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GaN Power Devices Patent Landscape 2026

GaN Power Devices Patent Landscape 2026
Competitive Landscape

GaN Power Devices Patent Landscape in 2026

Wolfspeed leads a moderately concentrated field of 8,807 patent families, holding a clear margin over the next tier of university and industrial challengers. Annual filing volume peaked in 2021 and has since plateaued, signalling a mature but still broadly active technology arena.

8,807
Patent families in scope
24%
Top-5 share of top-100 filers
-1%
3-yr filing growth (lag-adj.)
China
Leading jurisdiction
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Published byPatSnap Insights Team··7 min readVerified by PatSnap Eureka data
Overview

Wolfspeed leads; the field is moderately concentrated across a deep challenger tier

Wolfspeed holds the top position with 855 patent families, nearly double the second-ranked applicant, Xidian University at 401 patent families. The top five filers together account for 24% of the hundred largest filers’ combined total, indicating a clear leader but not a monopolistic structure.

Below Wolfspeed a dense second tier spans Infineon Tech Austria (336), Intel (297), Fujitsu (287), and Murata (287), followed by a broad third tier that includes defence primes, fabless specialists, Chinese research universities, and IDMs. This multi-tier structure means no single challenger poses an immediate threat to the leader’s position, but competitive pressure is diffuse.

Leading applicants
#ApplicantPatent familiesShare
1Wolfspeed Inc855
2Xidian University401
3Infineon Technologies Austria AG336
4Intel Corporation297
5Fujitsu Limited287
6Murata Manufacturing Co., Ltd.287
7Raytheon Company261
8Texas Instruments Incorporated233
9Mitsubishi Electric Corporation229
10MACOM Technology Solutions Holdings Inc212
#ApplicantPatent familiesShare
11Taiwan Semiconductor Manufacturing Co., Ltd.198
12Efficient Power Conversion Corporation193
13UNIV OF ELECTRONICS SCI & TECH OF CHINA184
14HRL Laboratories LLC171
15Infineon Technologies Americas Corp.153
16NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP …151
17Huawei Technologies Co., Ltd.150
18Navitas Semiconductor Limited141
19pSemi Corporation132
20NXP USA Inc.131
↗ Hover a row · click a company to ask Eureka

Wolfspeed’s lead reflects deep device-level IP (H01L 29 and H01L 21 sub-classes dominate its portfolio), consistent with its position as a pure-play wide-bandgap foundry. Challengers such as Infineon Tech Austria and pSemi (Psemi Corp) are building complementary power-conversion circuit IP alongside device patents, suggesting integration strategies that could erode Wolfspeed’s system-level relevance over time.

Filing counts for 20242026 are structurally under-counted due to the standard 18-month publication lag; any apparent decline in those years should not be read as a real reduction in R&D activity. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.

Source: PatSnap Eureka. Chart shows the top applicants ranked by patent families. Applicant counts can overlap where a patent family lists several applicants, so they need not sum to the total in scope.Explore deeper in Eureka →
Trends & Structure

Filing volume has plateaued near its 2021 peak; device IP dominates but power-circuit branches are growing

The annual trend and technology-composition charts together reveal a field that has reached volume maturity at the device level while diversifying into system and circuit sub-classes.

Annual filing trend

Filings rose from 843 in 2017, accelerated through 2019–2020, and peaked at 1,313 in 2021. Volume has eased since — 1,221 in 2022, 1,161 in 2023, 1,003 in 2024 — consistent with the maturity assessment. The 2025 and 2026 bars are heavily truncated by publication lag and should not be interpreted as a continuing decline.

Annual filing trendAnnual values from 2017 to 2026, peaking at 1,313 in 2021.8432017763201899820191,10120201,31320211,22120221,16120231,00320243622025422026↗ Hover for values · click a bar to ask Eureka

Technology composition

H01L (Semiconductor devices) dominates the composition, as expected for a device-centric field. H02M (Power conversion) is the second-largest branch, reflecting growing interest in GaN-based converter topologies. H03K (Pulse technique and logic circuits) and H03F (Amplifiers) occupy smaller but meaningful shares, pointing to RF and gate-driver applications beyond core power switching.

Technology compositionH01L · Semiconductor devices leads with 11,449; H02M · Power conversion (AC/DC etc.) 3,015.H01L · Semiconductor dev…11,449H02M · Power conversion …3,015H03K · Pulse technique &…884H10D · Semiconductor dev…608H03F · Amplifiers330H02J · Power supply & gr…292C30B · Crystal growth286H10N · Other electric so…221↗ Hover for values · click a bar to ask Eureka
Source: PatSnap Eureka. Technology-branch counts are measured in patent records; a single patent family can carry several IPC classes, so class totals can exceed the family total in scope.Explore deeper in Eureka →
Key Patents

Highly cited patent families surfaced by the query

Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.

