SiC MOSFET Device Patents: Who Leads, Where the Gaps Are 2026
Silicon Carbide MOSFET Device Design Patents: Filing Trends and Leadership
42.7% of all filings sit with five companies. the top five assignees combine for 473 of the 1,107 records in scope, while a long tail of single- and few-filing entrants fills out the rest of the ranking. Annual filings rose from 58 in 2017 to a peak of 114 in 2021, then eased to 84 by 2024 — a -26% move over that three-year span. 2025 and 2026 figures are partial due to the normal publication lag and should not be read as a decline.
- 1WOLFSPEED INC25.6%
- 2GENESIC SEMICON5.2%
- 3GENERAL ELECTRIC CO4.5%
- 4FUJI ELECTRIC CO LTD3.7%
- 5HITACHI ENERGY LTD3.7%
See the full silicon carbide mosfet device design analysis in Eureka
- The complete ranking, not just the top five
- Every IPC branch with its share of the corpus
- The most-cited records, and where claim space is still thin
Frequently asked questions
Who holds the most patents in silicon carbide MOSFET device design?
One assignee leads this landscape clearly, with 283 of the 1,107 records in scope compared with 41 at fifth place and 23 at tenth place. The top five assignees combined account for 42.7% of all records, and the top ten reach 54.9%. That leaves a substantial share of the field, close to half, held by a long tail of smaller and single-filing entrants, so the market is concentrated at the top but not closed to new filers.
Is filing activity in SiC MOSFET device design increasing or decreasing?
Filings rose from 58 in 2017 to a peak of 114 in 2021, then eased to 84 by 2024, a -26% move over that span. 2024 is the most recent year that can be treated as complete because publication lags filing by roughly 18 months, so the lower counts shown for 2025 and 2026 reflect that lag rather than an actual drop in filing activity. Read the 2021 peak as the high point of a filing surge rather than the field’s steady-state level.
What technical areas are most and least claimed in this space?
General semiconductor device classes dominate: H01L appears on 82.7% of the 1,107 records, with H10D and H10P as the next-heaviest sub-buckets. Classes tied to power conversion circuitry (H02M, 2.8%) and motor control (H02P, 2.0%) are claimed far less often, which points to device-structure claims being far more contested than system-integration claims. Anyone filing a claim tied to gate-driver co-integration or motor-control-specific topologies is filing into comparatively open ground.
Disclaimer. This analysis is based on Patsnap Eureka data drawn from a limited snapshot of global patent records and is provided for general information and reference only. Patent data carries inherent limitations — recent filings are under-counted because of publication lag, counts may be on a record or family basis, classification and applicant-name data may contain errors or duplicates, and the underlying search query defines the scope shown — so the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing here is an exhaustive prior-art, novelty, freedom-to-operate or validity search, nor does it constitute legal, financial or professional advice, and it should not be relied upon as such. Verify independently and review with qualified patent and legal professionals before acting on it.
Method: Filing trend and technology composition. Derived from a Patsnap search on Silicon Carbide MOSFET Device Design covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish. Every share divides by all records in scope. Data: Patsnap Eureka. See the full landscape report.