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Run your analysis now →Filing growth compares 2021 (133 records) with 2024 (94) — a three-year span. 2024 is the most recent year we treat as complete: publication lags filing by roughly 18 months, so 2025 onwards are still filling in and any growth rate that ends there would understate the field. Top-5 share is the combined record count of the five largest assignees divided by all 1,833 records in scope (CR5), not by the ranked leaders only.
This landscape tracks patent activity in selective etching and material removal — the family of processes used to strip, thin or release specific layers (silicon-germanium, hard masks, sacrificial material) without disturbing adjacent structures. It spans isotropic and gas-phase etch chemistry, nanosheet release, lateral etch control, residue management after release, loading-effect mitigation and stiction risk in released structures. The scope runs from 2015 through the 2026-07-31 cut-off, covering 1,833 published records.
Because publication trails filing by roughly 18 months, the most recent one to two years in any trend understate true filing activity — treat 2025 and 2026 as still filling in rather than as a genuine slowdown.
Pick a task. Every answer cites the patents behind it.
Two views of the same 1,833-record dataset: how filing volume has moved year over year, and which IPC subclasses carry the claims.
Volume rose from 112 records in 2017 to a peak of 133 in 2021, then declined 29% to 94 by 2024, the last year the data can be treated as complete. Later years are present in the dataset but still understated by publication lag.
H01L (semiconductor devices) covers 78.3% of the 1,833 records, with H10D, H10P and H10B forming a secondary cluster tied to memory and general device manufacture. B81C (MEMS manufacturing) and H03H (impedance networks and filters) are smaller but distinct claim territories — records can and do carry multiple classes, so these shares sum to well over 100%.
Shares are the percentage of the 1,833 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
This page is one run against one query. Ask Eureka your own question about selective etch and material removal and every answer comes back with the patent numbers behind it.
Try EurekaA method of forming photomasks that combines dry anisotropic etching around pattern elements needing tight critical-dimension control with wet isotropic etching for the remaining opaque material, balancing throughput, defect control and CD accuracy across different regions of the same mask.Filed by Taiwan Semiconductor Manufacturing Company, published 2004-12-14.


| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US4749440A | Gaseous process and apparatus for removing films from substrates | 655 |
| 2 | US5242539A | Plasma treatment method and apparatus | 604 |
| 3 | US7323401B2 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask | 579 |
| 4 | US20060264060A1 | Low temperature plasma deposition process for carbon layer deposition | 559 |
| 5 | US20060260545A1 | Low temperature absorption layer deposition and high speed optical annealing system | 550 |
| 6 | US7109098B1 | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption… | 550 |
| 7 | US7312162B2 | Low temperature plasma deposition process for carbon layer deposition | 543 |
| 8 | US7429532B2 | Semiconductor substrate process using an optically writable carbon-containing mask | 538 |
| 9 | US20070032082A1 | Semiconductor substrate process using an optically writable carbon-containing mask | 538 |
| 10 | US7312148B2 | Copper barrier reflow process employing high speed optical annealing | 536 |
Citation counts are drawn from within this searched corpus and favour older, foundational filings — read them as a signal of influence, not of current commercial importance.
Each row carries its publication number; clicking a row searches Eureka by that number.
When you want the answer in the next five minutes.
The agent works the prompt against patents and technical literature, citing every source.
Run your analysis now →When it has to run inside your own pipeline.
Patent search, landscape analysis and assignee resolution as MCP tools. Drop them into any agent framework, or call REST directly.
Browse MCP servers →Three read-outs from the dataset that matter more than the raw counts: where claim density sits, how fast the field is still moving, and where citation influence concentrates.
The five leading assignees account for 797 of the 1,833 records in scope, and the top ten push that to 54.9%. New entrants filing in the core H01L etch-release space are filing directly into occupied ground.
Filing peaked in 2021 and had fallen 29% by 2024, the most recent year the trend can be read as complete. Years after 2024 are still filling in under publication lag, so this is a real pullback from peak, not evidence the field has stopped moving.
The most-cited records in this corpus, including US4749440A and US5242539A, date from earlier plasma and gas-phase film-removal work. Their citation counts reflect decades of accumulated reference, not present-day filing activity.
