Superjunction Power MOSFET Patents: Leaders & Filing Trends 2026
A data-backed look at superjunction power MOSFET patents: who holds the core claims, how filing has trended since a 2018 peak, and where circuit-level white space remains.
Filing growth = 2021 (2 records) → 2024 (1); 2024 is the last year we treat as complete. Top-5 share = the 5 largest assignees ÷ all 54 records in scope (CR5), not the ranked leaders only.
What this landscape covers
Superjunction power MOSFETs use alternating, deeply-doped pillar regions to balance charge across the drift layer, allowing a device to hold high breakdown voltage without the usual penalty in on-resistance. This landscape draws on 54 published records filed between 2015 and the 2026 data cut-off, spanning device structure claims, reverse-recovery and body-charge control, integrated Schottky variants, and a small set of radiation-hardened designs.
Filing is concentrated among a small set of established semiconductor makers, with the United States as the dominant receiving office. The claim space is dense on core device geometry and comparatively open on the drive-circuit and control-logic side, which is where later entrants have room to differentiate.
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Filing trends and technology composition
The 54 records in scope span 2015 through the partial-year 2026 cut-off, concentrated overwhelmingly in semiconductor device structure classes rather than circuit or logic classes.
A 2018 peak followed by a thinner, still-active tail
Filings peaked at 5 in 2018; by the last complete year, 2021's count of 2 had fallen to 1 in 2024, a -50% move over that span. 2025 and 2026 figures are not yet reliable given the roughly 18-month lag between filing and publication, so this should not be read as a technology in decline — only as a maturing, lower-volume filing pace.
Publication lags filing by roughly 18 months, so 2025 onwards are still filling in. Growth rates on this page therefore end at 2024; running them to the last bar would understate the field.
Device structure claims dominate over circuit-level claims
H01L covers 94.4% of the 54 records and H10D covers 63.0%, confirming that most activity claims the semiconductor device structure itself. H03K and H10P — pulse technique and logic-adjacent classes — each appear in only 1.9% of records, marking drive and control circuitry as a comparatively open branch.
Shares are the percentage of the 54 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
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Try EurekaThe claims setting the boundaries of this field
Superjunction power MOSFET — US7602014B2
An embodiment of an MOS device includes a semiconductor substrate of a first conductivity type, a first region of the first conductivity type having a defined length and net active dopant concentration, a pair of spaced-apart body regions of the second, opposite conductivity type each with their own defined length and dopant concentration, channel regions located in the body regions, source regions in the body regions separated from the first region by the channel regions, and an insulated gate overlying the channel regions and the first region.Granted to North Star Innovations Inc., 2009-10-13 — the structural baseline that several later, more heavily cited families build on or route around.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20110073906A1 | High voltage MOSFET diode reverse recovery by minimizing P-body charges | 71 |
| 2 | US20110278650A1 | Power semiconductor device | 50 |
| 3 | US20110049564A1 | Integrated schottky diode in high voltage semiconductor device | 50 |
| 4 | US20140124851A1 | Radiation-Hardened Power Semiconductor Devices and Methods of Forming Them | 39 |
| 5 | US20140138737A1 | High voltage mosfet diode reverse recovery by minimizing p-body charges | 32 |
| 6 | EP1794799A1 | Semiconductor device and method of forming a semiconductor device | 28 |
| 7 | US10103257B1 | Termination design for trench superjunction power MOSFET | 19 |
| 8 | US20150097237A1 | Power semiconductor device | 19 |
| 9 | US20130087852A1 | Edge termination structure for power semiconductor devices | 18 |
| 10 | US20210320202A1 | Super Shielded Gate Trench MOSFET Having Superjunction Structure | 15 |
Ranked by citation count within the 54 records in scope; citation counts favour older records and should be read as a signal of influence, not of current commercial weight.
Each row carries its publication number; clicking a row searches Eureka by that number.
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Three findings matter most for anyone deciding where to file or where to look for freedom to operate in superjunction power MOSFETs.
A small group controls most of the claim space
With the leader alone holding 7 records and the top 10 combined covering 85.2% of all 54 records in scope, new entrants are filing into territory already staked out by a handful of established semiconductor makers.
Device structure claims crowd out circuit-level claims
H10D adds a further 63.0% of records on top of the H01L share, while H03K and H10P — control and logic-adjacent classes — sit at just 1.9% each, marking the clearest under-claimed branch in this dataset.
