GaN Device Health Monitoring Patent Snapshot 2026
GaN device health monitoring is an early-stage, academically driven field with just 4 patent families on record, concentrated in China and India. All active filers are universities, with no evidence yet of industrial entrants staking protective positions.
A nascent field led entirely by academic institutions
The corpus spans 4 patent families, shared equally among four applicants: China — each holding 1 patent family.
Concentration is absolute: the top five filers account for 100% of the ranked applicants visible in this query’ combined total, and all four active applicants are universities. There is no visible tier gap between them — the field has no established leader by volume.
| # | Applicant | Patent families | Share |
|---|---|---|---|
| 1 | Ecole Centrale School of Engineering, Mahindra University | 1 | |
| 2 | Xidian University | 1 | |
| 3 | Tsinghua University | 1 | |
| 4 | UNIV OF ELECTRONICS SCI & TECH OF CHINA | 1 |
The equal distribution across four academic institutions implies that no single organization has yet built a blocking portfolio. This leaves significant room for first-mover industrial entrants to define the IP architecture of the field.
Filing activity only began in 2023, and the most recent periods remain subject to publication lag, so the full scope of recent activity is likely undercounted. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.
Filing activity is recent and technology emphasis spans thermal and electrical monitoring
The annual filing trend and technology branch breakdown together reveal a field that only became active from 2023 onward, with primary technical focus on temperature measurement and semiconductor device structures.
Annual filing trend
No filings appear before 2023; one family per year was recorded in 2023, 2024, 2025, and 2026. The 2025 and 2026 data points are subject to publication lag and are likely undercounted — the apparent plateau should not be read as a ceiling on activity.
↗ Hover for values · click a bar to ask EurekaTechnology composition
Temperature measurement (G01K) and semiconductor devices (H01L) each account for the largest share of IPC classifications, reflecting a focus on junction-temperature sensing and device-level integration. Protective circuit arrangements (H02H), electric and magnetic measurement (G01R), power conversion (H02M), and pulse technique and logic circuits (H03K) each appear once, indicating early-stage breadth across monitoring and protection sub-domains.
↗ Hover for values · click a bar to ask EurekaHighly cited patent families surfaced by the query
Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.
一种氮化镓功率器件的结温监测方法及装置
本发明提供一种氮化镓功率器件的结温监测方法及装置，该方法包括：确定功率器件的栅源电压和漏源电压；根据栅源电压和漏源电压，计算功率器件的导通延时；基于预先建立的导通延时和结温之间的映射关系，根据计算得到的功率器件的导通延时，确定功率器件的结温。本发明的方法能够在不同负载条件和环境温度变化下，保持测量结果的高精度、高线性度和高鲁棒性，实现快速、稳定、非侵入式的结温实时监测，可提升功率器件的热保护能力，从而提高器件可靠性。 (excerpt from the patent abstract)
| # | Patent | Citations |
|---|---|---|
| 1 | 具备结温监测和过温保护能力的GaN功率芯片及制备方法 | 2 |
| 2 | 一种具有嵌入温度监测单元的GaN器件的过温保护电路 | 1 |
Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.
Assignee snapshot from the current evidence set
The applicants below are visible in this query result. Because the evidence set is relatively small, read this section as a directional snapshot rather than a full competitive ranking.
Xidian University
Xidian University (Xidian Univ) holds 1 patent family with technical emphasis on semiconductor device structures across H01L 21, H01L 23, and H01L 29 subclasses, indicating a device-integration approach to health monitoring. The institution entered as a new entrant in the recent filing window, signalling an early but deliberate move into the GaN reliability domain.
families: 1University of Electronic Science and Technology of China
The University of Electronic Science and Technology of China holds 1 patent family spanning temperature measurement (G01K 13), semiconductor devices (H01L 23), and protective circuit arrangements (H02H 5) — the broadest multi-domain coverage among the four applicants. Also a new entrant in the recent window, this institution’s cross-domain approach positions it to address integrated monitoring-and-protection architectures.
families: 1Frequently asked questions
The current evidence base contains 4 patent families in scope. All were filed between 2023 and 2026, indicating this is an embryonic area with very limited prior IP.
Four academic institutions each hold 1 patent family: Ecole Centrale School of Engineering at Mahindra University (India), Xidian University, Tsinghua University, and the University of Electronic Science and Technology of China. No industrial assignees are present in the current evidence.
China accounts for 3 of the 4 patent records, with 1 record filed in India. No filings are recorded in the United States, Europe, Japan, or South Korea based on the current evidence.
Temperature measurement (G01K) and semiconductor device structures (H01L) are the most common IPC classifications, each appearing in 2 patent records. Protective circuit arrangements (H02H), electric and magnetic measurement (G01R), power conversion (H02M), and pulse technique and logic circuits (H03K) each appear once.
The most-cited work in the corpus relates to a GaN power chip with junction-temperature monitoring and over-temperature protection capability (2 citations), and a GaN device over-temperature protection circuit with an embedded temperature monitoring unit (1 citation).
Based on the evidence, the 4 patent families on record are all held by universities and filed only in China and India. Major power-electronics markets including the US, Europe, Japan, and Korea show no recorded filings in this specific domain, suggesting broad freedom to operate in those jurisdictions — though a full freedom-to-operate analysis would require verification against related GaN reliability and sensing art.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
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