MRAM Mixed-Signal Neural Circuit Patents: Leaders & Trends 2026
- Filing has cooled since 2019. the peak year at 43 filings, with the 2022 midpoint at 36 already signalling a flat-to-declining trend into the most recent, still-partial year.
- The top 5 assignees hold 42.2% of all 650 records. and the top 10 extend that to 58.3%, leaving a long tail of single- or few-filing entrants across the remaining ranked companies.
- G11C static/digital memory claims dominate. appearing in 75.7% of the 650 records in scope, well ahead of the solid-state device classes H10N and H01L that each sit just above half.
Filing growth compares 2021 (22 records) with 2024 (7) — a three-year span. 2024 is the most recent year we treat as complete: publication lags filing by roughly 18 months, so 2025 onwards are still filling in and any growth rate that ends there would understate the field. Top-5 share is the combined record count of the five largest assignees divided by all 650 records in scope (CR5), not by the ranked leaders only.
What this patent set covers
This landscape covers 650 published records filed between 2015 and mid-2026 that combine magnetoresistive memory (MRAM) architectures with mixed-signal or spintronic-synapse circuit claims, filtered against practical constraints such as write current, endurance, array-level offset and process integration. The scope is deliberately narrow: it is not general MRAM, but the subset where memory cells are claimed alongside analogue or neural-circuit-adjacent function.
Filing has been dominated by a small group of established memory and semiconductor manufacturers, with receiving offices concentrated in the United States, followed by the EPO and WIPO PCT route. The most-cited records in the set date back to foundational MRAM writing and cell-switching patents, which still anchor freedom-to-operate analysis for anyone entering the space today.
Filing trends and technology composition
The trend line and IPC breakdown below are drawn directly from the 650 records in scope. Publication typically lags filing by around 18 months, so the final year on the chart understates real filing activity.
Filing trend, 2017–2026
Filings rose to a peak of 43 in 2019, held near the 2022 midpoint of 36, and have since drifted down toward the partial, still-incomplete most recent year — a pattern consistent with a maturing claim space rather than an emerging one.
IPC subclass composition
G11C static and digital memory classifications appear in 75.7% of the 650 records, with H10N and H01L solid-state device classes each present in just over half. Because records can carry multiple IPC classes, these shares sum to well over 100% and should be read as overlapping technology facets, not a partition of the field.
Shares are the percentage of the 650 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on MRAM Based Mixed-Signal Neural Circuits with Eureka
This page is one run against one query. Ask Eureka your own question about mram based mixed-signal neural circuits and every answer comes back with the patent numbers behind it.
Try EurekaMost-cited records and a representative filing
US20110026316A1 — Magnetoresistive memory elements with separate read and write current paths
A magnetoresistive memory element has a free layer, and a write current path aligned with a free layer plane. The memory element has a pinned layer with a magnetization direction aligned with that of the free layer. A barrier layer is disposed between the free layer and the pinned layer. The free, barrier and pinned layers together form a layer stack that has a read current path that extends through the layer stack and that is not aligned with the write current path in the free layer.Filed by Seagate Technology, this record separates the read and write current paths physically within the layer stack — a structural approach that recurs across later endurance- and offset-focused filings in this set.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US6545906B1 | Method of writing to scalable magnetoresistance random access memory element | 673 |
| 2 | US5587943A | Nonvolatile magnetoresistive memory with fully closed flux operation | 301 |
| 3 | US6744086B2 | Current switched magnetoresistive memory cell | 281 |
| 4 | US4780848A | Magnetoresistive memory with multi-layer storage cells having layers of limited thickness | 192 |
| 5 | US20140252439A1 | MRAM having spin hall effect writing and method of making the same | 190 |
| 6 | US6777730B2 | Antiparallel magnetoresistive memory cells | 172 |
| 7 | US20030007398A1 | Current switched magnetoresistive memory cell | 154 |
| 8 | US7277317B2 | MRAM architecture for low power consumption and high selectivity | 136 |
| 9 | US4731757A | Magnetoresistive memory including thin film storage cells having tapered ends | 131 |
| 10 | US8686484B2 | Spin-torque magnetoresistive memory element and method of fabricating same | 130 |
Citation counts reflect influence within the searched corpus and are structurally biased toward older filings; recency does not track this table.
Each row carries its publication number; clicking a row searches Eureka by that number.
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Three patterns stand out once the ranking, trend and classification data are read together.
The top of the field is tight, the rest is thin
The leader alone accounts for 95 records, and the gap down to fifth place (28) is steep. Beyond tenth place (18), the ranking spreads across many companies with only a handful of filings each, which is where freedom-to-operate risk is lower but prior art is also thinner and less predictable.