Volume has thinned since the 2018 peak
Peak-year filings of 5 in 2018 gave way to a measured decline through the last reliable comparison year; 2025-2026 counts are not yet complete because publication trails filing by about 18 months.
Filing is US-centric with a thin international tail
Korea (6), WIPO (4), Europe (3), Taiwan (2) and Austria (1) together trail the US total by a wide margin, pointing to lighter competitive density for filers moving first outside the US.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to power semiconductors: superjunction power mosfet patent landscape, with the prior art for and against each one.
| Assignee | Co-assignee | Shared families |
|---|---|---|
| GUAN LINGPENG | BOBDE MADHUR | 3 |
| Freescale Semiconductor | QIN GANMING | 2 |
| Freescale Semiconductor | DE FRESART EDOUARD D | 2 |
| Freescale Semiconductor | BAIRD ROBERT W | 2 |
| GUAN LINGPENG | ZHU TINGGANG | 2 |
| GUAN LINGPENG | BHALLA ANUP | 2 |
| BOBDE MADHUR | ZHU TINGGANG | 2 |
| BOBDE MADHUR | BHALLA ANUP | 2 |
The strongest co-assignee pairing in this dataset, Guan Lingpeng and Bobde Madhur, appears together on 3 records, alongside two other repeated pairings each on 2 records — a sign of sustained, team-level iteration on specific claim families rather than one-off filings.
Where to take this analysis next
The figures here describe the field as a whole. Narrowing to a specific claim, assignee or jurisdiction is where filing and freedom-to-operate decisions actually get made.
Check freedom to operate on a specific structure
Run the exact charge-balance ratio, gate architecture or doping profile you plan to claim against the most-cited families in this dataset before drafting.
Open Eureka to run an FTO checkTrack the assignees building around body-charge claims
Follow the co-filing pattern behind the reverse-recovery and integrated-Schottky families to see which teams are actively extending, not just defending, their claim positions.
Monitor these assignees in EurekaDraft into the circuit-level white space
Gate-drive and reverse-recovery-sensing logic tied to the superjunction cell is largely unclaimed relative to the device-structure classes — a first claim there faces far less prior art.
Draft and search that claim in EurekaFrequently asked questions
Within the 21 companies in this ranking, the leader holds 7 of the 54 records in scope, with the fifth-placed company at 4 and the tenth at 3. The top 5 combined account for 51.9% of all 54 records and the top 10 combined account for 85.2%, so filing activity is concentrated among a small group of established semiconductor makers rather than spread evenly across many entrants. This is not a top-100 list — it is the full ranking the dataset returns, so the concentration figures describe the entire field, not a sampled subset.
Filings peaked at 5 in 2018 and, using 2021 (2 filings) to 2024 (1 filing) as the last reliable comparison, activity moved -50% over that span. Because publication lags filing by roughly 18 months, 2025 and 2026 counts in any raw chart will look artificially low and should not be read as a further drop. The honest read is a maturing filing rate off an earlier peak, not an accelerating or a collapsing one.
Almost all records — 94.4% of the 54 in scope — sit in IPC class H01L (semiconductor devices), with 63.0% also carrying the more specific H10D subclass. A small number of records extend into H03K (pulse technique and logic circuits) and H10P, each at 1.9% of records, covering drive and control-circuit aspects rather than the device structure itself. Because a single record can carry more than one class, these shares add up to more than 100%, which is expected.
US7602014B2, assigned to North Star Innovations and granted 2009-10-13, claims a specific superjunction MOS geometry: a first-conductivity-type region with a defined length and dopant concentration, paired spaced-apart body regions of opposite conductivity with their own length and concentration, channel regions inside those body regions, and an insulated gate overlying both. It blocks devices matching that specific length-and-concentration relationship between drift and body regions. It does not block designs using a different charge-balance ratio, a different gate architecture, or an added Schottky element, which is where several of the more heavily cited later families in this dataset staked their own claims.
The clearest gap is circuit-level integration around the device rather than the device structure itself: H03K and H10P classes each cover only 1.9% of the 54 records, against 94.4% for H01L. Geographically, filings concentrate in the United States (36 of 54), with Korea, WIPO, Europe, Taiwan and Austria carrying much smaller shares, suggesting room for early non-US filings on drive-circuit or protection-logic claims tied to the superjunction cell. Teams looking for open claim space should look at gate-drive and reverse-recovery-sensing logic rather than at the core cell geometry, which is already densely claimed.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.