Featured patent
US20230093515A1Published 2023-03-23

Synchronous buck converter using a single gate dri…

National Yang Ming Chiao Tung University

A synchronous buck converter using a single gate drive control is provided and includes a drive circuit, a p-type gallium nitride (p-GaN) transistor switch module and an inductor. A gallium nitride power transistor is used as an upper side transistor switch, and a PMOS power transistor is used as a lower side transistor switch in the p-GaN transistor switch… (excerpt from the patent abstract)

Synchronous buck converter using a single gate dri… — patent drawingSynchronous buck converter using a single gate dri… — patent drawing
Representative drawings from the patent document.
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Highly cited patent families surfaced by this query
#PatentCitations
1Nitride based transistors on semi-insulating silic…885
2Aluminum gallium nitride/gallium nitride high elec…560
3Advanced Heterojunction Devices and Methods of Man…556
4Insulating gate AlGaN/GaN HEMT541
5Group III nitride based FETs and HEMTs with reduce…509
6Diamond on iii-nitride device474
7Printable semiconductor structures and related met…460
8Controlled buckling structures in semiconductor in…448

Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.

Source: PatSnap Eureka. Citation-ranked patent families surfaced by this query.Open in Eureka →
Insights

What the patent structure means for GaN power device R&D strategy

The combination of a maturing filing curve, a clear leader, active academia-industry co-filing, and broad geographic coverage shapes where incremental and disruptive opportunities remain.

Maturity

Field is at maturity — annual volume has eased from its 2021 peak

The lifecycle stage is assessed as Maturity, with annual filings plateauing near their 2021 peak of 1,313. This signals that core device architectures (HEMT, enhancement-mode, lateral structures) are heavily patented and that white space is shifting toward adjacent system-level and manufacturing sub-classes. New entrants face a densely mapped device IP landscape and should assess freedom-to-operate carefully before committing to standard device topologies.

Lifecycle: Maturity
Concentration

One dominant leader, but a deep and diverse challenger tier keeps the field competitive

Wolfspeed’s 855-family portfolio is more than twice that of the second-ranked applicant. However, the top five filers hold only 24% of the hundred largest filers’ combined total, meaning the remainder of the ranking is spread across industrial incumbents, defence contractors, fabless companies, and Chinese research universities. This structure rewards both broad portfolio strategies (IDMs, foundries) and specialist positions (RF amplifiers, gate drivers, crystal growth).

Moderate concentration
Collaboration

Co-filing ties are strongest between Wolfspeed and UC Regents, and within Chinese university ecosystems

The most active co-filing pair is Wolfspeed and the Regents of the University of California, with 53 jointly filed patent families — the largest single collaboration in the dataset. Texas Instruments and its Japanese subsidiary share 39 families. Xidian University co-files extensively with its Guangzhou Research Institute (28 families) and Wuhu Research Institute (5 families), reflecting a hub-and-spoke model common in Chinese university IP strategy. Mitsubishi Electric and its European R&D centre account for 3 collaborative families.

Industry–academia ties
Geography

China and the US are near-parity lead jurisdictions; PCT and EPO cover multi-regional bets

China leads in patent records filed, followed closely by the United States. WIPO PCT and Europe (EPO) are the primary vehicles for multi-jurisdictional protection. Japan and Taiwan round out the top five, reflecting the concentration of GaN substrate, foundry, and device manufacturing in the Asia-Pacific region. Secondary jurisdictions — Germany, Austria, India, Canada — indicate selective validation for high-value industrial and automotive markets.

CN · US · PCT · EP · JP
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Top collaboration links
ApplicantCollaboratorCo-filings
Wolfspeed IncRegents of the University of California53
Texas Instruments IncorporatedTexas Instruments Japan Limited39
Fujitsu LimitedFujitsu Semiconductor Limited29
Xidian UniversityXidian University Guangzhou Research Institute28
University of Electronic Science and Technology of ChinaUESTC Guangdong Institute of Electronic Information Engineering13
Xidian UniversityXidian University Wuhu Research Institute5
Xidian UniversityBeijing Times Minxin Technology Co., Ltd.4
Xidian UniversityBeijing Microelectronics Technology Institute4
Xidian UniversityZTE Corporation3
Mitsubishi Electric CorporationMitsubishi Electric R&D Centre Europe B.V.3

Co-filing pairs, ranked by the number of jointly-filed patent families.

