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Run your analysis now →Filing growth compares 2021 (12 records) with 2024 (13) — a three-year span. 2024 is the most recent year we treat as complete: publication lags filing by roughly 18 months, so 2025 onwards are still filling in and any growth rate that ends there would understate the field. Top-5 share is the combined record count of the five largest assignees divided by all 284 records in scope (CR5), not by the ranked leaders only.
High aspect ratio etch profile control addresses a persistent problem in deep-hole and high-aspect-ratio structures: as etch depth increases relative to opening width, sidewalls bow, twist, or lose critical dimension control because of charging effects, uneven polymer passivation, and mask selectivity limits. The 284 records in this dataset span claims on passivation balance, charging-induced profile correction, and aspect-ratio-dependent etch chemistry, drawn from filings dated 2015 through mid-2026.
The scope is defined by title and claim-language searches for sidewall bowing, twisting, charging-induced profile effects, mask selectivity, and passivation balance — the mechanisms practitioners actually name when a deep-hole etch profile goes wrong, rather than the broader term 'plasma etch'.
Pick a task. Every answer cites the patents behind it.
Two views of the same 284 records: how filing activity has moved year over year, and which IPC subclasses the claims actually sit in.
Filings rose from 7 in 2017 to a peak of 17 in 2019, held near that level through the 2022 midpoint (16), and have since flattened. The most recent year is partial and will read low regardless of underlying activity, since publication typically lags filing by around 18 months.
H01L (semiconductor devices) covers 77.5% of the 284 records, confirming this is fundamentally a device-fabrication field. H10P (26.8%) and H10B, memory device manufacture (19.0%), are the two largest sub-groupings beneath that headline class, with H01J electron/discharge tube claims (14.4%) and smaller shares in plasma physics (H05H), turning/boring (B23B), photolithography (G03F) and general semiconductor devices (H10D) rounding out the picture. Because records can carry multiple classes, these shares sum to more than 100%.
Shares are the percentage of the 284 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
This page is one run against one query. Ask Eureka your own question about high aspect ratio etch profile control and every answer comes back with the patent numbers behind it.
Try EurekaThe critical dimension of features formed during semiconductor fabrication is controlled through a dry develop chemistry combining O2, SO2 and a hydrogen halide. Adding HBr to the conventional O2/SO2 dry develop chemistry lets a user tune critical dimension by growing, trimming or sloping sidewalls, while enhancing sidewall passivation and reducing sidewall bowing.Filed by Micron Technology; granted 2013-02-05.


| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20150087154A1 | High aspect ratio etch with combination mask | 487 |
| 2 | US6358842B1 | Method to form damascene interconnects with sidewall passivation to protect organic dielectrics | 143 |
| 3 | US6040248A | Chemistry for etching organic low-k materials | 94 |
| 4 | US20100213172A1 | Using Positive DC Offset of Bias RF to Neutralize Charge Build-Up of Etch Features | 81 |
| 5 | US7743672B2 | Multiple axis load cell controller | 72 |
| 6 | JP2016021546A | Substrate processing system and substrate processing method | 71 |
| 7 | US20070193975A1 | Using positive DC offset of bias RF to neutralize charge build-up of etch features | 69 |
| 8 | US20060118518A1 | High aspect ratio etch using modulation of RF powers of various frequencies | 69 |
| 9 | US5433501A | Post construction and sidewall for cargo container | 69 |
| 10 | US20130037857A1 | Dislocation and stress management by mask-less processes using substrate patterning and methods for device fa… | 68 |
Citation counts are pulled from a searched corpus and favour older filings; treat them as a measure of influence on later filers, not a ranking of current technical importance.
Each row carries its publication number; clicking a row searches Eureka by that number.
When you want the answer in the next five minutes.
The agent works the prompt against patents and technical literature, citing every source.
Run your analysis now →When it has to run inside your own pipeline.
Patent search, landscape analysis and assignee resolution as MCP tools. Drop them into any agent framework, or call REST directly.
Browse MCP servers →Three patterns stand out once the records are sorted by assignee, class and year.
The leader alone holds 88 records against a fifth-place count of 13, and the top ten together hold 81.7% of all records in scope. New entrants are filing into a space where a small number of established players already hold most of the claim territory around passivation balance and CD control.
Every one of the leading assignees shows zero filings in the most recent tracked year, several down 100% year over year from prior activity. This reads partly as publication lag — filings from the last 18 months are still working through to publication — but the flattening trend from the 2022 midpoint onward is a real signal, not just a lag artefact.
