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Gate-All-Around Transistor Patent Landscape 2026

Gate-All-Around Transistor Patent Landscape 2026
Competitive Landscape

Gate-All-Around Transistors Patent Landscape in 2026

The gate-all-around transistor space is highly concentrated, with TSMC alone commanding a dominant share of the top-hundred filers’ combined activity, followed by Intel, IBM, and Samsung at a considerable distance. The field is still expanding on a multi-year basis, though annual filing volume has eased from its 2022 peak and the most recent years remain understated by publication lag.

17,162
Patent families in scope
72%
Top-5 share of top-100 filers
+32%
3-yr filing growth (lag-adj.)
United States
Leading jurisdiction
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Published byPatSnap Insights Team··8 min readVerified by PatSnap Eureka data
Overview

TSMC leads an extremely concentrated field; four foundry and IDM incumbents hold the high ground

Taiwan Semiconductor Manufacturing Co. (TSMC) ranks first by a wide margin, followed by Intel, IBM, and Samsung Electronics—a four-player group that together accounts for the bulk of activity among the hundred largest filers. TSMC’s lead over the second-ranked player is more than fivefold, signaling a structural dominance uncommon even in mature semiconductor sub-fields.

The top five filers collectively hold 72% of the hundred largest filers’ combined patent records. The gap between the fifth-ranked applicant (Applied Materials) and the first is large enough that new entrants or challengers would need sustained, decade-scale programs to close it on volume alone.

Leading applicants
#ApplicantPatent recordsShare
1Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)14,783
2Intel Corporation2,747
3International Business Machines Corporation (IBM)2,292
4Samsung Electronics Co., Ltd.2,150
5Applied Materials, Inc.618
6Semiconductor Manufacturing International (Shanghai) Corporation603
7Qualcomm Incorporated571
8GlobalFoundries US Inc.547
9Tokyo Electron Limited474
10Semiconductor Manufacturing International (Beijing) Corporation430
#ApplicantPatent recordsShare
11Interuniversity Microelectronics Centre (imec)369
12Monolithic 3D Inc.339
13Changxin Memory Technologies, Inc.332
14Unisantis Electronics Singapore Pte. Ltd.255
15Macronix International Co., Ltd.245
16Institute of Microelectronics, Chinese Academy of Sciences242
17National Taiwan University183
18Socionext Inc.165
19ASM IP Holding B.V.153
20Huawei Technologies Co., Ltd.150
↗ Hover a row · click a company to ask Eureka

TSMC’s position, combined with its +40% recent-period momentum, suggests the leader is actively widening its moat rather than coasting. Intel’s +81% and Samsung’s +86% recent-period surges indicate that the two closest integrated-device manufacturer challengers are accelerating, making the competitive gap more dynamic than static portfolio sizes alone imply.

The most recent 18–24 months of filings are systematically under-counted due to publication lag; apparent softness in 20242025 data should not be read as a genuine slowdown. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.

Source: PatSnap Eureka. Chart shows the top applicants ranked by patent records; the corpus total is measured in patent families. These figures use different units and should not be compared directly.Explore deeper in Eureka →
Trends & Structure

Multi-year growth continues from a 2022 peak; semiconductor device patents dominate the technology mix

Two lenses frame the field’s trajectory: an annual filing trend that peaked in 2022 and has since eased (with recent years further suppressed by publication lag), and a technology composition overwhelmingly anchored in core semiconductor device classes with a set of smaller adjacent branches that warrant attention.

Annual filing trend

Filings grew steadily from 2017 through a 2022 peak, then moderated in 2023–2024; 2025–2026 counts are near-zero due to publication lag and should not be interpreted as activity levels. The 32% recent-window growth confirms the field is still expanding on a multi-year basis despite the annual-volume easing.

Annual filing trendAnnual values from 2017 to 2026, peaking at 3,210 in 2022.95720171,13520181,56920192,01820202,73320213,21020222,76920232,3712024398202522026↗ Hover for values · click a bar to ask Eureka

Technology composition

H01L (Semiconductor devices) dominates by a wide margin, reflecting the core device-physics and fabrication focus of GAA work. H10B (Memory device manufacture), H10D (Semiconductor devices, general), and B82Y (Nanotechnology applications) form a secondary tier, pointing to active memory integration and nanowire/nanosheet research threads.

Technology compositionH01L · Semiconductor devices leads with 19,994; H10B · Memory device manufacture 2,413.H01L · Semiconductor dev…19,994H10B · Memory device man…2,413H10D · Semiconductor dev…1,754B82Y · Nanotechnology ap…973G11C · Static & digital …808H10N · Other electric so…498G06F · Electric digital …226C23C · Coating & surface…146↗ Hover for values · click a bar to ask Eureka
Source: PatSnap Eureka. Technology-branch counts are measured in patent records; a single patent family can carry several IPC classes, so class totals can exceed the family total in scope.Explore deeper in Eureka →
Key Patents

Highly cited patent families surfaced by the query

Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.

