GaN LED Wafer-Scale Production Patent Snapshot 2026
The GaN LED wafer-scale production patent space is highly concentrated and nascent, with a small number of applicants holding the majority of filings and activity clustered around semiconductor device structures. HANBEAM leads on patent records, followed by Peking University as a notable new entrant, with filing volume remaining modest across the observed window.
HANBEAM leads a tightly held, early-stage field
HANBEAM holds the top position in the applicant ranking with 4 patent records, placing it ahead of Peking University (3 patent records) and a cohort of organizations each recording a single patent record.
The top five filers account for 77% of the combined total among the ranked applicants visible in this query, signaling a highly concentrated visible assignee structure with a pronounced gap between the top two applicants and the rest of the field.
| # | Applicant | Patent records | Share |
|---|---|---|---|
| 1 | HANBEAM | 4 | |
| 2 | Peking University | 3 | |
| 3 | FAGET LAURENCE MR | 1 | |
| 4 | LG Chem Ltd | 1 | |
| 5 | Shandong Inspur Huaguang Optoelectronics Co., Ltd. | 1 | |
| 6 | Sharp Corporation | 1 | |
| 7 | National Sun Yat-sen University | 1 | |
| 8 | Sino American Silicon Products Inc. | 1 |
HANBEAM’s lead, combined with Peking University’s recent entry momentum, suggests that both industrial and academic actors are staking early positions, but no single player has yet built a visible portfolio that would foreclose entry by new participants.
Note that the most recent filing periods are subject to publication lag and likely undercount true activity; conclusions on recency should be treated as provisional. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.
Activity burst in 2022 against a sparse multi-year baseline
The annual filing trend and technology composition charts together reveal a field that produced meaningful activity only in 2022 within the observed window, with semiconductor device classification showing visible activity in the technology mix.
Annual filing trend
Recorded filings were zero across 2017–2021, rose to 3 in 2022, and returned to zero in subsequent years through 2026. The post-2022 readings are subject to publication lag and should not be read as a genuine absence of activity. The single-year pulse likely reflects a small number of applicants filing concurrently rather than a sustained wave.
↗ Hover for values · click a bar to ask EurekaTechnology composition
Semiconductor device structures (H01L) account for the overwhelming share of classified patent records, consistent with the core wafer-level fabrication and LED device architecture focus of the field. A single patent record falls under photographic apparatus (G03B), indicating a marginal adjacent application rather than a structural technology shift.
↗ Hover for values · click a bar to ask EurekaHighly cited patent families surfaced by the query
Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.
一种氮化物LED的制备与无损界面分离方法
一种氮化物LED的制备与无损界面分离方法，采用原子辐照技术，改性在透明衬底上的二维原子晶体层，得到辐照区；在改性后的二维原子晶体层制备氮化物LED结构，再通过金属功能层固化支撑基板；从透明衬底背面入射可见光激光，定向破坏二维原子晶体层的辐照区，得到从透明衬底上分离出来的氮化物LED结构、金属功能层和支撑基板的整体结构。本发明能够实现界面无损分离，透明衬底的重复使用，与氮化物LED和Micro-LED的外延与加工工艺兼容，应用于晶圆级氮化物LED和微米级Micro-LED阵列的制造与分离，无需预置氮化物牺牲层，无需额外磨抛工艺；本发明节能环保、工艺简单并适于批量生产。 (excerpt from the patent abstract)
| # | Patent | Citations |
|---|---|---|
| 1 | Thin gallium nitride light emitting diode device | 50 |
| 2 | Method of fabricating GaN LED | 28 |
| 3 | 一种钝化层折射率渐变的GaN基发光二极管芯片及其制备方法 | 19 |
| 4 | Nitride LED structure with double graded electron … | 13 |
| 5 | Thin gallium nitride light emitting diode device | 8 |
| 6 | Thin gallium nitride light emitting diode device | 5 |
| 7 | Thin gallium nitride light emitting diode device | 1 |
Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.
