https://www.patsnap.com/resources/blog/rd-blog/high-aspect-ratio-etch-profile-control-patent-landscape/ · Patsnap · data cut-off 2026-07-31 · downloaded from the live page
Semiconductors · Patent Landscape
High Aspect Ratio Etch Profile Control Patents
  • Concentrated at the top. The five leading filers together hold 61.6% of all 284 records in scope, and the top ten hold 81.7% — a narrow group controls most of the documented claim space.
  • Filing has cooled since 2019. Activity peaked at 17 filings in 2019 and sat at 16 by the 2022 midpoint; the leading assignees each show 0 filings in the latest tracked year, though publication lag means the newest year is always undercounted.
  • H01L dominates, but H10P and H10B carry real weight. 77.5% of records sit in core semiconductor-device class H01L, while memory-device manufacture (H10B, 19.0%) and the H10P grouping (26.8%) mark where profile-control claims concentrate outside the headline class.
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284
Published Records
62%
Top-5 Share of All Records
+8%
Filing Growth 2021→2024
US
Leading Jurisdiction

Filing growth compares 2021 (12 records) with 2024 (13) — a three-year span. 2024 is the most recent year we treat as complete: publication lags filing by roughly 18 months, so 2025 onwards are still filling in and any growth rate that ends there would understate the field. Top-5 share is the combined record count of the five largest assignees divided by all 284 records in scope (CR5), not by the ranked leaders only.

Published byPatsnap Research··7 min readSourced from Patsnap Eureka
Overview

What this landscape covers

High aspect ratio etch profile control addresses a persistent problem in deep-hole and high-aspect-ratio structures: as etch depth increases relative to opening width, sidewalls bow, twist, or lose critical dimension control because of charging effects, uneven polymer passivation, and mask selectivity limits. The 284 records in this dataset span claims on passivation balance, charging-induced profile correction, and aspect-ratio-dependent etch chemistry, drawn from filings dated 2015 through mid-2026.

The scope is defined by title and claim-language searches for sidewall bowing, twisting, charging-induced profile effects, mask selectivity, and passivation balance — the mechanisms practitioners actually name when a deep-hole etch profile goes wrong, rather than the broader term 'plasma etch'.

Filing activity and technology composition, 2015–2026
  1. 1LAM RES CORP88
  2. 2TOKYO ELECTRON LTD37
  3. 3MICRON TECHNOLOGY INC23
  4. 4SK HYNIX INC14
  5. 5PILEGROWTH TECH SRL13
  6. 6LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE13
  7. 7APPLIED MATERIALS INC13
  8. 8INTERNATIONAL BUSINESS MACHINE CORPORATION12
  9. 9AIR LIQUIDE AMERICA INC11
  10. 10PROLEUS INC8
Source: Patsnap Eureka. Assignee ranking and totals. Derived from a Patsnap search on High Aspect Ratio Etch Profile Control covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP

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The Numbers

Filing trend and technology composition

Two views of the same 284 records: how filing activity has moved year over year, and which IPC subclasses the claims actually sit in.

Filing trend, 2017–2026

Filings rose from 7 in 2017 to a peak of 17 in 2019, held near that level through the 2022 midpoint (16), and have since flattened. The most recent year is partial and will read low regardless of underlying activity, since publication typically lags filing by around 18 months.

Filing trend, 2017–20260510152072017201817201920202021202220232024202502026Most recent year is partial — publication lag means later filings are not yet visible.

IPC subclass composition

H01L (semiconductor devices) covers 77.5% of the 284 records, confirming this is fundamentally a device-fabrication field. H10P (26.8%) and H10B, memory device manufacture (19.0%), are the two largest sub-groupings beneath that headline class, with H01J electron/discharge tube claims (14.4%) and smaller shares in plasma physics (H05H), turning/boring (B23B), photolithography (G03F) and general semiconductor devices (H10D) rounding out the picture. Because records can carry multiple classes, these shares sum to more than 100%.

IPC subclass compositionH01L · Semiconductor devices22077.5%H10P7626.8%H10B · Memory device manufacture5419.0%H01J · Electron & discharge tubes4114.4%H05H · Plasma & particle accelerators207.0%B23B · Turning & boring155.3%G03F · Photolithography & photomechan…155.3%H10D · Semiconductor devices (general)144.9%Other14149.6%

Shares are the percentage of the 284 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.

Source: Patsnap Eureka. Filing trend and technology composition. Derived from a Patsnap search on High Aspect Ratio Etch Profile Control covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.

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Key Patents

The most-cited prior art in this space

Representative filing
US8367303B22013-02-05

US8367303B2 — Semiconductor device fabrication and dry develop process for CD tunability and profile control

MICRON TECHNOLOGY, INC.

The critical dimension of features formed during semiconductor fabrication is controlled through a dry develop chemistry combining O2, SO2 and a hydrogen halide. Adding HBr to the conventional O2/SO2 dry develop chemistry lets a user tune critical dimension by growing, trimming or sloping sidewalls, while enhancing sidewall passivation and reducing sidewall bowing.Filed by Micron Technology; granted 2013-02-05.

