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Run your analysis now →https://www.patsnap.com/resources/blog/rd-blog/power-semiconductors-trench-sic-mosfet-patent-landscape-patent-landscape/ · Patsnap · data cut-off 2026-07-31 · downloaded from the live page
Power Semiconductors · Patent LandscapeTrench SiC MOSFET patents: who holds the claim space and where it is still open
15
Published Records
67%
Top-5 Share of All Records
CN
Leading Jurisdiction
11
Active Filers Ranked
Top-5 share is the combined record count of the five largest assignees divided by all 15 records in scope (CR5), not by the ranked leaders only.
Published byPatsnap Research··6 min readSourced from Patsnap Eureka
Field Overview
What the trench SiC MOSFET patent record actually shows
Trench-gate architectures are one of the two dominant approaches to silicon carbide power MOSFETs, competing against planar designs for lower on-resistance and better channel mobility. The 15 records in scope span 2015 through the current data cut-off, concentrated almost entirely in the last few years of that window. This is a young, small corpus: filing density here reflects who has staked a claim, not how mature or commercially proven the technology is.
The assignee ranking returns 11 companies, with a leader holding four records and a long tail of single-filing entrants filling out the rest. Reading raw counts alongside receiving-office data matters here — a filing lodged only in China does not carry the same enforcement reach as one also filed at the EPO, USPTO or via WIPO.
Filing trend and technology composition, 2015–2026
Source: Patsnap Eureka. Assignee ranking and totals. Derived from a Patsnap search on Power Semiconductors: Trench SiC MOSFET Patent Landscape covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
The Data
Filing trend and technology composition
Two views of the same 15 records: when they were filed, and which IPC subclasses they carry. Because a record can sit in more than one subclass, the composition shares add up to more than 100%.
Filing activity is still forming
The trend runs from zero in 2017 to a peak of five records in 2023, then falls off toward the present. With so few complete years once the roughly 18-month publication lag is accounted for, no growth rate can be reliably stated from this window — the most recent years will fill in as later publications land.
Claim activity sits in two core subclasses
H01L (semiconductor devices) and H10D (semiconductor devices, general) each cover 66.7% of the 15 records, with H10P present in 33.3%. The overlap between H01L and H10D reflects the reclassification of semiconductor device art rather than two distinct technical clusters — most records claiming trench SiC MOSFET structures sit in both.
Shares are the percentage of the 15 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Source: Patsnap Eureka. Filing trend and technology composition. Derived from a Patsnap search on Power Semiconductors: Trench SiC MOSFET Patent Landscape covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.
Go deeper on Power Semiconductors: Trench SiC MOSFET Patent Landscape with Eureka
This page is one run against one query. Ask Eureka your own question about power semiconductors: trench sic mosfet patent landscape and every answer comes back with the patent numbers behind it.
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The most-cited records and a representative claim
Representative Filing
US20240266404A1 — Trench SiC MOSFET Integrated with High-speed Flyback Diode
NOVUS SEMICONDUCTORS CO., LTD.
A trench SiC MOSFET integrated with a high-speed flyback diode and a preparation method thereof are provided. The MOSFET is a trench structure, a trench-type gate-controlled diode is added in the vicinity of the MOSFET to solve the problem of electric field concentration at the bottom and corners of a trench, and P-type buried layers are added to the bottom of the trench to decrease the electric field intensity. Moreover, the gate-controlled diode and a body diode of the device are connected in parallel, so the on-voltage drop of the body diode is greatly decreased, thus reducing the loss in the reverse recovery mode.Filed by Novus Semiconductors Co., Ltd., published 2024-08-08. One of only two records in this dataset reaching the US receiving office.
Most-cited records in this dataset
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | CN111081759A | 一种增强型碳化硅MOSFET器件及其制造方法 | 17 |
| 2 | CN114883413A | 一种在元胞内集成续流二极管的沟槽SiC MOSFET | 10 |
| 3 | CN115528090A | 一种双沟槽SiC MOSFET器件 | 7 |
| 4 | WO2014102994A1 | Silicon-carbide semiconductor device and manufacturing method therefor | 6 |
| 5 | CN119451182A | 一种具有低电阻与密勒电容的新型非对称沟槽SiC MOSFET器件 | 2 |
| 6 | CN119325249A | 一种集成反向续流二极管的沟槽SiC MOSFET器件及其制备方法 | 1 |
Citation counts favour older publications simply because they have had longer to accumulate citations inside the searched corpus — treat this as a signal of influence on later filings, not of current commercial importance.
Patent titles are shown in the language they were filed in, not translated, so that each record stays verifiable against the original filing — a translated title will not match in Eureka or in any national register. Publication numbers are shown where the record carries one (6 of 6 rows); clicking a row searches Eureka by that number.
Source: Patsnap Eureka. Citation counts and representative records. Derived from a Patsnap search on Power Semiconductors: Trench SiC MOSFET Patent Landscape covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
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What the numbers mean for a filing decision
Four figures from this dataset carry direct implications for where to file, who to watch, and what technical ground is still open.