Source: PatSnap Eureka. Insights are derived from applicant ranking, collaboration pairs, jurisdiction filing counts, and lifecycle analysis.Explore insights →
Leaders

Wolfspeed anchors device IP; Infineon Tech Austria is the fastest-rising industrial challenger

The top two players illustrate contrasting strategies: a pure-play wide-bandgap incumbent deepening its device portfolio, versus a power-semiconductor incumbent accelerating into GaN with strong circuit-level IP alongside device patents.

Leader · Wolfspeed

Wolfspeed Inc

Wolfspeed holds 855 patent families, concentrated in semiconductor device sub-classes H01L 29 and H01L 21, consistent with its foundry and epitaxy-focused strategy. Recent momentum shows a decline of 32% in the latest period versus the prior window, suggesting the portfolio is maturing rather than expanding rapidly — reinforcing the field-level lifecycle read.

families: 855
Challenger · Infineon Tech Austria

Infineon Technologies Austria AG

Infineon Tech Austria ranks third overall with 336 patent families and shows the strongest recent momentum among major incumbents at +140% versus the prior period. Its technology emphasis spans H01L 29 (device structures), H02M 1 (power conversion front-end), and H01L 21 (fabrication processes), indicating a deliberate push to couple GaN device IP with converter circuit IP — a differentiated position relative to Wolfspeed’s device-only focus.

families: 336
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Access ranked profiles, technology emphasis, and filing trajectories for all top 100 GaN power device filers.
Xidian UniversityIntel Corporation+ more
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Leading-applicant momentum (recent 3 yrs, lag-adjusted)
ApplicantRecent (3 yrs)Trend
Wolfspeed Inc65▼ -32%
Xidian University126▼ -9%
Fujitsu Limited4▲ new entrant
Infineon Technologies Austria AG72▲ +140%
Intel Corporation25▼ -65%
pSemi Corporation90▼ -22%
Raytheon Company17▼ -82%
Texas Instruments Incorporated50▼ -47%
Source: PatSnap Eureka. Family counts are from the applicant ranking; momentum reflects recent versus prior three-year filing volumes.Explore players →
Adjacent Branches

Under-served branches in pulse/logic circuits, amplifiers, power supply systems, and crystal growth

Five IPC branches adjacent to the dominant H01L class carry relatively small shares of current activity. Each represents a combination of lower filing density and plausible technical relevance to GaN power device development.

H03K · Pulse technique and logic circuits

This branch accounts for a 5% share among the adjacent classes analysed, covering gate-driver ICs, switching waveform control, and dead-time logic — all critical to realising GaN’s fast-switching advantage in practical converters. The relatively low density compared to H01L suggests that circuit-level implementation IP for GaN gate drives is less mature than device IP, offering a plausible entry point for fabless or IDM players with circuit design capability.

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C30B · Crystal growth

Crystal growth (C30B) carries only a 1% share in the adjacent branch set, despite substrate quality being a primary determinant of GaN device performance and yield. This sparsity is an observation that substrate and bulk crystal IP is concentrated in a small number of specialised filers; it may reflect either high tacit-knowledge barriers or underutilised IP protection for process innovations in GaN-on-SiC and GaN-on-Si epitaxy. Players with proprietary growth processes could find room to formalise and protect those methods.

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H03F · AmplifiersH02J · Power supply and grid systems+ more
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Source: PatSnap Eureka. Branch share figures reflect each branch’s proportion within the set of lower-density adjacent classes identified, not a share of all families in scope.Explore emerging →
Route Matrix

How leading GaN filers differ by technology sub-class emphasis

Strength of each leader across the main technology routes.

PlayerH01L 29 · Semiconductor devicesH01L 21 · Semiconductor devicesH02M 1 · Power conversion (AC/DC etc.)H01L 23 · Semiconductor devicesH01L 27 · Semiconductor devices
Wolfspeed IncStrong · 802Strong · 588AbsentEmerging · 121Emerging · 65
Xidian UniversityStrong · 406Strong · 419AbsentEmerging · 63Emerging · 36
Intel CorporationStrong · 269Strong · 185AbsentEmerging · 42Moderate · 88
Fujitsu LimitedStrong · 301Strong · 250AbsentAbsentAbsent
Raytheon CompanyStrong · 207Strong · 152AbsentEmerging · 39Moderate · 45
Taiwan Semiconductor Manufacturing Co., Ltd.Strong · 147Strong · 106AbsentModerate · 36Moderate · 51
Infineon Technologies Austria AGAbsentStrong · 110Strong · 111Moderate · 50Moderate · 41
Source: PatSnap Eureka. Matrix values are measured in patent records and should not be compared directly with family-level applicant totals.Compare in Eureka →
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Disclaimer. This page is generated from PatSnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

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