Plasma Assisted Deposition Technology 2026 — PatSnap Eureka
Plasma Assisted Deposition: Patent & Innovation Intelligence
From PECVD and PA-ALD to atmospheric-pressure plasma jets and pulsed high-power systems — map the assignee landscape, emerging whitespace, and forward-dated active patents shaping thin-film fabrication through 2026.
Four Principal Sub-Domains of Plasma Assisted Deposition
Plasma assisted deposition leverages non-equilibrium plasma — a partially ionized gas containing reactive radicals, ions, and photons — to activate deposition reactions at substrate temperatures significantly below conventional thermal CVD or PVD. Four identifiable clusters span the patent and literature dataset.
Capacitively Coupled Plasma CVD (CCP-PECVD)
RF power applied between parallel plate electrodes dissociates precursor gases (TEOS, silane, alpha-Si, SiNx) into film-forming radicals. The dominant architecture in the early and mid-period dataset. Key innovations include mesh electrode tuning for plasma uniformity (Murata Manufacturing, 2000) and in-situ etchback with variable wafer-to-manifold spacing (Applied Materials, 1994). Foundational filings span Samsung Electronics (1993), NEC Corporation (1996), and Toshiba Corporation (2002).
Active filings: Applied Materials KR 2022, 2025Remote Plasma & Plasma-Assisted ALD (PA-ALD / PEALD)
Remote and pulsed plasma ALD systems decouple plasma generation from the substrate, minimizing ion bombardment damage while delivering reactive radicals for self-limiting surface chemistry. Korean semiconductor equipment filings from 2005 define this space: IPS Co., Ltd.'s two-stage pulsed plasma ALD and DASAN C&I's ring-type remote plasma apparatus. Japan Steel Works' insulator-enclosed upper electrode PEALD equipment (JP, 2020, active) extends the design space to improved film quality. The Eindhoven University of Technology review (2019) anchors scientific consensus on PA-ALD maturity for quantum computing, AI accelerators, and IoT devices.
Highest-growth sub-domain for atomic-scale fabricationRibbon-Beam & High-Density Plasma CVD
Addresses high-aspect-ratio gap fill and directional deposition via differential-pressure beam architectures and ICP+CCP hybrid configurations. Applied Materials' ribbon-beam PECVD (KR, 2022, active) maintains the plasma chamber at higher pressure than the process chamber, driving a directed beam of free radicals through an opening into the deposition zone. A 2025 continuation filing confirms ongoing commercial prosecution. Samsung Electronics' combined ICP+CCP apparatus (KR, 2004) applies LF pulse and VHF generators simultaneously to the wafer stage to reduce charge-up phenomenon and improve gap-fill capability at advanced nodes.
Most recently filed active patent: Applied Materials 2025Atmospheric-Pressure & Pulsed High-Power Plasma
Atmospheric-Pressure Plasma Jet (APPJ) systems eliminate vacuum infrastructure and enable inline, open-air processing. China Academy of Engineering Physics (2021) demonstrates APPJ with FFT-based dwell time algorithms achieving sub-nanometer convergence on freeform diffractive optics surfaces. Pulsed high-power techniques (HiPP-PECVD, IPD, DPF) use high-power pulsed discharges to dramatically increase plasma density — enabling guided deposition and metastable phase formation. These remain predominantly in academic literature with limited commercial patent activity, representing either early-stage opportunity or scalability barriers.
Whitespace IP opportunity in atmospheric-pressure apparatusA Multi-Decade Arc: 1992 to 2025
Among the retrieved records, publication and filing dates span from 1992 to 2025, revealing four distinct development eras. The 1992–2002 Foundational Hardware Era is characterized by hardware consolidation around parallel-plate RF-CCP and ECR plasma configurations. Samsung Electronics (KR, 1993), NEC Corporation (KR, 1996), and Applied Materials' TEOS plasma CVD single-wafer reactor (JP, 1994) establish the core architectures still referenced in modern filings.
