as a compelling ultra-wide-bandgap semiconductor for next-generation power electronics. Its intrinsic inability to achieve reliable p-type doping has made heterojunction architectures the dominant device paradigm.
The dominant p-type partners in this dataset are NiO/NiOx (the most widely cited proxy for p-Ga2O3), p-type diamond (thermal conductivity >2000 W/m·K), 2D materials including black phosphorus, MoTe2, WSe2, and PtSe2, and p-GaN leveraging established epitaxy infrastructure. Each partner addresses the fundamental p-type doping barrier through distinct material and process routes.
Core diode architectures span Schottky barrier diodes (SBDs), Junction Barrier Schottky (JBS/JBSD) diodes, and true pn heterojunction diodes (HJDs), as well as hybrid structures combining field plates, resistive field plates, trench terminations, field limiting rings (FLRs), and junction termination extensions (JTEs) based on p-type oxide materials.
In this dataset, filings span 2014 to mid-2026 with clearly accelerating publication cadence after 2020. Among approximately 70 retrieved records, China accounts for ~89% of jurisdiction-identified filings, and in this dataset Xidian University leads with approximately 10 records, followed by Xidian University Guangzhou Research Institute and Fuzhou University at approximately 5 records each.
Filing Trends and Technology Cluster Distribution in the Ga2O3 Heterojunction Dataset
In this dataset, filings accelerate markedly after 2020 with the proliferation of NiO/Ga2O3 JBS architectures and edge termination variants. Technology clusters range from NiO-based power diodes and diamond heterojunctions to 2D material photodetectors and heterogeneous substrate platforms.
Technology Cluster Distribution — Ga2O3 Heterojunction Records (Dataset Snapshot)
NiO/Ga2O3 heterojunction diodes and JBS structures represent the largest single technology cluster in this dataset, followed by diamond/Ga2O3 heterojunctions and 2D material vdW configurations.
↗ Click bars to exploreGa2O3 Heterojunction Filing Activity by Period — Dataset Snapshot
Filing activity in this dataset rises sharply from a baseline of ~3 records before 2020 to an estimated ~35 records in the 2023–2026 period, confirming an accelerating innovation cadence in the most recent filing window.
↗ Click bars to exploreKey Application Areas for Ga2O3 Heterojunction Diode Technology
In this dataset, Ga2O3 heterojunction diodes are being developed for four primary application domains spanning high-voltage power rectification, day-blind UV photodetection, RF/terahertz sources, and monolithic GaN+Ga2O3 power integration.
High-Voltage Power Rectification
The primary commercial application domain in this dataset targets industrial motor drives, new energy vehicle inverters, smart grid converters, high-speed rail traction systems, data center power supplies, and aerospace power modules. Cited voltage targets range from 110 V to more than 10 kV, with a milestone BFOM of 1.47 GW/cm2 reported for a high-k field-plated SBD in 2021. Xidian University’s 2026 vertically structured NiO/Ga2O3 HJD explicitly targets greater than 10 kV power conversion.
Power ElectronicsDay-Blind UV Photodetection
Ga2O3’s intrinsic day-blind UV absorption cutoff at approximately 250 nm makes it suitable for solar-blind photodetectors covering 200–280 nm. Applications cited in this dataset include missile warning, fire monitoring, UV astronomy, space communications, and corona discharge detection. Hangzhou Zixin Optoelectronics (2020) developed an Sn:β-Ga2O3 base with multi-oxide heterojunction array (NiO, ZnO, La2O3, Ta2O5), while the Ningbo CAS Institute filed an ε-Ga2O3 heterojunction day-blind detector in 2025 addressing interfacial defect problems in non-β phases.
OptoelectronicsRF and Terahertz Sources
A smaller cluster within this dataset targets RF power amplification and terahertz sources using Ga2O3’s high theoretical electron saturation velocity of 2×10^7 cm/s. Hubei Jiufengshan Laboratory (2023) filed on an n-n+ Ga2O3 vertical Gunn diode targeting greater than 300 GHz solid-state THz output. A 2023 literature roadmap identified RF as a key application domain alongside power switching for Ga2O3 FETs.
RF / THzMonolithic GaN+Ga2O3 Power Circuits
The most recent filing wave in this dataset includes GaN+Ga2O3 monolithic integration combining GaN’s temperature stability with Ga2O3’s breakdown advantage. Xiamen Changelight (2025) filed on a monolithic co-integration of GaN HEMT and Ga2O3 power devices to reduce parasitic inductance and contact resistance. This approach leverages mature GaN epitaxy infrastructure as a heterojunction partner with band engineering to form hole barriers at the p-GaN/n-Ga2O3 interface.
Integrated Power ICsLeading Assignees in Ga2O3 Heterojunction Diodes — Dataset Snapshot
In this dataset, Xidian University holds the largest estimated filing count at approximately 10 records in retrieved records, covering power diodes, diamond/NiO heterojunctions, FinFET structures, and edge termination. Chinese academic institutions account for the overwhelming majority of records in this dataset, with commercial assignees including China Resources Microelectronics, Xiamen Changelight, and Galax Technology representing an emerging industrial cohort.
Top Assignees by Filing Count — Ga2O3 Heterojunction Diodes (Dataset Snapshot)
↗ Click bars to exploreXidian University
Xidian University is the top assignee in this dataset with an estimated 10 records spanning 2022–2026, covering NiO/Ga2O3 power diodes, diamond heterojunction diodes, FinFET structures, and advanced edge termination methods. Key patents include a 2026 Ga2O3 Schottky Diode with Inclined Field Plate and NiO Heterojunction for dual-mechanism termination and a 2026 Vertical Structure Ga2O3 Heterojunction Diode targeting greater than 10 kV power conversion. Patents include both granted CN applications and pending records across this filing window.
