IGBT Gate Dielectric Patents: Top Companies & Filing Trends 2026
A patent landscape review of IGBT gate dielectric technology: 261 records in scope, filing trends since 2015, assignee concentration, IPC composition, and the most-cited prior art.
Filing growth = 2021 (18 records) → 2024 (12); 2024 is the last year we treat as complete. Top-5 share = the 5 largest assignees ÷ all 261 records in scope (CR5), not the ranked leaders only.
What the IGBT gate dielectric filing record shows
IGBT gate dielectric technology covers the gate insulation and gate insulator structures that govern switching behaviour, threshold stability and reliability in insulated-gate bipolar transistors. The scope here draws on 261 published records filed or published between 2015 and the 2026 data cut-off, tagged against IPC classes centred on H01L and H10D. Filing activity rose through the late 2010s, peaked in 2019, and has since eased back — a pattern consistent with a technology whose core claim space filled early and is now being worked at the margins.
Assignee concentration is moderate rather than extreme: the leading company holds a visible lead, but the field also carries a long tail of single- and few-filing entrants. That combination matters for freedom-to-operate work — the core is claimed, but there is room to find gaps rather than assuming the whole space is blocked.
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Filing trend, technology composition and where applications are filed
Three views of the same 261 records: how filing has moved over time, which IPC subclasses carry the work, and which receiving offices see the most applications.
A 2019 peak followed by a pullback
Filing rose from 14 records in 2017 to a peak of 37 in 2019, then declined; the 2021-to-2024 window is down 33% (18 to 12 records). Because publication lags filing by roughly 18 months, 2025 and 2026 figures are still filling in and should not be read as a continuation of decline.
Publication lags filing by roughly 18 months, so 2025 onwards are still filling in. Growth rates on this page therefore end at 2024; running them to the last bar would understate the field.
H01L dominates; secondary classes are thin
H01L covers 92.7% of the 261 records and H10D covers 41.8%, confirming this is squarely a semiconductor-device filing area. Beyond those two, coverage drops sharply — H10P at 8.8% and H10W at 6.1% — with smaller adjacent classes like H03K, A61K, F02P and G01R appearing in only a handful of records each.
Shares are the percentage of the 261 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on IGBT Gate Dielectric Patent Landscape with Eureka
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Try EurekaRepresentative filing and most-cited prior art
TW201526236A — Semiconductor Device
This filing, assigned to Toyota, addresses a compact IGBT structure where the diode's forward voltage is designed to resist variation with gate potential. It specifies a trench gate insulating film and gate electrode running along the boundary between an anode region and an upper IGBT structure, with a crystal-defect region extending across the drift region beneath both the cathode and collector regions, sized according to a stated relationship to substrate thickness.Abstract condensed from the original filing for readability.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20120181575A1 | Semiconductor Device and a Reverse Conducting IGBT | 91 |
| 2 | US20080012040A1 | Semiconductor Devices | 69 |
| 3 | US20140299915A1 | Semiconductor device | 53 |
| 4 | US20110101375A1 | Power Semiconductor Devices Having Selectively Doped JFET Regions and Related Methods of Forming Such Devices | 53 |
| 5 | US20100301335A1 | High Voltage Insulated Gate Bipolar Transistors with Minority Carrier Diverter | 48 |
| 6 | JP2015118991A | Semiconductor device | 47 |
| 7 | US6417554B1 | Latch free IGBT with schottky gate | 47 |
| 8 | JP2014197702A | Insulated gate semiconductor device | 42 |
| 9 | US9275915B2 | Circuit device having a semiconductor component | 41 |
| 10 | US20140264433A1 | Dual-gate trench IGBT with buried floating p-type shield | 37 |
Citation counts favour older records that have had more time to accumulate citations inside this corpus; treat them as a signal of influence on the field, not of current filing activity.
Each row carries its publication number; clicking a row searches Eureka by that number.
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Browse MCP servers →Reading the concentration and composition figures
The ranking and the IPC breakdown point to the same conclusion from two angles: a claimed core surrounded by thinner, more accessible branches.
Leadership is real but not dominant
The leading assignee holds 20 records against a fifth-place figure of 12 and a tenth-place figure of 9 — a gradual taper, not a cliff. Combined with 86 ranked companies overall, this points to a field where the leader has an edge in volume but nowhere near a monopoly on claim space.