The 2005–2013 Atomic Layer Precision era introduced cyclically pulsed two-level plasma ALD (IPS Co., Ltd., KR, 2005) targeting low-temperature deposition with minimized plasma damage, and remote plasma ALD configurations (DASAN C&I, KR, 2005) that are now standard in advanced-node logic. IP analytics across this period reveal a shift from bulk hardware to process-level innovation.
The 2016–2022 Low-Temperature and Simulation-Driven phase introduced the 2017 and 2022 Plasma Roadmaps (University of Maryland and Osaka University respectively), signaling systematic self-assessment with new emphasis on additive manufacturing, quantum computing, and data-driven plasma science. Atmospheric-pressure plasma for energy and life science applications matured during this period.
The 2020–2025 Active Patent Filing era is defined by Japan Steel Works' active PEALD equipment (JP, 2020), LG Electronics' active PECVD apparatus (KR, 2013, still active), and Applied Materials' ribbon-beam PECVD system (KR, 2022 and 2025 continuation) — the most recently published filing in the dataset, confirming sustained commercial prosecution.
Plasma Deposition Innovation Signals at a Glance
Derived from patent and literature records in the PatSnap Eureka dataset. All values reflect data points extracted from source documents.
Application Domain Activity by Filing Volume
Semiconductor & Microelectronics is the largest application domain by filing volume in this dataset, followed by precision optics, photovoltaics, biomedical, and advanced materials.
Plasma Treatment Effect on PET Surface Roughness
Low-temperature plasma etching increased PET surface roughness from 1.74 nm to 19.10 nm, improving interfacial bond chemistry for micro-propulsion tape fabrication (Space Engineering University, Beijing, 2022).
Patent Activity by Plasma Deposition Sub-Domain
CCP-PECVD and PA-ALD dominate the device-level patent record; atmospheric and pulsed high-power techniques are underrepresented relative to their scientific momentum.
Key Active Patent Filings by Assignee & Year
Active deposition patents in the dataset span Japan Steel Works (2020), Applied Materials (2022, 2025), and LG Electronics (2013 — still active), illustrating sustained commercial IP prosecution.
Key Assignees in the Plasma Deposition Dataset
Korean patents constitute the largest share of device-level filings. Innovation in deposition apparatus is concentrated among a small number of large commercial players and specialized Korean SMEs, while process science is distributed across an international academic network.
| Assignee | Jurisdiction | Key Filing(s) | Period | Status |
|---|---|---|---|---|
| Applied Materials | KR, JP | Ribbon-Beam PECVD (2022, 2025 continuation); TEOS CVD (1994) | 1994–2025 | Active |
| Japan Steel Works, Ltd. | JP | Plasma ALD Equipment — insulator-enclosed upper electrode (2020) | 2020 | Active |
| LG Electronics | KR | PECVD Apparatus and Control Method (2013, two filings) | 2013 | Active |
| Samsung Electronics Co., Ltd. | KR | High-Density Plasma CVD Apparatus (2004); Plasma CVD Apparatus (1993) | 1993–2004 | Historical |
| IPS Co., Ltd. | KR | Cyclically Pulsed Two-Level Plasma ALD (2005, two filings) | 2005 | Historical |
| DASAN C&I Co., Ltd. | KR | Remote Plasma ALD Apparatus and Method (2005) | 2005 | Historical |
Map the Full Competitive Landscape
PatSnap Eureka surfaces assignee filing velocity, jurisdiction coverage, and citation networks across 2B+ data points.
Five Forward-Looking Signals from the 2019–2025 Dataset
Based on the most recent filings and publications in this dataset, these emerging directions signal where plasma assisted deposition technology is heading — and where IP whitespace exists.