China — CNFuzhou University
Fuzhou University holds approximately 5 records in this dataset spanning 2023–2025, focusing on field-plate Schottky barrier diodes, resistive field plate technology, and FinFET structures for high-voltage Ga2O3 applications. A 2023 patent covers Trench and Field Plate Composite Termination for High-Voltage Ga2O3 SBDs, and a 2025 filing introduces semi-insulating resistive field plate technology to achieve surface field uniformity in lateral SBDs — replacing conventional stepped dielectric plates. All records are CN-jurisdiction filings.
China — CNSix Frontier Signals in Ga2O3 Heterojunction Technology (2025–2026)
Based on the most recent filings in this dataset (2025–2026), six directional signals are visible spanning new Ga2O3 phases, substrate platforms, and device architectures that extend beyond the established NiO/Ga2O3 baseline.
ε-Phase Ga2O3 Heterojunctions
Beyond β-Ga2O3, ε-Ga2O3 is being actively pursued for its spontaneous polarization enabling high-density 2DEG and superior substrate compatibility. Ningbo CAS filed an ε-Ga2O3/Diamond Heterojunction Diode in 2026 exploiting ε-phase compatibility for higher-quality diamond integration. Sun Yat-sen University also filed a Ga2O3 Heterojunction Growth Method in 2025 targeting ε-phase heterostructures, signaling a growing research cohort around non-β Ga2O3 phases.
Ga2O3-on-Silicon (GaOxS) Substrate Platform
The Board of Regents of the University of Texas System filed a Gallium-Oxide-On-Silicon (GaOxS) patent in 2025 using metal-oxide buffer layers (MgO, STO, alumina) to manage lattice mismatch and enable Ga2O3 epitaxy on low-cost Si wafers. This represents a critical cost-reduction and fab-compatibility pathway for volume manufacturing. The GaOxS approach is the only US-origin power device filing identified in this dataset, indicating a divergent substrate strategy versus the dominant CN approach of native or sapphire substrates.
NiO/Ga2O3 vs. Diamond/Ga2O3 Heterojunction Diode Architectures
Click any row to explore further.
| Dimension | NiO/Ga2O3 Heterojunction | Diamond/Ga2O3 Heterojunction |
|---|---|---|
| p-type partner | NiO or NiOx (bandgap ~3.7 eV) | p-type diamond (bandgap 5.5 eV) |
| Thermal conductivity | NiO ~10 W/m·K (low) | Diamond >2000 W/m·K (very high) |
| Hole concentration control | Tunable via O2 stoichiometry or Li doping of NiOx | Fixed by CVD boron doping of diamond substrate |
| Device architectures | Planar HJD, JBS, JTE, trench NiO, inclined field plate | Vertical pn diode, lateral H-terminated, thin-film bonded |
| Maturity in dataset | ~25 records; filings from 2021 onwards — near-term commercialization track | ~7 records; filings from 2022 onwards — high-value, longer-horizon |
| Key technical barrier | NiO/Ga2O3 interface quality and p-concentration uniformity | Large-area p-diamond substrate availability and interface defect density |
| Lead assignees in dataset | Xidian University, Fuzhou University, UESTC, Chongqing Univ. of Technology | Xidian Guangzhou Inst., CETC No. 55, Ningbo CAS, Xiamen University |
| Voltage targets cited | 110 V to >10 kV power switching | High breakdown; specific voltage targets not uniformly cited in records |
Frequently Asked Questions: Ga2O3 Heterojunction Diode Patents
Reliable p-type doping in Ga2O3 remains unresolved due to oxygen vacancy self-compensation and deep acceptor levels. Heterojunction diode architectures bypass this by integrating n-type Ga2O3 with external p-type semiconductor partners such as NiO, diamond, p-GaN, or 2D materials, forming pn junctions without requiring p-type Ga2O3.
β-Ga2O3 has a theoretical BFOM of up to 3,444, which is approximately 4× that of GaN and 10× that of SiC, according to the content. A high-k field-plated vertical β-Ga2O3 SBD achieved a measured BFOM of 1.47 GW/cm2 in a 2021 literature record.
NiO (nickel oxide / NiOx) is the most widely cited p-type partner in this dataset, representing approximately 25 of the ~70 retrieved records. NiO’s hole concentration is tunable via oxygen stoichiometry or lithium doping, and it appears in planar heterojunction diodes, JBS structures, and junction termination extension (JTE) configurations.
In this dataset, edge termination strategies include trench terminations, field limiting rings (FLRs), junction termination extensions (JTEs) using dual-concentration NiOx layers, high-k dielectric field plates (HfO2, Al2O3), inclined field plates, composite trench plus field plate structures, resistive field plates using semi-insulating films, beveled trench terminations, and Mg ion implantation edge termination combined with NiO heterojunction diodes.
China accounts for approximately 62 of the ~70 records in this dataset (~89%), predominantly from Chinese universities and public research institutes. The United States contributes 2 records (University of Texas GaOxS patent and literature reviews), India contributes 1 record, and South Korea contributes 1 record (Chipsk Corp.).
The earliest record in this dataset is a 2014 Chinese Academy of Sciences Metal Research Institute patent on κ-Ga2O3/β-Ga2O3 nanowire heterostructure growth. The most recent records are from 2026, including Xidian University’s Ga2O3 Schottky Diode With Inclined Field Plate and NiO Heterojunction and the Ningbo CAS ε-Ga2O3/Diamond Heterojunction Diode.
Data and insights on this page are based on a limited patent and literature dataset and are for reference only. Figures may not represent the complete technology landscape.