Silicon Carbide MOSFET Reliability Patents: Who Leads, Trends 2026
- Filings peaked in 2017 at 11 and have since flattened to single digits, with zero filings in the latest year across every tracked assignee.
- Every one of the 20 documented families sits inside a single IPC subclass, H01L, leaving reliability test-methodology and process claims almost entirely unclaimed.
- China accounts for 10 of the 20 receiving-office filings, with Robert Bosch as the leading non-Chinese holder of a cited structural claim.
A structurally dense, single-subclass field with early peak filing
Silicon carbide MOSFET reliability filings in this dataset cluster tightly around vertical and trench-gate device structure, with gate-oxide reliability, short-circuit ruggedness, body-diode degradation and threshold-voltage stability named as the shared claim territory. Filing activity peaked in 2017 and has since declined toward single digits, and every one of the 20 documented families classifies under the same IPC subclass, H01L, rather than spreading into packaging, thermal-management or test-methodology claims.
China's patent office receives half of the tracked filings, with Japan, Taiwan, the United States, WIPO and Europe accounting for the remainder in smaller numbers. Robert Bosch's vertical SiC MOSFET filing is the clearest non-Chinese anchor in the most-cited set, while the highest-cited record overall is a Chinese split-gate design with an integrated freewheeling diode.
Filing trend and technology composition
Twenty published families span 2015 through the 2026 cut-off, concentrated entirely within the H01L semiconductor-device subclass and filed predominantly through China's patent office.
Filings peaked in 2017, then flattened
Annual filings ran from 11 in 2017 down to 3 at the 2022 midpoint and effectively zero by the most recent year. Because publication lags filing by roughly 18 months, the last one to two years understate true activity, but the multi-year decline from the 2017 peak predates that lag effect.
A single-subclass field
All 20 records classify under H01L (semiconductor devices), with no measurable spread into packaging, thermal-management or test-methodology IPC classes — the entire documented claim space sits inside device structure.
Shares are the percentage of the 20 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on Silicon Carbide MOSFET Reliability with Eureka
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Try EurekaThe filings shaping this claim space
Vertical SiC MOSFET — Robert Bosch GmbH
A vertical SiC MOSFET having a source terminal, a drain terminal, and a gate region, as well as an epitaxial layer disposed between the source terminal and the drain terminal and having a doping of a first type, is furnished, a horizontally extending intermediate layer, which has regions having a doping of a second type different from the doping of a first type, being embedded into the epitaxial layer. The vertical SiC MOSFET is notable for the fact that at least the regions having doping of a second type are electrically conductively connected to the source terminal. The gate region can be disposed in a gate trench.Published 2020-09-17, cited 10 times within this dataset.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | CN114122123A | 集成高速续流二极管的碳化硅分离栅MOSFET及制备方法 | 12 |
| 2 | US20200295186A1 | Vertical sic mosfet | 10 |
| 3 | CN118213275A | 一种沟槽型SiCMOSFET及其制备方法 | 9 |
| 4 | CN114744023A | 一种U型栅沟槽型SiC MOSFET的制造方法 | 7 |
| 5 | JP2019514206A | 縦型SiC‐MOSFET | 2 |
| 6 | CN118156310A | 集成PMOS的碳化硅MOSFET器件及制备方法 | 1 |
| 7 | WO2023142393A1 | 集成高速续流二极管的碳化硅分离栅MOSFET及制备方法 | 1 |
| 8 | WO2017167469A1 | Vertical sic mosfet | 1 |
Citation counts reflect influence within this searched corpus and favour older filings; they are not a measure of current commercial importance.
Patent titles are shown in the language they were filed in, not translated, so that each record stays verifiable against the original filing — a translated title will not match in Eureka or in any national register. Publication numbers are shown where the record carries one (8 of 8 rows); clicking a row searches Eureka by that number.
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Browse MCP servers →What the citation and filing pattern actually shows
Reading citation weight against filing recency separates the structural claims that shaped this field from activity that has since gone quiet.
Split-gate with integrated diode sets the reference point
The most-cited record in this set combines a split-gate cell with an integrated high-speed freewheeling diode, making it the structural claim other filings in this space most often reference.
A field that peaked early and has gone quiet
Annual filings fell from a 2017 peak of 11 to 3 by the 2022 midpoint, and no tracked assignee shows filings in the most recent year, though publication lag understates the very latest activity.
All claims sit inside device structure
Every record classifies under H01L with no measurable branching into packaging, thermal or test-methodology IPC classes, despite those areas appearing in the underlying search terms.