H10P captures more than a quarter of records, and H10B (memory device manufacture) close to a fifth — both sit alongside the dominant H01L class rather than replacing it. Filers working purely within H01L boundaries are missing a meaningful share of where profile-control claims actually land.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to high aspect ratio etch profile control, with the prior art for and against each one.
The assignee ranking covers 62 companies drawn from the full 284-record dataset. A small group of device manufacturers and equipment makers accounts for most of the volume, with a long tail of single- or few-filing entrants behind them.
The leading assignee's 88 records sit far above the fifth-place count of 13, a gap that marks this as a field with one dominant incumbent rather than several closely matched competitors.
Between fifth and tenth place the record counts compress from 13 down to 8, suggesting several device and equipment makers are filing at a similar, moderate pace rather than one runner-up closing the gap.
Only 10 co-assignee pairs appear across the dataset, and the strongest of these repeats six times — a sign that most filers in this space patent independently rather than through joint development programmes.
| Assignee | Recent year | YoY |
|---|---|---|
| Lam Research Corp | 0 | -100% |
| Tokyo Electron Ltd | 0 | -100% |
| Micron Technology Inc | 0 | — |
| SK Hynix Inc | 0 | — |
| International Business Machines Corporation | 0 | — |
| L'Air Liquide SA pour l'Etude et l'Exploitation des Procedes Georges Claude | 0 | — |
| Applied Materials Inc | 0 | — |
| MIGLIO LEONIDA | 0 | — |
The dataset points to specific next steps depending on whether the goal is freedom-to-operate, competitive tracking, or identifying open claim territory.
Before filing into passivation balance or CD-tuning claims, check overlap against the top assignee's full family, since it accounts for close to a third of all 284 records in scope.
Explore assignee portfolios in EurekaYear-level counts show activity cooling since the 2022 midpoint, but the most recent year is structurally undercounted; quarterly tracking closes that lag faster than waiting for annual totals.
Set up filing alerts in EurekaH05H and B23B carry far fewer records than H01L despite covering related mechanisms — plasma-assisted shaping and deep-hole boring geometry are worth a claim-drafting pass before assuming the space is occupied.
Run a white space search in EurekaOne assignee leads clearly with 88 records, well ahead of the fifth-ranked filer at 13. The top five filers together hold 61.6% of all 284 records in scope, and the top ten hold 81.7%, so this is a field where a handful of established semiconductor equipment and device makers control most of the documented claim space. The ranking covers 62 companies in total, with a long tail of firms holding only a few records each.
No — filing activity peaked in 2019 at 17 records, held roughly steady near the 2022 midpoint at 16, and every leading assignee shows zero filings in the most recent tracked year. Some of that drop reflects normal publication lag, since patents typically take around 18 months from filing to publication, so the newest year always looks artificially low. But the flattening trend running from 2022 onward, before the lag window even begins, suggests genuine cooling rather than a purely reporting-driven dip.
US8367303B2, assigned to Micron Technology and granted in 2013, claims a dry develop chemistry combining oxygen, sulfur dioxide and a hydrogen halide such as HBr to remove exposed areas of a carbon-based mask. The addition of HBr to the conventional O2/SO2 chemistry lets an operator tune critical dimension by growing, trimming or sloping sidewalls, while improving sidewall passivation and reducing bowing. Anyone using a similar three-component dry develop chemistry for CD tuning in mask removal should check this claim scope directly rather than assume it only covers a narrow process window.
H01L, the general semiconductor devices class, covers 77.5% of the 284 records, confirming this is primarily a device fabrication field. Beneath that, H10P appears in 26.8% of records and H10B, memory device manufacture, in 19.0%, marking the two largest sub-groupings of claim activity. Because a single record can carry multiple IPC classes, these percentages add up to more than 100% and should not be read as a strict pie chart of the field.
The classes with the lowest record density relative to H01L — H05H (plasma and particle accelerators, 7.0%), B23B (turning and boring, 5.3%) and G03F (photolithography, 5.3%) — are the most likely places to find under-claimed mechanisms rather than crowded prior art. Charging-induced profile correction and aspect-ratio-dependent passivation timing are specific sub-mechanisms named in the search scope that have not generated the same filing density as core mask-selectivity or CD-control claims. A freedom-to-operate search focused on these narrower mechanisms, rather than the broad H01L class, is likely to surface fewer blocking references.
Go past this page: query the whole high aspect ratio etch profile control corpus yourself, in your own scope.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company's registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.