Directed Radical Beam PECVD
Applied Materials' ribbon-beam PECVD architecture (KR, 2022/2025) uses a differential-pressure gradient to drive a spatially defined beam of free radicals from a high-pressure plasma source into a low-pressure process chamber. This offers unprecedented control over radical flux directionality, suggesting application to sub-3 nm logic and 3D NAND staircase structures where conformal and directional deposition must be balanced.
Atomistic Simulation-Guided PEALD Process Design
Monte Carlo / molecular dynamics simulation of PEALD combining real atomistic precursor models with steric hindrance and surface binding probability parameters (Friedrich Schiller University Jena, 2019) signals a shift toward computationally designed plasma ALD processes. The 2022 Plasma Roadmap explicitly identifies "data-driven plasma science" as a key new emphasis, suggesting AI/ML-assisted process optimization will accelerate.
What This Landscape Means for R&D and IP Teams
Applied Materials holds the most forward-dated active deposition patents in this dataset (ribbon-beam PECVD, KR 2022 and 2025 continuation), signaling sustained IP prosecution in directed radical flux architectures. R&D teams targeting advanced-node dielectric deposition should map freedom-to-operate carefully around differential-pressure beam reactor designs. PatSnap's IP analytics platform enables rapid FTO screening across these active filings.
PA-ALD remains the highest-growth sub-domain for atomic-scale semiconductor fabrication. The Eindhoven University review (2019) confirms PA-ALD's established position across logic, memory, and emerging quantum/AI hardware. The Japan Steel Works active PEALD patent (JP, 2020) and IPS Co., Ltd. pulsed two-level plasma ALD (KR, 2005) define a design space that teams entering advanced-node ALD equipment must navigate. Advanced materials teams can leverage Eureka to map this space.
Atmospheric-pressure plasma deposition is underserved in the patent record relative to its scientific momentum. APPJ precision figuring (China Academy of Engineering Physics, 2021) and APP photovoltaics (Ulster University, 2016) suggest a whitespace opportunity for apparatus IP in atmospheric-pressure, roll-to-roll, and open-air deposition platforms — particularly for flexible electronics and large-area energy devices.
Pulsed high-power plasma techniques (HiPP-PECVD, IPD, DPF) remain predominantly in academic literature with limited commercial patent activity in this dataset. This represents either an early-stage opportunity or a signal that these techniques face scalability barriers. IP strategists should monitor university spin-out activity in this space. PatSnap customers in deep-tech have used similar whitespace analysis to identify licensing opportunities ahead of commercialization.
Data-driven and simulation-guided process design is an emerging differentiator. As noted in the 2022 Plasma Roadmap and the Jena PEALD simulation work, teams that integrate atomistic process simulation and machine learning with reactor hardware will achieve faster process qualification cycles — a critical advantage as semiconductor customers demand shorter development timelines for new materials and node transitions. PatSnap's open API enables integration of patent intelligence directly into R&D workflows.
Plasma Assisted Deposition Technology — key questions answered
In this dataset, four principal sub-domains are identifiable: Plasma-Enhanced Chemical Vapor Deposition (PECVD), Plasma-Assisted / Plasma-Enhanced Atomic Layer Deposition (PA-ALD / PEALD), Atmospheric-Pressure Plasma Jet (APPJ) Processing, and Pulsed and High-Power Plasma Deposition (HiPP-PECVD, Impulse Plasma Deposition, Dense Plasma Focus).
Applied Materials holds the most forward-dated active deposition patents in this dataset (ribbon-beam PECVD, KR 2022 and 2025 continuation), signaling sustained IP prosecution in directed radical flux architectures.
The ribbon-beam PECVD architecture — where a differential-pressure gradient drives a spatially defined beam of free radicals from a high-pressure plasma source into a low-pressure process chamber — represents the most recently filed active patent in this dataset. This approach offers unprecedented control over radical flux directionality, suggesting application to sub-3 nm logic and 3D NAND staircase structures where conformal and directional deposition must be balanced.