The United States receives more than eleven times the filings of the next-largest office pairing (WIPO PCT and EPO, each near 116-117). Japan, Germany and Australia carry smaller but present volumes worth checking for regional freedom-to-operate.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to selective etch and material removal, with the prior art for and against each one.
The ranked list covers 100 companies, counted by records in scope — not a curated top-50 or top-100, but the full set the data endpoint returns. A handful of equipment and device makers dominate, but their recent-year filing pace has slowed sharply.
The leading assignee's 458 records dwarf the fifth-place total of 56, a steep drop-off that marks this as a field with one dominant claim-holder rather than a flat competitive spread.
The top-ranked assignee filed only 3 records in the latest year, down 93% year over year; several other leading filers show zero latest-year filings. Given publication lag, this signals a filing pause worth tracking rather than a confirmed exit.
Only 10 co-assignee pairs appear in the dataset. The strongest pair, an IBM-GlobalFoundries link at 16 joint records, reflects a foundry-partner relationship rather than a broad industry pattern of joint filing.
| Assignee | Recent year | YoY |
|---|---|---|
| Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC) | 3 | -93% |
| International Business Machines Corporation (IBM) | 0 | — |
| Samsung Electronics Co., Ltd. | 0 | -100% |
| Applied Materials, Inc. | 0 | -100% |
| Qxonix Inc. | 0 | -100% |
| Toshiba Corporation | 0 | — |
| Tokyo Electron Ltd. | 0 | -100% |
| Robert Bosch GmbH | 0 | — |
The landscape points to a field with heavy claim density at the core and a pulled-back but not abandoned top tier. Two directions follow from that.
With 54.9% of all 1,833 records held by ten filers, any new selective-etch or nanosheet-release claim should be checked against that concentrated set first, not just the single leader.
Run a freedom-to-operate scan in EurekaB81C and H03H carry far fewer records than H01L's 78.3% share, which may mean faster prior-art clearance for claims that sit closer to MEMS integration or impedance-tuned etch control.
Explore white space in EurekaOne assignee leads the field with 458 of the 1,833 records in scope, well ahead of the fifth-ranked filer at 56. The top five filers combined hold 43.5% of all records, and the top ten hold 54.9%, so the field is concentrated among a small group of semiconductor equipment and device makers rather than spread evenly. Anyone assessing competitive position should check both the single leader and this wider top-ten group, since freedom-to-operate risk is not limited to just the top name.
Filing peaked in 2021 at 133 records and had fallen 29% to 94 by 2024, the most recent year the trend can be treated as complete. That is a real pullback from peak, but it is not evidence the field has stopped: publication lags filing by roughly 18 months, so 2025 and 2026 figures in any dataset will always look artificially low and should not be read as a continued decline until later data fills in.
US6830853B1, assigned to Taiwan Semiconductor Manufacturing Company, claims a photomask-forming method that pairs dry anisotropic etching around pattern elements needing tight critical-dimension control with wet isotropic etching for the remaining opaque material. It is specific to combining these two etch modes within a single mask-patterning workflow, so it primarily constrains photomask fabrication approaches that mix anisotropic and isotropic steps for CD control and defect reduction, not selective etch chemistry generally. New filings on nanosheet release or gas-phase silicon-germanium removal outside mask fabrication sit outside this claim's direct path, but any mask-process claim mixing etch modes for CD versus defect trade-offs should be checked against it.
H01L (semiconductor devices) dominates, appearing in 78.3% of the 1,833 records in scope. H10D, H10P and H10B form a secondary cluster tied to general and memory device manufacture, each in the 10-24% range. Smaller but distinct classes, B81C for MEMS manufacturing and H03H for impedance networks and filters, sit in the 5-8% range and represent comparatively thinner claim territory relative to the core semiconductor-device classes.
The IPC composition shows a heavy concentration in H01L-family semiconductor device classes and comparatively thin coverage in B81C (MEMS manufacturing) and H03H (impedance networks and filters). Combined with a top-tier filing pace that has slowed sharply in the latest year across nearly every leading assignee, this suggests less-contested ground in claims that integrate selective etch release techniques into MEMS structures or impedance-tuned components, rather than filing directly into the dense H01L core where the leading assignees already hold the most records.
Go past this page: query the whole selective etch and material removal corpus yourself, in your own scope.
Every answer comes back with patent numbers you can open.
Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company's registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.
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