Filing has plateaued, not accelerated
None of the recent-momentum assignees show growth in the latest tracked year; several show a full year-over-year drop to zero. That is consistent with a technology area where core cell and circuit claims were staked out earlier in the window and current activity is incremental rather than expansive.
Memory-array claims still anchor the field
G11C static and digital memory classifications dominate, but H10N and H01L solid-state device classes each appear in just over half of records, showing that most filings straddle memory-array and device-fabrication claim language rather than sitting in one silo.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to mram based mixed-signal neural circuits, with the prior art for and against each one.
Who is filing, and where the gate sits
The ranked leaders combine large memory manufacturers with a smaller group of specialist spintronic and foundry filers, but recent-year activity has cooled across nearly all of them.
A single leader well ahead of the field
The top-ranked assignee's 95 records sit far above fifth place at 28, giving it an outsized position in core MRAM cell and array claims that any new entrant in the same claim territory will need to search closely.
A steep drop after the leader
Positions five through ten hold a narrower but still meaningful set of filings, together contributing to the 58.3% share held by the top 10. This band is where specialist memory and semiconductor manufacturing firms compete directly with the leader on process-integration and endurance claims.
A wide base of low-volume filers
The remaining ranked companies each hold a small slice of the 650 records, reflecting either narrow product-specific filings or early-stage entrants testing the space rather than building broad portfolios.
| Assignee | Recent year | YoY |
|---|---|---|
| Everspin Technologies Inc | 0 | -100% |
| Koninklijke Philips N.V. | 0 | — |
| Western Digital Technologies, Inc. | 0 | — |
| SanDisk Technologies LLC | 0 | -100% |
| Infineon Technologies AG | 0 | — |
| Micron Technology, Inc. | 0 | — |
| Freescale Semiconductor, Inc. | 0 | — |
| Integrated Magnetoelectronics Corp | 0 | — |
Where to take this analysis
The dataset points to a field with a settled top tier and a cooling filing trend. The next steps depend on whether the goal is freedom-to-operate, portfolio benchmarking, or identifying open claim territory.
Check freedom-to-operate against the leader's claims
With one assignee holding 95 of 650 records, any design touching core MRAM cell writing or array-offset compensation should be checked against that portfolio before further development.
Run a claim comparison in Patsnap EurekaTrack whether the plateau turns into a decline
Filing peaked in 2019 and has not recovered by the 2022 midpoint; the next one to two publication years will show whether this is a temporary lull or a structural exit from the space.
Set up a filing-trend alert in Patsnap EurekaExplore the under-claimed sub-areas directly
Mixed-signal calibration and spintronic weight-update schemes show thinner direct coverage than the core memory classes, making them a reasonable starting point for a first-claim search.
Search white space in Patsnap EurekaCommon questions about this patent landscape
The assignee ranking is led by a single company with 95 of the 650 records in scope, well ahead of the rest of the field. The top 5 assignees together hold 42.2% of all records, and that share extends to 58.3% across the top 10, so the field is concentrated at the top but not dominated by one company alone. Beyond the top 10, coverage spreads thinly across the remaining ranked companies, each holding only a handful of filings.
Filing peaked at 43 records in 2019 and had fallen back to 36 by the 2022 midpoint, indicating a flat-to-declining trend rather than continued growth. The most recent year in the dataset is partial because publication typically lags filing by around 18 months, so the final year understates real activity. Even accounting for that lag, recent-year momentum data shows several major assignees at zero filings year-over-year, reinforcing the plateau.
G11C, the static and digital memory classification, appears in 75.7% of the 650 records in scope, making it the dominant technology facet. H10N and H01L, covering solid-state and semiconductor devices generally, each appear in just over half of records, showing heavy overlap between memory-array claims and device-fabrication claims. Because a single record can carry multiple IPC classes, these percentages overlap rather than summing to a whole field.
Sub-areas such as array-level offset compensation circuits, mixed-signal read/write current calibration and spintronic synapse weight-update schemes show comparatively thin direct coverage relative to the core memory-array and semiconductor device classes. This does not mean these areas are unclaimed, but that the dense claim thickets sit elsewhere, in G11C, H10N and H01L territory. A first claim in these adjacent areas would need to combine the calibration or compensation function with a specific circuit topology to differentiate from the core memory claims already on file.
US20110026316A1, assigned to Seagate Technology, claims a magnetoresistive memory element with physically separated read and write current paths within the layer stack — the write path aligned with the free layer plane, the read path passing through the full stack. Any design that relies on this same structural separation to reduce read-disturb or improve write efficiency should be checked against this claim scope. It remains one of the field's representative filings for endurance- and offset-related circuit design, alongside the older, more heavily cited foundational MRAM patents in this set.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.