US8367303B2 — patent drawing 1US8367303B2 — patent drawing 2
View full record
Most-cited records in scope
#Publication no.Patent titleCitations
1US20150087154A1High aspect ratio etch with combination mask487
2US6358842B1Method to form damascene interconnects with sidewall passivation to protect organic dielectrics143
3US6040248AChemistry for etching organic low-k materials94
4US20100213172A1Using Positive DC Offset of Bias RF to Neutralize Charge Build-Up of Etch Features81
5US7743672B2Multiple axis load cell controller72
6JP2016021546ASubstrate processing system and substrate processing method71
7US20070193975A1Using positive DC offset of bias RF to neutralize charge build-up of etch features69
8US20060118518A1High aspect ratio etch using modulation of RF powers of various frequencies69
9US5433501APost construction and sidewall for cargo container69
10US20130037857A1Dislocation and stress management by mask-less processes using substrate patterning and methods for device fa…68

Citation counts are pulled from a searched corpus and favour older filings; treat them as a measure of influence on later filers, not a ranking of current technical importance.

Each row carries its publication number; clicking a row searches Eureka by that number.

Source: Patsnap Eureka. Citation counts and representative records. Derived from a Patsnap search on High Aspect Ratio Etch Profile Control covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
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Insights

What the data means for filing strategy

Three patterns stand out once the records are sorted by assignee, class and year.

Concentration
61.6% of 284 records
held by top 5 filers

A narrow leadership group, not a fragmented field

The leader alone holds 88 records against a fifth-place count of 13, and the top ten together hold 81.7% of all records in scope. New entrants are filing into a space where a small number of established players already hold most of the claim territory around passivation balance and CD control.

Ranking covers 62 companies total.
Momentum
0 filings in latest year
across every leading assignee

Flat-to-declining activity from the biggest filers

Every one of the leading assignees shows zero filings in the most recent tracked year, several down 100% year over year from prior activity. This reads partly as publication lag — filings from the last 18 months are still working through to publication — but the flattening trend from the 2022 midpoint onward is a real signal, not just a lag artefact.

Peak filing year was 2019, at 17 records.
Technology mix
26.8% in H10P
of 284 records

Claims spread well beyond core H01L device claims

H10P captures more than a quarter of records, and H10B (memory device manufacture) close to a fifth — both sit alongside the dominant H01L class rather than replacing it. Filers working purely within H01L boundaries are missing a meaningful share of where profile-control claims actually land.

Classes overlap; shares sum above 100% by design.
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Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to high aspect ratio etch profile control, with the prior art for and against each one.

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Source: Patsnap Eureka. Co-assignee relationships and derived observations. Derived from a Patsnap search on High Aspect Ratio Etch Profile Control covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
Players

Who holds the claim space

The assignee ranking covers 62 companies drawn from the full 284-record dataset. A small group of device manufacturers and equipment makers accounts for most of the volume, with a long tail of single- or few-filing entrants behind them.

Leader position
88 records
held by the top-ranked assignee

A single filer well ahead of the field

The leading assignee's 88 records sit far above the fifth-place count of 13, a gap that marks this as a field with one dominant incumbent rather than several closely matched competitors.

Gap widens further beyond tenth place (8 records).
Second tier
13 to 8 records
fifth through tenth place

A tight cluster just behind the leader

Between fifth and tenth place the record counts compress from 13 down to 8, suggesting several device and equipment makers are filing at a similar, moderate pace rather than one runner-up closing the gap.

Top 10 combined hold 81.7% of all 284 records.
Collaboration
10 co-assignee pairs
identified in the dataset

Co-filing is limited and concentrated

Only 10 co-assignee pairs appear across the dataset, and the strongest of these repeats six times — a sign that most filers in this space patent independently rather than through joint development programmes.

Strongest pair recurs across 6 shared filings.
🔍
Under-claimed sub-areas worth checking before filing
Branches where record density is thin relative to the core H01L claim space.
Charging-induced profile correction bias schemesAspect-ratio-dependent passivation timing controlMask selectivity tuning for organic hardmasksPlasma-accelerator-assisted profile shaping (H05H)Deep-hole boring geometry claims (B23B)
Rank all filers by momentum →
Recent-year filing momentum by assignee
AssigneeRecent yearYoY
Lam Research Corp0-100%
Tokyo Electron Ltd0-100%
Micron Technology Inc0
SK Hynix Inc0
International Business Machines Corporation0
L'Air Liquide SA pour l'Etude et l'Exploitation des Procedes Georges Claude0
Applied Materials Inc0
MIGLIO LEONIDA0
Source: Patsnap Eureka. Assignee-level momentum. Derived from a Patsnap search on High Aspect Ratio Etch Profile Control covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
What's Next

Where to take this analysis

The dataset points to specific next steps depending on whether the goal is freedom-to-operate, competitive tracking, or identifying open claim territory.

Map claims against the leader's 88-record portfolio

Before filing into passivation balance or CD-tuning claims, check overlap against the top assignee's full family, since it accounts for close to a third of all 284 records in scope.

Explore assignee portfolios in Eureka

Track the flattening filing trend by quarter

Year-level counts show activity cooling since the 2022 midpoint, but the most recent year is structurally undercounted; quarterly tracking closes that lag faster than waiting for annual totals.

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Test claim language in the under-claimed branches

H05H and B23B carry far fewer records than H01L despite covering related mechanisms — plasma-assisted shaping and deep-hole boring geometry are worth a claim-drafting pass before assuming the space is occupied.

Run a white space search in Eureka
Source: Patsnap Eureka. Forward-looking reading of the same dataset. Derived from a Patsnap search on High Aspect Ratio Etch Profile Control covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
FAQ

Common questions on this landscape

Answers are grounded in the same dataset. Derived from a Patsnap search on High Aspect Ratio Etch Profile Control covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP

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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.

Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company's registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.