Concentration
66.7%
of 15 records held by top 5 assignees
A short leaderboard, not a crowded field
With a leader at four records and only 11 companies in the ranking at all, this is a field where a handful of filers have staked most of the claim space early. The top 10 combined account for 100.0% of all 15 records — there is effectively no long tail beyond the ranked group.
Watch the leader's continuation filings closely.
Venue
10 of 15
records filed in China
Filing venue skews heavily domestic
China accounts for 10 of the 15 records, against 2 each at the EPO and USPTO and 1 via WIPO. A freedom-to-operate review that stops at the USPTO or EPO will miss most of the documented claim activity in this space.
Cross-check Chinese-language filings before committing to a device architecture.
Technology
33.3%
of records carry H10P
One subclass sits apart from the core pair
H01L and H10D each cover two-thirds of the 15 records and largely overlap, but H10P appears in only a third — a smaller, more distinct cluster worth checking separately when mapping claims against a specific device design.
Treat H10P claims as a separate search pass, not a subset of H01L.
Timing
2023 peak
5 records, most recent year of activity
The trend is too young to call
Filings rise from zero in 2017 to a peak of five in 2023, with the most recent years understated by publication lag. No growth rate can honestly be stated from this window; treat the 2023 peak as the latest complete signal, not the end of the story.
Recheck this trend once another 12-18 months of publications land.
Eureka AI Agent
Looking for what nobody has claimed yet?
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to power semiconductors: trench sic mosfet patent landscape, with the prior art for and against each one.
Source: Patsnap Eureka. Co-assignee relationships and derived observations. Derived from a Patsnap search on Power Semiconductors: Trench SiC MOSFET Patent Landscape covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
What's Next
Where to take this analysis
The dataset points to specific next steps for teams evaluating trench SiC MOSFET freedom-to-operate or filing strategy.
Map claims against the leader's portfolio
With one assignee holding four of the 15 records, a claim-by-claim comparison against that portfolio is the fastest way to find out whether a planned trench structure sits inside or outside their coverage.
Explore in EurekaPressure-test the China filing venue
Ten of the 15 records were filed in China alone. Any FTO review limited to US or EPO search tools will miss most of the documented prior art in this specific architecture.
Run a China-first search in EurekaTrack the H10P cluster separately
The smaller, more distinct H10P subclass covers a third of records and may represent a narrower technical niche worth its own claim chart rather than folding it into the broader H01L/H10D review.
Build a subclass-specific alertSource: Patsnap Eureka. Forward-looking reading of the same dataset. Derived from a Patsnap search on Power Semiconductors: Trench SiC MOSFET Patent Landscape covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
FAQ
Common questions about trench SiC MOSFET patents
The assignee ranking in this dataset returns 11 companies across 15 records, with a single leader holding four filings. The top five assignees combined account for 66.7% of all 15 records, and the top ten together cover 100.0% — meaning there is essentially no long tail of filers beyond the ranked group. This is a small, young field where a handful of organisations, spanning both specialist semiconductor firms and university research groups, have staked most of the documented claim space.
Of the 15 records in this dataset, 10 were filed in China, compared with 2 each at the EPO and USPTO and 1 through WIPO. This likely reflects both the concentration of SiC device manufacturing and research activity in China and the fact that several assignees here are Chinese universities and materials companies filing primarily for domestic protection. Anyone assessing freedom-to-operate risk should not rely on US or European searches alone; the Chinese-language filings carry the bulk of the documented prior art.
Filings rose from zero in 2017 to a peak of five records in 2023, but the dataset does not cover enough complete years to support a stated growth rate, especially once the roughly 18-month lag between filing and publication is taken into account. The most recent year in the window is understated because many of its filings have not yet published. Treat 2023 as the latest reliable data point rather than assuming the trend has already turned down.
US20240266404A1, filed by Novus Semiconductors, covers a trench SiC MOSFET integrated with a high-speed flyback diode, using a trench-type gate-controlled diode near the MOSFET and P-type buried layers at the trench bottom to reduce electric field concentration and reverse-recovery loss. It is one of only two records in this dataset reaching the US receiving office, which gives it more practical enforcement reach in that jurisdiction than most of the China-only filings. Anyone designing a trench structure with an integrated flyback diode and similar field-management layers should review this filing's claims specifically before finalising a device architecture.
The IPC composition shows H01L and H10D each covering 66.7% of the 15 records with heavy overlap, while H10P appears in only 33.3% — a smaller, more distinct cluster. Combined with a filing venue that is 10 of 15 China-only and a co-assignee network with only one documented pairing, this suggests limited cross-institution collaboration and a narrower set of claimed variations than the raw record count might imply. Branches adjacent to the dominant field-management and integrated-diode approaches, particularly in the H10P cluster, appear less densely claimed.
Answers are grounded in the same dataset. Derived from a Patsnap search on Power Semiconductors: Trench SiC MOSFET Patent Landscape covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company's registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.