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GaN-on-Si 8-Inch Manufacturing Patent Snapshot

GaN-on-Si 8-Inch Manufacturing Patent Snapshot
Evidence Snapshot
GaN-on-Si 8-Inch Manufacturing Patent Snapshot in 2026

The defined corpus for GaN-on-Si 8-inch manufacturing is extremely nascent, with only 2 patent families indexed and activity split evenly between IQE and Narvellux Tech (Shenzhen). Annual filings have plateaued near their 2019 peak, signaling that this narrowly scoped search captures an early-stage niche rather than a broad competitive field.

2
Patent families in scope
N/A
Concentration not assessed
N/A
Growth trend not assessed
China
Leading jurisdiction
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Published byPatsnap Insights Team··5 min readVerified by Patsnap Eureka data
Overview

Two applicants share all indexed activity equally

The corpus contains 2 patent families, with IQE and Narvellux Tech (Shenzhen) each holding 1 patent family — a perfectly balanced, two-player field at the top of the ranking.

The top five filers account for 100% of the ranked applicants visible in this query’ combined total, reflecting near-total concentration in a corpus this small. There is no meaningful tier gap — both applicants are co-leaders by default.

Leading applicants
#ApplicantPatent familiesShare
1IQE plc1
2Narvellux Tech (Shenzhen) Co., Ltd.1
↗ Hover a row · click a company to ask Eureka

China-based third-generation semiconductor firm suggests that patent activity in this precise topic is emerging from two distinct geographic and strategic angles simultaneously.

Patent publication lags of 18–24 months mean filings from 2024 onward are likely under-represented; the corpus size should be interpreted cautiously as a snapshot rather than a definitive measure of competitive intensity.

Source: Patsnap Eureka. Chart shows the top applicants ranked by patent families. Applicant counts can overlap where a patent family lists several applicants, so they need not sum to the total in scope. This same dataset is now available on Patsnap Open Platform via MCP.Connect via MCP →
Trends & Structure

Isolated filing spikes and a semiconductor-dominant technology mix

The annual filing trend and technology composition charts together reveal a field with minimal sustained activity and a technology focus concentrated in semiconductor device classifications.

Annual filing trend

A single filing appeared in 2019 and another in 2022, with no activity recorded in surrounding years. This sparse, non-consecutive pattern is consistent with a very early-stage or narrowly defined topic rather than an established filing wave. The most recent years (2024–2026) should be treated as under-counted due to publication lag.

Annual filing trendAnnual values from 2017 to 2026, peaking at 1 in 2019.02017020181201902020020211202202023020240202502026↗ Hover for values · click a bar to ask Eureka

Technology composition

H01L (Semiconductor devices) covers both families, confirming that device-level integration — rather than process equipment or materials handling — is the primary patent focus. H01S (Lasers and stimulated emission) and H10D (Semiconductor devices, general) each appear once, indicating secondary interest in optoelectronic and general device structures.

Technology compositionH01L · Semiconductor devices leads with 2; H01S · Lasers & stimulated emission 1.H01L · Semiconductor dev…2H01S · Lasers & stimulat…1H10D · Semiconductor dev…1↗ Hover for values · click a bar to ask Eureka
Source: Patsnap Eureka. Technology-branch counts are measured in patent records; a single patent family can carry several IPC classes, so class totals can exceed the family total in scope.Explore deeper in Eureka →
Key Patents

Highly cited patent families surfaced by the query

Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.

Featured patent
US20230097643A1Published 2023-03-30

Stress Management Layer for GaN HEMT

Iqe PLC

A high electron mobility transistor comprising a nucleation layer having a first lattice constant, a back-barrier layer having a second lattice constant and a stress management layer having a third lattice constant which is larger than both first and second lattice constants. The stress management layer compensates some or all of the stress due to the… (excerpt from the patent abstract)

Stress Management Layer for GaN HEMT — patent drawingStress Management Layer for GaN HEMT — patent drawing
Representative drawings from the patent document.
Open this patent in Eureka →
Highly cited patent families surfaced by this query
#PatentCitations
1一种GaN基激光器和AlGaN/GaN HEMT集成器件制备方法6
2Stress Management Layer for GaN HEMT2

Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.

Source: Patsnap Eureka. Citation-ranked patent families surfaced by this query.Open in Eureka →
Visible assignees

Assignee snapshot from the current evidence set

The applicants below are visible in this query result. Because the evidence set is relatively small, read this section as a directional snapshot rather than a full competitive ranking.

Leader · IQE

IQE

IQE holds 1 patent family, focused on H01L 29 (semiconductor devices), H10D 30, and H10D 62 (general semiconductor device structures). Their momentum is flagged as a new entrant in the recent filing window, suggesting this is an early-stage position in the 8-inch GaN-on-Si space for a company otherwise well established in compound semiconductor epitaxy.

patent families: 1
Challenger · Narvellux Tech (Shenzhen)

Narvellux Tech (Shenzhen)

Narvellux Tech (Shenzhen) — operating under the Shenzhen Research Institute for Third-Generation Semiconductors identity in the technology focus data — holds 1 patent family spanning H01L 27, H01L 29, and H01S 5, indicating a broader device-integration approach that includes laser and stimulated-emission structures alongside standard transistor device work.

patent families: 1
🔍
More assignee evidence is available in Eureka
Use Eureka to validate whether these visible assignees remain central after refining the query scope and adding related patent classes.
IQENarvellux Tech (Shenzhen)+ more
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Source: Patsnap Eureka. Assignee evidence is drawn from the current PatSnap Eureka query. In small evidence sets, applicant counts should be treated as directional signals, not a complete competitive ranking.Explore players →
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Frequently asked questions

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This report’s underlying patent dataset — filings, assignees, technology clusters — is open for developers via MCP and REST API. Free to start, 10,000 credits, no credit card required.

Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.

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