What the competitive structure means for R&D planning
The combination of high concentration, a single active filing year, and sparse total volume shapes the strategic calculus for any organization evaluating entry or expansion in this space.
Life-cycle stage not yet determinable from evidence
The evidence does not provide a determinable life-cycle stage for this topic. The extremely low total volume and single-year filing pulse are consistent with either a very early-stage field or a narrowly scoped query capturing only a subset of a broader technology. R&D teams should cross-reference broader GaN and LED substrate patents before drawing maturity conclusions.
Stage: evidence pendingTop two applicants hold the field; entry window is open
HANBEAM and Peking University together account for the majority of ranked patent records, yet the absolute portfolio sizes are small enough that a focused filing campaign by a new entrant could meaningfully shift rankings within two to three years. The absence of a large incumbent with hundreds of families reduces the barrier to achieving visible standing. Organizations with existing GaN process know-how are best positioned to exploit this window.
High concentration, low volumeOne documented co-filing between National Sun Yat-sen University and Sino American Silicon Products
The only observed co-applicant relationship links National Sun Yat-sen University and Sino American Silicon Products Inc., reflecting a university-industry collaboration on wafer substrate technology. This pairing is consistent with the academic-to-commercialization pathway common in compound semiconductor research. The ecosystem is otherwise composed of independent filers, leaving substantial room for collaborative IP development.
Sparse ecosystemUnited States leads filings; Taiwan and PCT routes signal export intent
The United States accounts for the largest share of patent records by jurisdiction, followed by Taiwan and WIPO PCT filings, with additional records in Australia and China. The PCT filings indicate that at least some applicants are seeking broad international coverage beyond their home markets. Taiwan’s presence is consistent with the island’s established compound semiconductor manufacturing base.
US-led, multi-regionGo beyond the landscape: Eureka’s TRIZ Solution agent breaks down an R&D problem and returns patented concept solutions, each with a technical approach and cited patent & literature evidence.
| Applicant | Collaborator | Co-filings |
|---|---|---|
| National Sun Yat-sen University | Sino American Silicon Products Inc. | 1 |
Co-filing pairs, ranked by the number of jointly-filed patent families.
Assignee snapshot from the current evidence set
The applicants below are visible in this query result. Because the evidence set is relatively small, read this section as a directional snapshot rather than a full competitive ranking.
HANBEAM
HANBEAM holds 4 patent records, the highest count among ranked applicants, with technology emphasis on H01L 33 semiconductor devices — the core LED device structure class. Momentum data does not flag HANBEAM as a recent-window new entrant, suggesting its filings predate or span across the observed window. Its lead is real but not prohibitively large given the field’s overall scale.
patent records: 4Peking University
Peking University holds 3 patent records and is identified as a new entrant with all recent-window filings (trend: new entrant). Its technology focus spans both H01L 27 and H01L 33 semiconductor device classes, indicating interest in both integrated circuit-level integration and LED device architecture — a broader scope than most other applicants. As an academic institution, it may be positioning for licensing or spin-out rather than direct manufacturing.
patent records: 3Frequently asked questions
HANBEAM holds the top position with 4 patent records, ahead of Peking University with 3 patent records, based on the applicant ranking for this topic.
The top five filers account for 77% of the combined total among the ranked applicants visible in this query, indicating a highly concentrated field where a small number of organizations are visible in the visible IP landscape.
The United States leads by number of patent records, followed by Taiwan and WIPO PCT filings, with additional records in Australia and China.
Semiconductor device structures under H01L account for the visible share of classified patent records, specifically H01L 33 (LED device architectures) and H01L 27 (integrated device structures), with a marginal single record under G03B (photographic apparatus).
Yes. One co-filing relationship is documented between National Sun Yat-sen University and Sino American Silicon Products Inc., reflecting a university-industry collaboration on wafer substrate-related technology.
Recorded filings were zero from 2017 through 2021, rose to 3 in 2022, and show zero in subsequent years through 2026. Post-2022 readings are subject to publication lag and should not be interpreted as a confirmed absence of activity.
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Disclaimer. This page is generated from PatSnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
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