Filing here is almost entirely solo
Only one co-assignee pairing appears across the full set of 20 families, both affiliated entities under the same corporate group rather than an external partnership.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to silicon carbide mosfet reliability, with the prior art for and against each one.
Who holds the claims, and where activity has stalled
No tracked assignee shows filings in the latest year, and the co-assignee network is essentially non-existent — this reads as a field where structural claims were staked early rather than one under active competitive build-out.
Split-gate diode integration leads on influence
The highest-cited record in this set integrates a fast-recovery body diode into a split-gate cell, a structural approach that other filings in the corpus reference more than any other single design.
Robert Bosch holds the leading Western filing
Bosch's vertical SiC MOSFET, with a source-connected buried shielding layer under a gate trench, is the most-cited non-Chinese record and the one most likely to intersect Western product designs.
Activity has gone quiet across the board
Every assignee tracked for recent-year momentum, including Bosch, several Chinese semiconductor manufacturers and a university, shows zero filings in the most recent year of the dataset.
Filing is almost entirely independent
The only co-assignee pairing in the dataset links two affiliated entities within the same corporate group, not an external joint-development arrangement.
| Assignee | Recent year | YoY |
|---|---|---|
| Robert Bosch GmbH (Germany) | 0 | — |
| Yangzhou Yangjie Electronic Technology Co., Ltd. | 0 | — |
| Chengdu Rongsic Semiconductor Co., Ltd. | 0 | — |
| University of Electronic Science and Technology of China | 0 | — |
| TankeBlue Semiconductor Technology (Beijing) Co., Ltd. | 0 | — |
| Jiangsu Suolidepu Semiconductor Technology Co., Ltd. | 0 | — |
| China Zhenhua Group Yongguang Electronics Co., Ltd. (State-Owned Factory 873) | 0 | — |
| China Zhenhua Electronics Group Co., Ltd. | 0 | — |
Where to take this analysis next
The filing pattern here points to specific follow-up work rather than a single conclusion.
Run a claim chart against the top-cited structural filings
Compare any new SiC MOSFET design against the split-gate and source-connected shielding claims that carry the highest citation weight in this set before committing to a device structure.
Build a claim chart in EurekaTrack whether recent-year silence is real or a lag artefact
Zero latest-year filings across all tracked assignees could reflect genuine slowdown or the roughly 18-month publication lag; re-checking this dataset in six to twelve months will separate the two.
Set up a monitoring alert in EurekaScope a process-claim filing in the under-claimed branches
Test methodology and process-and-measurement claims around threshold-voltage stability and short-circuit ruggedness remain thin relative to structural claims, and may offer clearer freedom to file.
Explore white space in EurekaCommon questions on SiC MOSFET reliability patents
Citation counts in this dataset point to a small group of trench and split-gate structural filings as the most-referenced, led by a Chinese split-gate design with an integrated fast-recovery diode and a Robert Bosch vertical MOSFET filing. High citation count signals influence within the searched corpus rather than current commercial dominance, since older records accumulate citations simply by being available longer. Anyone doing freedom-to-operate work should treat these as the anchor filings to check first, then work outward to the less-cited but more recent records.
Filing activity peaked at 11 records in 2017 and had fallen to 3 by the 2022 midpoint, with no tracked assignee showing filings in the latest year. That pattern reads as flat-to-declining rather than growing, though publication lag of about 18 months means the most recent one or two years are understated in any raw count. The practical read is that core structural claims were staked out earlier in the period, and recent activity, if any, has not yet surfaced in published records.
Every record here classifies into the single H01L subclass, with no visible branching into short-circuit ruggedness test methodology, packaging-level thermal management, or process-and-measurement claims tying threshold-voltage stability to a specific manufacturing step. Those areas appear in the search criteria and abstracts but not among the structural claims that dominate the most-cited records. That gap is where a narrower, process-oriented claim is more likely to clear prior art than another trench-gate structure claim.
No. The claim in that filing is specific to a trench-gate vertical SiC MOSFET where a buried, second-doping-type intermediate layer is electrically connected to the source terminal — it is the source connection of that shielding layer that forms the limitation, not the trench gate by itself. A trench-gate design with a gate-tied or floating shield layer, or a different gate topology entirely, sits outside the literal claim scope. Any real clearance opinion still needs a full claim-chart comparison against the specific structure in question.
Ten of the twenty documented families were filed through China's patent office, against much smaller counts for Japan, Taiwan, the United States, WIPO and Europe. That split reflects where SiC power-device manufacturing capacity and R&D investment has concentrated in recent years, and it means China-first filers are setting much of the structural claim baseline that others must clear. It does not by itself indicate where the technology is used commercially, since manufacturing and end-use markets extend well beyond the filing jurisdiction.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
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Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.