https://www.patsnap.com/resources/blog/rd-blog/selective-etch-and-material-removal-patent-landscape/ · Patsnap · data cut-off 2026-07-31 · downloaded from the live page
Patent Landscape · Etch Processes
Selective Etch and Material Removal Patents: Filing Trends and Claim Concentration
  • Concentrated at the top. The five leading filers hold 43.5% of all 1,833 records in scope, and the top ten hold 54.9% — well over half the field sits with a small group of equipment and device makers.
  • Filing has cooled off its 2021 peak. Volume ran from 112 records in 2017 to a peak of 133 in 2021, then fell 29% to 94 by 2024 — the last year the trend can be read as complete.
  • H01L dominates, but the IPC spread is wide. 78.3% of records sit in H01L alone, yet MEMS manufacturing (B81C) and impedance networks (H03H) each carry a meaningful, separately-claimed slice worth checking before filing.
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1,833
Published Records
43%
Top-5 Share of All Records
-29%
Filing Growth 2021→2024
US
Leading Jurisdiction

Filing growth compares 2021 (133 records) with 2024 (94) — a three-year span. 2024 is the most recent year we treat as complete: publication lags filing by roughly 18 months, so 2025 onwards are still filling in and any growth rate that ends there would understate the field. Top-5 share is the combined record count of the five largest assignees divided by all 1,833 records in scope (CR5), not by the ranked leaders only.

Published byPatsnap Research··7 min readSourced from Patsnap Eureka
Overview

What this landscape covers

This landscape tracks patent activity in selective etching and material removal — the family of processes used to strip, thin or release specific layers (silicon-germanium, hard masks, sacrificial material) without disturbing adjacent structures. It spans isotropic and gas-phase etch chemistry, nanosheet release, lateral etch control, residue management after release, loading-effect mitigation and stiction risk in released structures. The scope runs from 2015 through the 2026-07-31 cut-off, covering 1,833 published records.

Because publication trails filing by roughly 18 months, the most recent one to two years in any trend understate true filing activity — treat 2025 and 2026 as still filling in rather than as a genuine slowdown.

Filing activity and technology composition, 2017–2026
  1. 1TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD458
  2. 2SAMSUNG ELECTRONICS CO LTD132
  3. 3INTERNATIONAL BUSINESS MACHINE CORPORATION86
  4. 4APPLIED MATERIALS INC65
  5. 5ROBERT BOSCH GMBH56
  6. 6QXONIX INC55
  7. 7TOKYO ELECTRON LTD47
  8. 8KK TOSHIBA42
  9. 9GOOGLE LLC34
  10. 10GLOBALFOUNDRIES US INC31
Source: Patsnap Eureka. Assignee ranking and totals. Derived from a Patsnap search on Selective Etch and Material Removal covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP

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The Data

Filing trend and technology composition

Two views of the same 1,833-record dataset: how filing volume has moved year over year, and which IPC subclasses carry the claims.

Filing trend, 2017-2026

Volume rose from 112 records in 2017 to a peak of 133 in 2021, then declined 29% to 94 by 2024, the last year the data can be treated as complete. Later years are present in the dataset but still understated by publication lag.

Filing trend, 2017-20260387511315011220172018201920201332021202220232024202542026Most recent year is partial — publication lag means later filings are not yet visible.

IPC subclass composition

H01L (semiconductor devices) covers 78.3% of the 1,833 records, with H10D, H10P and H10B forming a secondary cluster tied to memory and general device manufacture. B81C (MEMS manufacturing) and H03H (impedance networks and filters) are smaller but distinct claim territories — records can and do carry multiple classes, so these shares sum to well over 100%.

IPC subclass compositionH01L · Semiconductor devices1,43678.3%H10D · Semiconductor devices (general)44024.0%H10P28115.3%H10B · Memory device manufacture19610.7%H10W1447.9%H10N · Other electric solid-state dev…1337.3%H03H · Impedance networks & filters915.0%B81C · MEMS manufacturing904.9%Other75941.4%

Shares are the percentage of the 1,833 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.

Source: Patsnap Eureka. Filing trend and technology composition. Derived from a Patsnap search on Selective Etch and Material Removal covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.

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Key Patents

Representative and most-cited filings

Representative Filing
US6830853B12004-12-14

US6830853B1 — Chrome mask dry etching process to reduce loading effect and defects

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY

A method of forming photomasks that combines dry anisotropic etching around pattern elements needing tight critical-dimension control with wet isotropic etching for the remaining opaque material, balancing throughput, defect control and CD accuracy across different regions of the same mask.Filed by Taiwan Semiconductor Manufacturing Company, published 2004-12-14.

US6830853B1 — patent drawing 1US6830853B1 — patent drawing 2
View full filing
Most-cited records in this landscape
#Publication no.Patent titleCitations
1US4749440AGaseous process and apparatus for removing films from substrates655
2US5242539APlasma treatment method and apparatus604
3US7323401B2Semiconductor substrate process using a low temperature deposited carbon-containing hard mask579
4US20060264060A1Low temperature plasma deposition process for carbon layer deposition559
5US20060260545A1Low temperature absorption layer deposition and high speed optical annealing system550
6US7109098B1Semiconductor junction formation process including low temperature plasma deposition of an optical absorption…550
7US7312162B2Low temperature plasma deposition process for carbon layer deposition543
8US7429532B2Semiconductor substrate process using an optically writable carbon-containing mask538
9US20070032082A1Semiconductor substrate process using an optically writable carbon-containing mask538
10US7312148B2Copper barrier reflow process employing high speed optical annealing536

Citation counts are drawn from within this searched corpus and favour older, foundational filings — read them as a signal of influence, not of current commercial importance.

