Semiconductor Epitaxy Process Control Patents: Leaders & Trends 2026
- Filing has cooled since its 2021 peak. 14 families were filed in 2021 against a flat-to-declining count through the 2022 midpoint of 6, and the dataset's leading assignees show 0 filings and -100% YoY momentum in the latest full year.
- Claim activity concentrates in a narrow crystal-growth core. H01L accounts for 102 of 119 records and C30B for 50, meaning most protected ground sits at the intersection of device architecture and crystal growth rather than in adjacent measurement or metrology classes.
- The US is the dominant filing venue by a wide margin. 78 of the tracked records were filed at the USPTO, more than ten times the next-largest single office (China at 12), which concentrates freedom-to-operate risk in one jurisdiction.
What this landscape covers
Epitaxy process control covers the instrumentation, feedback loops and process models used to hold layer thickness, composition and defect density within specification while a semiconductor wafer is grown layer by layer. This landscape tracks 119 patent families filed between 2015 and mid-2026 that combine epitaxial growth or deposition language with process-control terms such as growth rate control, in-situ monitoring and defect density control, filtered to the crystal-growth and semiconductor-device IPC classes most likely to contain enforceable claims.
Because publication typically lags filing by around 18 months, the most recent one or two years in any trend chart will understate actual filing activity; treat the tail of the chart as a floor, not a ceiling. Family counts, rather than raw document counts, are used throughout so that continuation practice and multi-jurisdiction filing by the same applicant do not distort the ranking.
Filing trend and technology composition
Two views of the same 119 families: how filing volume has moved year over year, and which IPC subclasses carry the claim density.
Filing trend, 2017-2026
Filings rose from 4 in 2017 to a peak of 14 in 2021, then declined toward the 2022 midpoint of 6 and continued flat through the most recent (partial) year. This is a maturing filing curve, not a growing one, though the 2025-2026 tail is understated by publication lag.
IPC subclass distribution
H01L (semiconductor devices, 102 records) and C30B (crystal growth, 50 records) dominate; H10P (56), H10D (15) and H10B (8) reflect device-integration claims layered on top of the growth process itself. Measurement-specific classes G01B and G01J each hold only 5 records, a thin footprint relative to how central in-situ monitoring is to the search terms.
Shares are the percentage of the 119 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on Semiconductor Epitaxy Process Control with Eureka
This page is one run against one query. Ask Eureka your own question about semiconductor epitaxy process control and every answer comes back with the patent numbers behind it.
Try EurekaMost-cited prior art and a recent representative filing
Epitaxy Process Control in Semiconductor Manufacturing (US20250034753A1, Robert Bosch GmbH, filed 2025-01-30)
The application describes a run-to-run (R2R) controller that adjusts epitaxy process parameters between successive semiconductor components based on prior measurements and a process model. The model predicts a manipulated variable tied to process time and a controlled variable of layer thickness, and separately predicts a second controlled variable of specific resistance from a second manipulated variable.Abstract condensed from the original filing.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20140045324A1 | Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silan… | 390 |
| 2 | US6784085B2 | MIIIN based materials and methods and apparatus for producing same | 111 |
| 3 | US6313016B1 | Method for producing epitaxial silicon germanium layers | 104 |
| 4 | US6828632B2 | Stable PD-SOI devices and methods | 80 |
| 5 | US20200365687A1 | Nanosheet bottom isolation and source or drain epitaxial growth | 55 |
| 6 | WO2002097864A2 | Low temperature load and bake | 50 |
| 7 | US6444591B1 | Method for reducing contamination prior to epitaxial growth and related structure | 49 |
| 8 | DE19753494A1 | Silicon wafer especially SOI wafer production | 49 |
| 9 | US20120272892A1 | Metal-Organic Vapor Phase Epitaxy System and Process | 48 |
| 10 | US20140264384A1 | SiC SUBSTRATE WITH SiC EPITAXIAL FILM | 42 |
Citation counts inside a searched corpus skew toward older records simply because they have had more time to accumulate citations; read them as a signal of influence on the field, not as a measure of current commercial relevance.
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Three patterns stand out once filing volume, technology mix and geography are laid side by side.
Growth has flattened after a 2021 peak
The filing curve rose from 4 families in 2017 to a peak of 14 in 2021, then fell back to 6 by the 2022 midpoint and stayed flat into the most recent years. Several leading assignees show 0 filings and -100% YoY in the latest full year, consistent with a technology that has settled into incremental rather than expansive claim-building.
Claim density sits in device and crystal-growth classes
H01L and C30B between them touch the great majority of the 119 records, meaning process-control claims are mostly anchored to semiconductor device structure or bulk crystal growth rather than filed as standalone measurement or monitoring inventions.
Filing activity is concentrated at the USPTO
The United States receives roughly ten times the filings of the next single office (China, 12), with the UK, EPO, WIPO/PCT and Japan each in single digits. Freedom-to-operate diligence in this space cannot skip US prosecution history without missing most of the record.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to semiconductor epitaxy process control, with the prior art for and against each one.