The principal application domains include: Semiconductor and Microelectronics (the largest by filing volume), Precision Optics and High-Power Lasers, Photovoltaics and Energy Materials, Biomedical and Surface Functionalization, and Advanced Materials and Nanotechnology.
Korean patents constitute the largest share of device-level filings in this dataset. Key assignees include Samsung SDI Co., Ltd., LG Electronics, Applied Materials (Korean filings), IPS Co., Ltd., DASAN C&I Co., Ltd., and Samsung Electronics Co., Ltd. Japan represents foundational and mid-stage contributions through Japan Steel Works, Toshiba Corporation, Shimadzu Corporation, and Sumitomo Metal Industries. Applied Materials is the dominant US-headquartered assignee. European academic institutions lead in process understanding and roadmapping.
Atmospheric-pressure plasma deposition is underserved in the patent record relative to its scientific momentum. APPJ precision figuring (China Academy of Engineering Physics, 2021) and APP photovoltaics (Ulster University, 2016) suggest a whitespace opportunity for apparatus IP in atmospheric-pressure, roll-to-roll, and open-air deposition platforms — particularly for flexible electronics and large-area energy devices.
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References
- Status and Prospects of Plasma-Assisted Atomic Layer Deposition — Eindhoven University of Technology, 2019
- The 2022 Plasma Roadmap: Low Temperature Plasma Science and Technology — Osaka University, 2022
- Recent Advances in Atmospheric-Pressure Plasma Technology — "Petru Poni" Institute, 2022
- High-Accuracy Surface Topography Manufacturing for Continuous Phase Plates Using APPJ — China Academy of Engineering Physics, 2021
- TEOS Plasma CVD Method — Applied Materials Inc., 1994, JP
- High Power Pulsed Plasma Enhanced Chemical Vapor Deposition — Université Paris Sud-XI / CNRS, 2013
- Remote Plasma Atomic Layer Chemical Vapor Deposition Apparatus and Method — DASAN C&I Co., Ltd., 2005, KR
- Cyclically Pulsed Two Level Plasma Atomic Layer Deposition Apparatus and Method — IPS Co., Ltd., 2005, KR
- Plasma Atomic Layer Deposition Equipment — Japan Steel Works, Ltd., 2020, JP (active)
- Ribbon Beam Plasma-Enhanced Chemical Vapor Deposition System — Applied Materials Inc., 2022, KR (active)
- Ribbon Beam Plasma Enhanced Chemical Vapor Deposition System (Continuation) — Applied Materials Inc., 2025, KR (active)
- High Density Plasma Apparatus for Thin Film Deposition — Samsung Electronics Co., Ltd., 2004, KR
- Impulse Plasma in Surface Engineering — A Review — DORAPS / Polish Academy of Sciences, 2014
- Dense Plasma Focus — From Alternative Fusion Source to Versatile High Energy Density Plasma Source — Nanyang Technological University, 2015
- Low-Temperature Atmospheric Pressure Plasma Processes for "Green" Third Generation Photovoltaics — Ulster University, 2016
- Application of Plasma Technology in Bioscience and Biomedicine — Technological University Dublin, 2021
- Interface Adhesion Property and Laser Ablation Performance of GAP-PET Double-Layer Tape with Plasma Treatment — Space Engineering University, Beijing, 2022
- The 2017 Plasma Roadmap: Low Temperature Plasma Science and Technology — University of Maryland, 2017
- Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition — Friedrich Schiller University Jena, 2019
- Plasma Enhanced Chemical Vapor Deposition Apparatus and Method for Controlling the Same — LG Electronics, 2013, KR (active)
- World Intellectual Property Organization (WIPO) — Global Patent Database
- European Patent Office (EPO) — Patent Information and Search
- IEEE — Plasma Science and Technology Publications
All data and statistics on this page are sourced from the references above and from PatSnap's proprietary innovation intelligence platform. This landscape is derived from a limited set of patent and literature records retrieved across targeted searches and represents a snapshot of innovation signals within this dataset only.
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