Featured patent
US20210384227A1Published 2021-12-09

Gate-all-around (GAA) transistor with insulator on…

Qualcomm Incorporated

A gate-all-around (GAA) transistor has an insulator on a substrate. The GAA transistor also may have different crystalline structures for P-type work material and N-type work material. The GAA transistor includes one or more channels positioned between a source region and a drain region. The one or more channels, which may be nanowire, nanosheet, or… (excerpt from the patent abstract)

Gate-all-around (GAA) transistor with insulator on… — patent drawingGate-all-around (GAA) transistor with insulator on… — patent drawing
Representative drawings from the patent document.
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Highly cited patent families surfaced by this query
#PatentCitations
1Method of cutting metal gate3,247
2FINFETs with wrap-around silicide and method formi…1,368
3Apparatus and method for forming semiconductor con…1,322
4Contact resistance reduced p-MOS transistors emplo…888
5Self-aligned wrapped-around structure822
6Aligned gate-all-around structure789
7Nanowire field effect transistor device having a r…788
8Strained nanowire CMOS device and method of forming585

Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.

Source: PatSnap Eureka. Citation-ranked patent families surfaced by this query.Open in Eureka →
Insights

What the patent structure means for R&D investment decisions

The combination of a Growth lifecycle stage, extreme top-tier concentration, and active cross-institution collaboration shapes both the risk profile and the entry calculus for teams evaluating GAA investments.

Growth

Growth stage: multi-year expansion, annual volume easing from 2022 peak

The field is classified as Growth, with the recent three-year filing window sitting well above the prior three-year window. Annual volume has eased from its 2022 peak, consistent with the most advanced process nodes (3 nm and below) moving from research into volume production, which typically compresses purely exploratory patent activity. The publication-lag effect on 2024–2025 data means the true current pace is higher than raw counts suggest.

Lifecycle: Growth
Concentration

72% top-5 share signals a fortress market; challenger acceleration is the key variable

The top five filers hold 72% of the hundred largest filers’ combined patent records, a concentration level that creates high barriers for new entrants on volume alone. However, Intel’s +81% and Samsung’s +86% recent-period momentum show that even well-resourced incumbents are investing aggressively to close the gap with TSMC, suggesting the competitive order at the top tier may shift over the next filing cycle. Smaller players such as Applied Materials (+187%) are building positions in process-equipment adjacencies.

High concentration
Collaboration

IBM is the most networked co-filer; TSMC anchors two key academic partnerships

IBM is the most active co-applicant hub, with documented co-filing relationships with IBM United Kingdom, IBM China, GlobalFoundries, STMicroelectronics, and the French CEA (Commissariat à l’Énergie Atomique), each relationship involving 18–54 joint records. TSMC co-files with National Taiwan University (140 joint records) and National Yang Ming Chiao Tung University (25 joint records), anchoring Taiwan’s academic-industry pipeline. Tokyo Electron and its US holding entity also appear as a paired co-filer (54 joint records).

Ecosystem partnerships
Geography

US filing dominance is near-total; EPO and PCT entries are a fraction of US volume

The United States is the primary filing jurisdiction by a large margin. Europe (EPO) and WIPO (PCT) represent much smaller shares, and country-level entries for Singapore, the UK, Australia, and others are sparse. This concentration in the US patent system reflects both the location of key R&D centers and a deliberate litigation-risk strategy; teams seeking freedom-to-operate in Asian fabs or European supply chains should note that patent density outside the US is considerably lower.

US-centric filing
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Top collaboration links
ApplicantCollaboratorCo-filings
Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)National Taiwan University140
International Business Machines Corporation (IBM)IBM United Kingdom Limited54
Tokyo Electron LimitedTokyo Electron US Holdings Inc.54
International Business Machines Corporation (IBM)IBM China Co., Ltd.47
International Business Machines Corporation (IBM)GlobalFoundries Inc.37
Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)National Yang Ming Chiao Tung University25
International Business Machines Corporation (IBM)Commissariat à l’Énergie Atomique et aux Énergies Alternatives (CEA)25
International Business Machines Corporation (IBM)IBM Deutschland GmbH25
International Business Machines Corporation (IBM)STMicroelectronics, Inc.24
GlobalFoundries Inc.STMicroelectronics, Inc.18

Co-filing pairs, ranked by the number of jointly-filed patent families.

Source: PatSnap Eureka. Insight cards are grounded in lifecycle, collaboration, jurisdiction, and momentum evidence.Explore insights →
Leaders

TSMC sets the pace; Intel and Samsung are the fastest-accelerating challengers

All leading players concentrate their filings in core H01L semiconductor device subclasses, but differ meaningfully in trajectory and secondary focus—Monolithic 3D, for instance, shows a distinct lean toward memory-integration classes alongside standard device subclasses.