Who holds ground, and where the gaps sit
The assignee list is a mix of established semiconductor equipment and device makers with a long tail of single-filing entrants; recent-year momentum has stalled across the named leaders tracked in this dataset.
Leading assignees have gone quiet in the latest year
Every named assignee in the recent-momentum data shows zero filings in the latest tracked year, including equipment and device manufacturers with substantial historical portfolios. This may reflect publication lag as much as an actual pause in R&D, since filings from the last 12-18 months are not yet fully visible.
Co-filing is rare in this corpus
Only 4 co-assignee pairs appear across 119 families, and the strongest pair links two organisations on just two shared filings. Most epitaxy process-control IP here is filed by a single owner rather than developed jointly, which is typical where the claimed subject matter sits close to in-house tool or process know-how.
One low-temperature SiGe epitaxy patent anchors the field
The most-cited record in the corpus concerns low-temperature epitaxy of silicon-germanium alloys using a high-order silane precursor, cited 390 times. Its influence, and that of the next several highest-cited records on SiGe layers and III-N materials, marks the compositional and material chemistry ground that later filers have had to design around.
| Assignee | Recent year | YoY |
|---|---|---|
| Applied Materials, Inc. | 0 | -100% |
| Taiwan Semiconductor Manufacturing Company (TSMC) | 0 | — |
| International Business Machines Corporation (IBM) | 0 | — |
| Ultratech, Inc. | 0 | — |
| Oxford Instruments Nanotechnology Tools Limited | 0 | — |
| Infineon Technologies Austria AG | 0 | — |
| ASM America, Inc. | 0 | — |
| Xidian University | 0 | — |
Where to take this
The dataset points to specific next steps depending on whether the goal is clearance, licensing or R&D targeting.
Run a freedom-to-operate check anchored on US filings
With 78 of roughly 110 receiving-office filings sitting at the USPTO, any product intended for the US market needs US prosecution history reviewed first, including the highest-cited SiGe and III-N chemistry patents.
Explore prior art in EurekaWatch for a filing rebound as the 2024-2026 lag clears
The apparent drop-off after 2021 partly reflects publication lag; re-check filing counts for 2024-2026 in twelve to eighteen months before concluding the field has genuinely slowed.
Track filing trends in EurekaTarget thin metrology and control classes for new claims
G01B and G01J each hold only 5 records against 102 in H01L, suggesting in-situ measurement and optical monitoring claims tied to epitaxy control remain comparatively open.
Map white space in EurekaCommon questions
It covers inventions that measure or adjust conditions during epitaxial growth or deposition to hit target layer thickness, composition or defect density, rather than the epitaxy chemistry itself. This dataset defines it as filings combining epitaxial growth or deposition language with process-control terms such as growth rate control, in-situ monitoring or defect density control, restricted to crystal-growth and semiconductor-device IPC classes. In practice that means run-to-run controllers, in-situ sensors and feedback loops sit inside scope, while pure material-composition claims for the epitaxial layer itself often sit outside it unless they are tied to a control step.
The corpus includes established semiconductor equipment and device manufacturers alongside a long tail of single-filing entrants, and the assignee ranking rendered on this page reflects family counts rather than raw publications. Recent-year momentum data shows the named leading assignees at zero filings in the latest tracked year, which is consistent with either a genuine slowdown or, more likely given an 18-month publication lag, filings that have not yet appeared. Co-filing between assignees is rare, with only 4 co-assignee pairs found across 119 families, so most of this IP is developed and filed by single owners.
Filing activity rose from 4 families in 2017 to a peak of 14 in 2021, then declined toward 6 by the 2022 midpoint and has stayed flat since. That pattern looks like a maturing filing curve rather than an expanding one, though the last one to two years of any trend chart are understated because publication typically lags filing by around 18 months. A fair read is that the technology's core claim space filled up through the late 2010s and early 2020s, and current filers are now working incrementally within it.
Measurement-specific IPC classes G01B and G01J each hold only 5 of the 119 tracked records, well below the 102 in H01L and 50 in C30B, even though in-situ monitoring is central to the search terms used to build this dataset. That gap suggests real-time optical growth-rate sensing, in-situ defect density metrology and specific-resistance feedback control are comparatively under-claimed relative to their technical role. Any first claim aimed at that space should tie a specific sensor modality or measurement technique to a defined process adjustment, since broad monitoring claims are more likely to run into existing device-level patents.
The United States dominates, with 78 of roughly 110 receiving-office filings in this dataset, more than ten times the next largest single office, China, at 12. The UK, the European Patent Office, WIPO/PCT and Japan each account for single-digit filings. Any clearance work should start with US prosecution history and file wrappers, since skipping that jurisdiction would miss the majority of the documented record, and then extend to China given its next-largest share.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.