GaN Power Module Monolithic Integration Patent Snapshot
The patent corpus for GaN power module monolithic integration is extremely small, with only 2 patent families in scope and activity concentrated among three applicants spanning automotive, academic, and university filers. Filing activity peaked in 2020 and has since eased, signalling that this precise intersection of GaN integration and power module design remains a nascent and largely unsettled technical space.
Three applicants share a minimally populated field
Hella GmbH & Co. KGaA, Zhejiang University, and SR University each hold 1 patent record, making the field entirely flat in terms of applicant hierarchy — no single organization has established a clear quantitative lead.
The top five filers account for 100% of the top ranked applicants visible in this query’ combined total, reflecting the extremely concentrated and underdeveloped nature of this intersection. There is effectively no second tier: all ranked applicants are tied.
| # | Applicant | Patent records | Share |
|---|---|---|---|
| 1 | HELLA GMBH & CO KGAA | 1 | |
| 2 | Zhejiang University | 1 | |
| 3 | SR University | 1 |
The presence of an automotive supplier (Hella), a leading Chinese research university (Zhejiang University), and an Indian institution (SR University) suggests that interest is geographically and institutionally diverse, but none has yet built a defensible portfolio depth in this specific sub-field.
The corpus covers only 2 patent families; findings should be treated as indicative of very early-stage or highly targeted activity rather than a mature competitive field. Publication lag means any filings from 2024–2025 onward may not yet be fully visible.
Activity peaked in 2020 and the technology mix skews toward semiconductor device classification
Two charts capture the temporal and technical shape of this corpus: an annual filing trend revealing a single-year pulse and a technology composition breakdown showing which IPC branches appear across the records.
Annual filing trend
A single filing appeared in 2020 and another in 2025, with all other years recording zero activity. The 2025 data point should be treated cautiously given publication lag; the lifecycle evidence indicates the field peaked in 2020 and annual volume has since eased. This is not a steadily active field but rather one with isolated contributions.
↗ Hover for values · click a bar to ask EurekaTechnology composition
H01L (semiconductor devices) is the visible IPC branch with 3 records, followed by H02M (power conversion) and H03K (pulse technique and logic circuits) with 2 records each. Smaller representation appears in G06F (digital data processing), H03B (oscillation generation), and H10D (semiconductor devices, general). The spread across multiple branches reflects the cross-disciplinary nature of monolithic GaN integration, which touches device physics, circuit design, and power electronics simultaneously.
↗ Hover for values · click a bar to ask EurekaHighly cited patent families surfaced by the query
Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.
Gate drive circuit for power conversion apparatus
An apparatus includes a gate drive circuit and a GaN HEMT switch where the gate drive circuit has a gate drive output to produce a gate drive signal in response to a gate control signal. The switch has a gate connected to the gate drive circuit through a gate drive resistor. The gate drive circuit includes a NPN (or NMOS) turn-on transistor and a PNP (or… (excerpt from the patent abstract)
| # | Patent | Citations |
|---|---|---|
| 1 | 一种用于GaN HEMT功率器件的驱动控制芯片 | 23 |
| 2 | Gate drive circuit for power conversion apparatus | 6 |
Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.
Assignee snapshot from the current evidence set
The applicants below are visible in this query result. Because the evidence set is relatively small, read this section as a directional snapshot rather than a full competitive ranking.
Hella GmbH & Co. KGaA
Hella’s single record spans H01L 27 (integrated semiconductor devices), H01L 29 (semiconductor device structures), and H02M 3 (DC power conversion) — a combination consistent with an automotive power module application targeting monolithic GaN integration for DC-DC conversion. As an automotive tier-1 supplier, Hella’s entry into this classification suggests application-driven rather than fundamental-device motivation. Momentum data is not available from current evidence.
patent records: 1Zhejiang University
Zhejiang University’s record spans H01L 29 (semiconductor device structures), H02M 1 (general power conversion), and H03K 17 (electronic switches and logic) — a mix pointing toward gate-driver and switching-circuit research alongside device physics. This academic profile suggests foundational work on GaN HEMT behavior in integrated circuits rather than application-level packaging. Momentum data is not available from current evidence.
patent records: 1Frequently asked questions
The current evidence covers 2 patent families in scope. This is an extremely small corpus, indicating that the specific intersection of GaN power modules and monolithic integration is a narrowly defined and underfiled sub-field.
Hella GmbH & Co. KGaA, Zhejiang University, and SR University each hold 1 patent record. There is no applicant with a larger portfolio — the field is entirely flat in terms of ranking.
Activity has been sparse and pulse-like: one filing recorded in 2020 and one in 2025, with zero filings in all other years surveyed. The lifecycle evidence classifies the field as Decline, with annual volume easing from the 2020 peak. The 2025 data point is subject to publication lag.
H01L (semiconductor devices) leads with 3 records, followed by H02M (power conversion) and H03K (pulse technique and logic circuits) with 2 records each. G06F, H03B, and H10D each appear once.
China, India, and the United States each have 1 patent record. No European, Japanese, or Korean jurisdiction filings appear in the current evidence, representing a geographic gap relative to the global GaN power electronics market.
No co-applicant relationships are detected in the current evidence. The absence of joint filings is consistent with the very small corpus and suggests no formal cross-institutional research partnerships have filed under this specific classification.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
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