GaN HEMT Gate Dielectric Patents: Leaders, Trends & White Space 2026
A data-backed view of the GaN HEMT gate dielectric patent landscape: who is filing, how concentrated the field is, and where the technology white space sits.
Filing growth = 2021 (4 records) → 2024 (7); 2024 is the last year we treat as complete. Top-5 share = the 5 largest assignees ÷ all 70 records in scope (CR5), not the ranked leaders only.
What this landscape covers
GaN HEMT gate dielectric technology sits at the intersection of high-electron-mobility transistor design and the insulating or passivation layers that control gate leakage, threshold stability and breakdown voltage. This landscape draws on 70 published records classified under semiconductor device IPC codes (H01L, H10D and related subclasses) that reference GaN HEMT structures together with gate dielectric, gate insulation or gate insulator terminology. The scope spans 2015 through the 2026 data cut-off, giving a decade-plus view of how claim activity has built up around non-native dielectric layers, passivation schemes and threshold-control structures on GaN HEMT gates.
Because publication typically lags filing by around 18 months, the most recent one to two years in any trend line will understate real filing activity — a pattern to keep in mind when reading the year-by-year figures below.
Filing trend and technology composition
Two views of the same 70-record dataset: how filing activity has moved year over year, and which IPC subclasses carry the claim weight.
Filing trend
Annual filings climbed from 4 records in 2017 to a peak of 9 in 2023, with the 2021-to-2024 span alone showing a 75% rise (4 to 7 records). The 2025-2026 figures are still filling in as later-filed applications publish, so the recent-year dip is a lag artefact, not a slowdown.
Publication lags filing by roughly 18 months, so 2025 onwards are still filling in. Growth rates on this page therefore end at 2024; running them to the last bar would understate the field.
Technology composition
H01L (general semiconductor devices) covers 91.4% of the 70 records, with H10D — the more specific semiconductor-device general subclass — present in 34.3%. Smaller but distinct clusters sit in H10W, pulse/logic circuitry (H03K) and other solid-state device classes (H10N), each around 10% of records, pointing to gate-dielectric work that increasingly touches switching and circuit-level claims rather than device structure alone.
Shares are the percentage of the 70 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on GaN HEMT Gate Dielectric Patent Landscape with Eureka
This page is one run against one query. Ask Eureka your own question about gan hemt gate dielectric patent landscape and every answer comes back with the patent numbers behind it.
Try EurekaThe most-cited records in this dataset
Sensors using high electron mobility transistors (US20100188069A1)
Embodiments include sensors built from GaN HEMTs carrying capture reagents on the gate region: a thin gold layer with bound antibodies, a thin gold layer with chelating agents, a non-native gate dielectric, or dielectric nanorods with an immobilized enzyme. The claimed methods extend to detecting breast cancer, prostate cancer, kidney injury and glucose using these gate-functionalised HEMT structures.Filed by University of Florida Research Foundation, Inc., published 2010-07-29 — one of the earliest and most-cited records in this dataset at 50 citations.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20150255547A1 | III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same | 98 |
| 2 | US20100188069A1 | Sensors using high electron mobility transistors | 50 |
| 3 | US20160373106A1 | High performance radio frequency switch | 44 |
| 4 | US20200111876A1 | Algan/gan heterojunction HEMT device compatible with si-CMOS process and manufacturing method therefor | 36 |
| 5 | CN101916773A | 一种双沟道MOS-HEMT器件及制作方法 | 34 |
| 6 | CN107316901A | 基于掺杂HfO<sub>2</sub>铁电栅介质的AlGaN/GaN增强型HEMT器件及制作方法 | 25 |
| 7 | CN108987474A | 一种增强型高电子迁移率晶体管及其制备方法 | 17 |
| 8 | CN109004029A | 具有金属氧化物/二氧化硅叠栅的GaN基MOS-HEMT器件及其制备方法 | 15 |
| 9 | CN102184943A | 一种增强型AlGaN/GaN HEMT器件及其制备方法 | 15 |
| 10 | JP2013074279A | Semiconductor device and manufacturing method of the same | 14 |
Citation counts are drawn from the searched corpus itself and skew toward older, earlier-filed records — read them as a signal of influence within this dataset, not as a ranking of current technical importance.