Activity has cooled from its 2019 high
Filing climbed from 14 records in 2017 to 37 in 2019, then eased; the 2021-to-2024 span is down 33%. Given the roughly 18-month lag between filing and publication, the most recent years understate true activity and should not be read as confirmation of a continued slide.
Secondary classes are comparatively open
H01L and H10D together anchor the field, appearing in 92.7% and 41.8% of records respectively. H10P and H10W, at 8.8% and 6.1%, carry far less filing weight — these are the branches worth checking first for room to file a distinct claim rather than compete inside the dominant classes.
Filing is spread across major offices, led by the US and China
The United States leads with 85 records, followed by China at 60 and Japan at 49; Europe, WIPO and India each see smaller but non-trivial volumes. That spread suggests IGBT gate dielectric protection is being pursued as a multi-jurisdiction strategy rather than concentrated in a single home market.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to igbt gate dielectric patent landscape, with the prior art for and against each one.
| Assignee | Co-assignee | Shared families |
|---|---|---|
| Toyota Motor Corporation | Toyota Central R&D Labs, Inc. | 5 |
| Wolfspeed, Inc. | ZHANG QINGCHUN | 3 |
| Wolfspeed, Inc. | RYU SEI HYUNG | 2 |
| Toshiba Corporation | Toshiba Electronic Devices & Storage Corporation | 2 |
| Toyota Motor Corporation | Denso Corporation | 1 |
| Toyota Motor Corporation | Shinya Iwasaki | 1 |
| Toyota Motor Corporation | Satoru Kameyama | 1 |
| Toyota Motor Corporation | KAMEYAMA SATORU | 1 |
Only 9 co-assignee pairs appear across the dataset, the strongest linking Toyota with its research affiliate on 5 records — a sign that most work here is filed by single entities rather than through joint development.
Turning this landscape into a filing decision
The figures above describe where filing has happened. The next step is testing a specific claim idea against that map.
Check freedom-to-operate before drafting
With the top 5 assignees holding 27.6% of the 261 records in scope, a targeted novelty and infringement check against the leading filers costs less than discovering a blocking claim after filing.
Run a freedom-to-operate check in EurekaScope claims toward the thinner IPC branches
H10P and H10W each cover under 9% of records against H01L's 92.7% — a starting point for identifying claim language that sits outside the most crowded subclass.
Explore IPC white space in EurekaTrack the leaders' recent filings directly
Assignee concentration is moderate, not absolute; watching the ranked leaders' newest publications is a faster signal than waiting for aggregate trend data to catch up.
Monitor assignee activity in EurekaCommon questions about IGBT gate dielectric patents
This landscape covers 261 published records filed or published between 2015 and the 2026 data cut-off, drawn from a search across title, abstract and claims text combined with IPC classes centred on H01L and H10D. That figure counts patent families in the assignee ranking, which is the fairer unit than raw document counts because it neutralises duplicate filings across jurisdictions. The true figure for any single company will be smaller once you filter to its granted claims and jurisdictions of interest.
The ranking lists 86 companies, with the leader holding 20 records and a gradual taper down to 12 records at fifth place and 9 at tenth. The top 5 combined hold 27.6% of all 261 records in scope, and the top 10 combined hold 48.7% — meaningful concentration but not a monopoly. The remainder is a long tail of companies with only a handful of filings each, which is where much of the design-around opportunity typically sits.
Filing rose from 14 records in 2017 to a peak of 37 in 2019, then declined, with the 2021-to-2024 window down 33% (18 records to 12). Because patent publication lags filing by roughly 18 months, the 2025 and 2026 figures in any dataset are still incomplete and understate real activity. Read the recent pullback as a cooling from a strong 2019 peak, not as evidence the field is closing down.
TW201526236A is a Toyota filing describing a compact IGBT structure with a trench gate insulating film and gate electrode positioned along the boundary between an anode region and an upper IGBT structure, plus a crystal-defect region sized relative to substrate thickness. It blocks new claims that overlap that specific defect-region sizing relationship and the described trench gate geometry combination, not IGBT gate dielectrics generally. A freedom-to-operate review should check claim scope directly against the granted claims rather than the abstract summarised here.
H01L (semiconductor devices) covers 92.7% of the 261 records in this scope and is the essential class to search. H10D adds coverage on 41.8% of records, while H10P and H10W pick up smaller but distinct subsets at 8.8% and 6.1% respectively. A thorough search should include all four, since a single record commonly carries more than one class and narrower searches on H01L alone will miss adjacent filings.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.