GaN Monolithic & Compact Integration Patent Snapshot
GaN monolithic and compact integration is a nascent but expanding field, with activity concentrated among a small cluster of academic institutes and specialist firms rather than established semiconductor majors. The United States is the primary filing jurisdiction, and H01L semiconductor device patents dominate the technology mix, reflecting early-stage foundational work on HEMT structures and GaN-silicon co-integration.
A small, concentrated field led by academic and specialist players
The Agency for Science, Technology and Research (A*STAR) and GAN Systems Inc. jointly lead the ranking, each holding 3 patent records, followed by Tianjin Polytechnic University, the Shanghai Institute of Microsystem and Information Technology, Universiti Teknologi Malaysia, The Hong Kong University of Science and Technology, and GaNpower International Inc., each with 2 patent records.
The top five filers collectively account for 46% of the ranked applicants visible in this query’ combined total, indicating moderate-to-high concentration for a corpus of this size. The tier gap between the top cluster and the broader field is narrow, as most applicants hold only a single record, meaning individual new entrants can rapidly alter the relative rankings.
| # | Applicant | Patent records | Share |
|---|---|---|---|
| 1 | AGENCY FOR SCI TECH & RES | 3 | |
| 2 | GAN Systems Inc. | 3 | |
| 3 | Tianjin Polytechnic University | 2 | |
| 4 | SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CH… | 2 | |
| 5 | Universiti Teknologi Malaysia | 2 | |
| 6 | THE HONG KONG UNIV OF SCI & TECH | 2 | |
| 7 | GaNpower International Inc. | 2 | |
| 8 | South China University of Technology | 1 | |
| 9 | Shanghai Xingyu Technology Co., Ltd. | 1 |
| # | Applicant | Patent records | Share |
|---|---|---|---|
| 10 | Qualcomm Inc. | 1 | |
| 11 | Infineon Technologies Americas Corp. | 1 | |
| 12 | STMicroelectronics International NV | 1 | |
| 13 | Jiangsu GanLin Intelligent Systems Co., Ltd. | 1 | |
| 14 | Cambridge GaN Devices Limited | 1 | |
| 15 | Peking University | 1 | |
| 16 | SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE AC… | 1 | |
| 17 | Huawei Digital Power Technologies Co., Ltd. | 1 |
The co-presence of a government research agency (A*STAR), a power-electronics specialist (GAN Systems), and multiple universities at the top signals that this space remains in a knowledge-building phase where academic and publicly funded institutions set the technical agenda alongside commercial actors.
Filings from approximately 2024 onward are likely undercounted due to standard patent publication lag; the apparent drop in recent years should not be interpreted as a slowdown in actual invention activity. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.
A 2023 filing surge anchors multi-year growth; H01L dominates the technology mix
Annual filing activity and the IPC branch distribution together reveal a field that accelerated sharply in 2023 before easing, with semiconductor device classifications accounting for the large majority of recorded patents.
Annual filing trend
Filings were minimal from 2017 through 2022 before surging to a peak of 6 records in 2023. The 2024 figure of 2 and the zero counts for 2025–2026 reflect publication lag rather than a genuine collapse in activity. On a multi-year basis the recent three-year window sits well above the prior three-year window, confirming that the field is still in a growth phase even though annual volume has eased from the 2023 peak.
↗ Hover for values · click a bar to ask EurekaTechnology composition
H01L (Semiconductor devices) accounts for 26 patent records — by far the visible branch — reflecting the field’s primary focus on HEMT structures and monolithic GaN-silicon device architectures. H03K (Pulse technique and logic circuits) is the second branch with 4 records, capturing gate-driver and switching-circuit integration work. H10W, G01N, and H10D each hold 2–3 records, representing early-stage adjacent activity in combined semiconductor functions, material characterisation, and general semiconductor device architectures.
↗ Hover for values · click a bar to ask EurekaHighly cited patent families surfaced by the query
Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.
Monolithic integration of GAN HEMT and si CMOS
A CMOS process is disclosed for manufacturing an integrated circuit including both MOSFETS and GaN HEMT devices. Each GaN HEMT device resides within an oxidized window that exposes a silicon substrate having a <111> crystal lattice orientation. (excerpt from the patent abstract)
| # | Patent | Citations |
|---|---|---|
| 1 | III-Nitride High Electron Mobility Transistor Stru… | 98 |
| 2 | Power switching systems comprising high power e-mo… | 35 |
| 3 | Monolithic integration of GAN HEMT and si CMOS | 29 |
| 4 | POWER SWITCHING SYSTEMS COMPRISING HIGH POWER E-MO… | 24 |
| 5 | GaN功率器件及其可靠性测试方法 | 13 |
| 6 | Iii-nitride high electron mobility transistor stru… | 12 |
| 7 | Monolithic integration of silicon and group III-V … | 7 |
| 8 | 衬底转移外延生长的HEMT与LED的单片集成方法及器件 | 6 |
Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.
Assignee snapshot from the current evidence set
The applicants below are visible in this query result. Because the evidence set is relatively small, read this section as a directional snapshot rather than a full competitive ranking.
Agency for Science, Technology and Research (A*STAR)
A*STAR holds 3 patent records and focuses squarely on H01L 29 semiconductor device structures, consistent with foundational HEMT and GaN epilayer integration research. As a government institute, its IP is likely available for licensing or collaborative development, making it a natural partnership target for commercial entrants. Momentum data for A*STAR is not separately broken out in the applicant-momentum evidence.
patent records: 3GAN Systems Inc.
GAN Systems Inc. also holds 3 patent records, but its technology mix spans H01L 29 semiconductor devices, H03K 17 electronic switching, and H03K 5 pulse-shaping circuits — a combination that points to integrated gate-driver and power-switching architectures rather than pure device physics. This commercial orientation differentiates GAN Systems from the academic leaders and positions it closer to end-product integration. Momentum data for GAN Systems is not separately itemised in the current evidence.
patent records: 3Frequently asked questions
The evidence covers 16 patent families in scope. This is a relatively small corpus, consistent with an early-growth field where foundational IP positions are still being established.
The Agency for Science, Technology and Research (A*STAR) and GAN Systems Inc. are co-leaders, each holding 3 patent records. They are followed by Tianjin Polytechnic University, the Shanghai Institute of Microsystem and Information Technology, Universiti Teknologi Malaysia, The Hong Kong University of Science and Technology, and GaNpower International Inc., each with 2 patent records.
H01L (Semiconductor devices) is visible with 26 patent records, reflecting the field’s foundational focus on GaN HEMT structures and monolithic GaN-silicon co-integration. H03K (Pulse technique and logic circuits) is the next-largest branch with 4 records.
The United States leads with 10 patent records, followed closely by China with 9 records. WIPO PCT applications number 4, indicating that applicants are seeking broad international coverage. Malaysia and Singapore also appear, reflecting the Southeast Asian academic presence in the applicant pool.
The field is assessed as Growth stage. The recent three-year filing window is 100% above the prior three-year window. Annual volume peaked in 2023 at 6 records and has eased since, but publication lag means recent-year counts understate true activity. The multi-year trajectory remains positive.
G01K (temperature measurement) and G01R (electrical and magnetic measurement) each hold only 1 patent record, making them the sparsest branches identified. H10W, G01N (material analysis and testing), and H10D (general semiconductor devices) each hold 2–3 records and represent other low-density adjacencies worth monitoring.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
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