Patent titles are shown in the language they were filed in, not translated, so that each record stays verifiable against the original filing — a translated title will not match in Eureka or in any national register. Each row carries its publication number; clicking a row searches Eureka by that number.
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Browse MCP servers →What the concentration and filing pattern imply
Three patterns worth acting on before filing or licensing in this space.
The top of the field is tight, the tail is long
Five assignees hold 40.0% of all 70 records, and the top ten together hold 67.1%. Below that the ranking runs through 41 companies with modest counts each — a classic concentrated-core-plus-long-tail structure rather than a fragmented field.
Activity is building, not fading
The filing count rose from 4 records in 2021 to 7 in 2024, and 2023 alone produced 9 — the highest single year in the dataset. Treat the flatter 2025-2026 figures as a publication-lag artefact rather than a genuine slowdown.
Filing venue is heavily weighted to China
China accounts for 38 of the tracked receiving-office filings, more than double the United States (15), with India, Europe, WIPO and Japan each contributing single-digit counts. Any competitive read of this field has to weight Chinese-language prosecution activity heavily.
Claims cluster on device structure, with circuit-level classes as a smaller signal
The overwhelming majority of records sit in the general semiconductor-device class H01L, with a meaningful secondary cluster in H10D. Smaller shares in H03K and H10N mark where gate-dielectric work spills into switching and circuit-level claims — a narrower but potentially less contested space.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to gan hemt gate dielectric patent landscape, with the prior art for and against each one.
Where to take this analysis
This landscape identifies the pattern; deciding what it means for a specific filing or licensing strategy takes a closer read of the claims themselves.
Map freedom-to-operate against the leader group
Start with the assignees holding the top 40% of records before scanning the long tail — that is where the densest prior art sits and where a new filing is most likely to collide with existing claims.
Explore assignees in EurekaCheck the narrower IPC clusters for open claim space
H03K and H10N together account for a smaller share of records than H01L or H10D, which can mean either less interest or genuine white space — worth verifying claim-by-claim rather than assuming either.
Run a white-space search in EurekaTrack the 2023-2024 filing surge as it publishes forward
The peak year so far (2023, 9 records) and the 75% rise into 2024 suggest the field is still accelerating; publication lag means 2025-2026 filings are undercounted today.
Set an alert in EurekaCommon questions about this landscape
The assignee ranking behind this landscape lists 41 companies across 70 published records. Filing activity is concentrated rather than evenly spread: the top 5 assignees together hold 40.0% of all 70 records, and the top 10 hold 67.1%. That leaves a long tail of assignees with only one or two records each, which is typical of a field still being staked out rather than fully consolidated.
Filings rose from 4 records in 2021 to 7 in 2024, a 75% increase over that span, with the single highest year on record being 2023 at 9 filings. The apparent dip in 2025 and 2026 is not a real slowdown — publication typically lags filing by around 18 months, so recent years are still filling in as applications work through examination and publication. Any read of the most recent two years should treat the counts as a floor, not a ceiling.
The dominant class is H01L, the general semiconductor-devices code, covering 91.4% of the 70 records in scope. H10D, a more specific semiconductor-device subclass, appears in 34.3% of records. Smaller clusters sit in H10W, H03K (pulse technique and logic circuits) and H10N (other electric solid-state devices), each around 10%, marking where gate-dielectric work extends into switching and circuit-level claims rather than device structure alone.
China is by far the largest receiving office in this dataset with 38 filings, more than double the United States at 15. India, the European Patent Office and the WIPO PCT route each carry single-digit counts, and Japan trails with 2. A freedom-to-operate check limited to US and European filings would miss the majority of the documented activity in this field.
Citation counts inside this searched corpus favor older, earlier-published records simply because they have had more time to be cited by later filings — US20150255547A1 (98 citations) and US20100188069A1 (50 citations) are both from the earlier part of the dataset's window. High citation counts here are a signal of influence on later filings in this specific corpus, not a measure of current commercial or technical importance. A newer record with fewer citations may still represent the more relevant claim scope for current design work.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.