Each row carries its publication number; clicking a row searches Eureka by that number.

Source: Patsnap Eureka. Citation counts and representative records. Derived from a Patsnap search on Selective Etch and Material Removal covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
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Insights

What the numbers mean for a filing decision

Three read-outs from the dataset that matter more than the raw counts: where claim density sits, how fast the field is still moving, and where citation influence concentrates.

Concentration
43.5%
of 1,833 records held by the top 5 filers

A small group holds nearly half the field

The five leading assignees account for 797 of the 1,833 records in scope, and the top ten push that to 54.9%. New entrants filing in the core H01L etch-release space are filing directly into occupied ground.

Top 5 vs top 10 concentration
Momentum
-29%
change 2021 → 2024 (133 → 94 records)

Volume has pulled back from its 2021 peak

Filing peaked in 2021 and had fallen 29% by 2024, the most recent year the trend can be read as complete. Years after 2024 are still filling in under publication lag, so this is a real pullback from peak, not evidence the field has stopped moving.

2021-2024 filing change
Citation base
655 citations
on the top-cited record, US4749440A

Foundational gas-phase and plasma patents anchor the citation graph

The most-cited records in this corpus, including US4749440A and US5242539A, date from earlier plasma and gas-phase film-removal work. Their citation counts reflect decades of accumulated reference, not present-day filing activity.

Citation counts within this corpus
Geography
1,343 filings
at the United States receiving office

Filing is heavily US-weighted, with PCT and EPO as secondary routes

The United States receives more than eleven times the filings of the next-largest office pairing (WIPO PCT and EPO, each near 116-117). Japan, Germany and Australia carry smaller but present volumes worth checking for regional freedom-to-operate.

Receiving office distribution
Eureka AI Agent
Looking for what nobody has claimed yet?

Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to selective etch and material removal, with the prior art for and against each one.

Find the white space →
Source: Patsnap Eureka. Co-assignee relationships and derived observations. Derived from a Patsnap search on Selective Etch and Material Removal covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
Players

Who is filing, and where the field is still open

The ranked list covers 100 companies, counted by records in scope — not a curated top-50 or top-100, but the full set the data endpoint returns. A handful of equipment and device makers dominate, but their recent-year filing pace has slowed sharply.

Leader
458 records
held by the top-ranked assignee

One filer holds close to a quarter of the field alone

The leading assignee's 458 records dwarf the fifth-place total of 56, a steep drop-off that marks this as a field with one dominant claim-holder rather than a flat competitive spread.

Leader vs 5th place
Momentum shift
-93% YoY
latest-year change at the top filer

Even the leader has pulled back sharply in the latest year

The top-ranked assignee filed only 3 records in the latest year, down 93% year over year; several other leading filers show zero latest-year filings. Given publication lag, this signals a filing pause worth tracking rather than a confirmed exit.

Recent-year momentum by assignee
Collaboration
16 co-filings
on the strongest co-assignee pair

Cross-entity filing exists but is limited to a few pairs

Only 10 co-assignee pairs appear in the dataset. The strongest pair, an IBM-GlobalFoundries link at 16 joint records, reflects a foundry-partner relationship rather than a broad industry pattern of joint filing.

Co-assignee pair strength
🔍
Under-claimed branches worth a closer look
Sub-areas where filing density is comparatively thin relative to the core H01L etch-release claims
MEMS-integrated selective release (B81C)impedance-network etch tuning (H03H)stiction-risk mitigation post-releasegas-phase loading-effect correctionresidue-after-release cleanup chemistry
Rank all filers by momentum →
Recent-year filing momentum by assignee
AssigneeRecent yearYoY
Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC)3-93%
International Business Machines Corporation (IBM)0—
Samsung Electronics Co., Ltd.0-100%
Applied Materials, Inc.0-100%
Qxonix Inc.0-100%
Toshiba Corporation0—
Tokyo Electron Ltd.0-100%
Robert Bosch GmbH0—
Source: Patsnap Eureka. Assignee-level momentum. Derived from a Patsnap search on Selective Etch and Material Removal covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
What's Next

Where to take this next

The landscape points to a field with heavy claim density at the core and a pulled-back but not abandoned top tier. Two directions follow from that.

Check freedom-to-operate against the top ten before drafting

With 54.9% of all 1,833 records held by ten filers, any new selective-etch or nanosheet-release claim should be checked against that concentrated set first, not just the single leader.

Run a freedom-to-operate scan in Eureka

Target the thinner IPC branches for faster clearance

B81C and H03H carry far fewer records than H01L's 78.3% share, which may mean faster prior-art clearance for claims that sit closer to MEMS integration or impedance-tuned etch control.

Explore white space in Eureka
Source: Patsnap Eureka. Forward-looking reading of the same dataset. Derived from a Patsnap search on Selective Etch and Material Removal covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
FAQ

Common questions on selective etch patents

Answers are grounded in the same dataset. Derived from a Patsnap search on Selective Etch and Material Removal covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP

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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.

Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company's registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.

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