Leader · TSMC

Taiwan Semiconductor Manufacturing Co.

TSMC holds 14,783 patent records, more than five times the second-ranked filer, with filings concentrated entirely in H01L semiconductor device subclasses (device structure, fabrication process, and integrated circuits). Its recent-period filing rate is up +40% versus the prior window, indicating the leader is actively extending its position rather than maintaining a static portfolio. The TSMC–National Taiwan University collaboration (140 joint records) adds an academic research pipeline to its industrial scale.

patent records: 14,783
Challenger · Intel

Intel Corporation

Intel ranks second with 2,747 patent records and shows the strongest absolute acceleration among the major IDMs, with a +81% recent-period trend. Its technology focus mirrors TSMC’s across H01L device and fabrication subclasses, reflecting Intel’s own transition to GAA (Intel 20A/18A process nodes). Samsung Electronics, ranked fourth at 2,150 patent records and up +86% recently, is the other fast-moving challenger, making the second and fourth positions the most dynamic in the current cycle.

patent records: 2,747
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IBM (International Business Machines Corporation)Applied Materials Inc.+ more
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Leading-applicant momentum (recent 3 yrs, lag-adjusted)
ApplicantRecent (3 yrs)Trend
Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)4,577▲ +40%
International Business Machines Corporation (IBM)571▼ -28%
Intel Corporation920▲ +81%
Samsung Electronics Co., Ltd.751▲ +86%
Applied Materials, Inc.250▲ +187%
Qualcomm Incorporated149▲ +64%
Tokyo Electron Limited117▼ -34%
Monolithic 3D Inc.121▲ +39%
Source: PatSnap Eureka. Player cards cite patent record counts from the top-100 applicant ranking.Explore players →
Adjacent Branches

Under-served branches where GAA intersects memory, nanotechnology, and digital systems

Several IPC classes adjacent to the dominant H01L core show relatively low filing share despite plausible technical connections to GAA transistor architectures; these represent observations of relative sparsity rather than validated opportunities, but each has a traceable engineering rationale.

H10D · Semiconductor devices (general)

H10D holds a 6% share of records in scope despite being a direct peer class to H01L for general semiconductor device coverage. As the IPC reorganization progressively migrates device claims from H01L into H10D, this branch is likely to absorb more GAA-specific disclosures going forward. Teams filing or searching under legacy H01L classifications may be missing or under-protecting claims that map more naturally to H10D, creating a near-term classification arbitrage worth monitoring.

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G11C · Static & digital memories

G11C (Static and digital memories) accounts for a 3% share, despite the active industry push to integrate GAA nanosheet transistors into SRAM and emerging non-volatile memory cells. Monolithic 3D’s H10B memory-class activity suggests at least one player is pursuing this integration angle, but the G11C branch itself remains sparse. An entrant with a GAA-specific memory-cell architecture and process integration claims could find less crowded prior art in this intersection.

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See all adjacent IPC branches, filing density heatmaps, and applicant presence for the complete white-space analysis.
B82Y · Nanotechnology applicationsH10N · Other electric solid-state devices+ more
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Source: PatSnap Eureka. Adjacent branch shares are computed at the patent-record level across the corpus in scope.Explore emerging →
Route Matrix

How leading applicants differ by technology subclass emphasis

Strength of each leader across the main technology routes.

PlayerH01L 29 · Semiconductor devicesH01L 21 · Semiconductor devicesH01L 27 · Semiconductor devicesH01L 23 · Semiconductor devicesH10D 30 · Semiconductor devices (general)
Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)Strong · 7,454Strong · 7,286Strong · 4,459Emerging · 1,435Emerging · 788
International Business Machines Corporation (IBM)Strong · 2,099Strong · 1,742Strong · 1,131Emerging · 302Emerging · 123
Intel CorporationStrong · 1,992Strong · 1,537Strong · 1,217Moderate · 458Emerging · 145
Samsung Electronics Co., Ltd.Strong · 1,136Strong · 737Strong · 861Moderate · 304Emerging · 57
Monolithic 3D Inc.Strong · 243Strong · 217Strong · 266Strong · 186Emerging · 23
Qualcomm IncorporatedStrong · 272Strong · 241Strong · 236Moderate · 63Emerging · 18
Tokyo Electron LimitedStrong · 232Strong · 255Strong · 212Emerging · 51Emerging · 25
Source: PatSnap Eureka. Matrix values are measured in patent records and should not be compared directly with family-level applicant totals.Compare in Eureka →
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Disclaimer. This page is generated from PatSnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. PatSnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.

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