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Run your analysis now →https://www.patsnap.com/resources/blog/rd-blog/silicon-carbide-single-crystal-substrates-patent-landscape/ · Patsnap · data cut-off 2026-07-31 · downloaded from the live page
Patent Landscape · Semiconductor EquipmentSilicon Carbide Single Crystal Substrate Patents: Concentration at the Top, a Cooling Trend
- 96.6% of all 29 records in scope sit with just five assignees — this field has almost no long tail left to map.
- Filing peaked in 2018 at 9 records and the 2022 midpoint shows zero, pointing to a flat-to-declining trend rather than steady growth.
- 89.7% of records carry a C30B crystal-growth class while device-integration classes like H01L appear in only 27.6%, showing where claim density thins out.
29
Published Records
97%
Top-5 Share of All Records
0%
3-Yr Growth (lag-adjusted)
US
Leading Jurisdiction
Published byPatsnap Research··7 min readSourced from Patsnap Eureka
Overview
What this landscape covers
This dataset tracks patent filings on silicon carbide (SiC) single crystal substrates — the boules and wafers used as the base material for power and RF semiconductor devices. The search string focuses on physical vapor transport growth, micropipe and basal plane dislocation control, the transition to larger wafer diameters, slicing and polishing yield, and resistivity control, filtered against crystal-growth and semiconductor-device IPC classes. Coverage runs from 2015 through the 2026 data cut-off, with 29 records in scope.
Publication typically lags filing by around 18 months, so the most recent year in any trend line understates real activity. Read the 2025 and 2026 figures as a floor, not a ceiling.
Filing activity and technology composition, 2017-2026
Source: Patsnap Eureka. Assignee ranking and totals. Derived from a Patsnap search on Silicon Carbide Single Crystal Substrates covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
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The Data
Filing trend and technology composition
Two views of the same 29 records: how filing activity has moved year over year, and which IPC subclasses carry the claim density.
A peak in 2018, then a decline
Filing rose to 6 records in 2017 and peaked at 9 in 2018. By the 2022 midpoint, annual filing had fallen to zero, and it has not recovered since — a pattern consistent with a technology that consolidated early rather than one still attracting new entrants.
Crystal growth dominates, device integration trails
C30B (crystal growth) appears in 89.7% of the 29 records in scope, confirming that most claims target the boule-growth and substrate-formation process itself. H01L (semiconductor devices) appears in only 27.6%, and B22F, B32B and C23C each appear in just one record (3.4%) — a sign that device-integration, packaging and coating claims are thin relative to core crystal growth.
Shares are the percentage of the 29 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Source: Patsnap Eureka. Filing trend and technology composition. Derived from a Patsnap search on Silicon Carbide Single Crystal Substrates covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.
Go deeper on Silicon Carbide Single Crystal Substrates with Eureka
This page is one run against one query. Ask Eureka your own question about silicon carbide single crystal substrates and every answer comes back with the patent numbers behind it.
Try EurekaKey Patents
Representative and most-cited filings
Representative Filing
Silicon carbide substrate and method of growing SiC single crystal boules
SICRYSTAL GMBH
Describes a SiC substrate with an inner region making up at least 30% of total surface area and a ring-shaped peripheral region surrounding it, where dopant concentration differs by at least 1×10^18 cm−3 between the two regions, produced via a physical vapor transport growth system.Filed by SICRYSTAL GMBH, published 2025-11-04 as US12460314B2.
Most-cited records in scope
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20160032486A1 | Method for manufacturing sic wafer fit for integration with power device manufacturing technology | 36 |
| 2 | EP3382067A1 | Silicon carbide substrate and method of growing sic single crystal boules | 13 |
| 3 | US20200071847A1 | SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES | 10 |
| 4 | US20160189956A1 | METHOD FOR MANUFACTURING SiC WAFER FIT FOR INTEGRATION WITH POWER DEVICE MANUFACTURING TECHNOLOGY | 10 |
| 5 | US10002760B2 | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology | 9 |
| 6 | US9279192B2 | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology | 9 |
| 7 | EP2851456A1 | Large Diameter, High Quality SiC Single Crystals, Method and Apparatus | 8 |
| 8 | WO2016018983A1 | Method of manufacturing large diameter silicon carbide crystal by sublimation and related semiconductor sic w… | 7 |
| 9 | US20210148006A1 | SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES | 6 |
| 10 | CN110382750A | 碳化硅衬底和用于生长SiC单晶锭的方法 | 6 |
Citation counts favour older records inside any searched corpus; treat them as a signal of influence on the field, not of current commercial importance.
Patent titles are shown in the language they were filed in, not translated, so that each record stays verifiable against the original filing — a translated title will not match in Eureka or in any national register. Each row carries its publication number; clicking a row searches Eureka by that number.
Source: Patsnap Eureka. Citation counts and representative records. Derived from a Patsnap search on Silicon Carbide Single Crystal Substrates covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
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What the numbers mean for a filing decision
Three findings drawn directly from the 29 records in scope, read for what they imply about where to file and where not to.
Concentration
96.6% of 29 records
held by top 5 assignees
The field is already claimed by a small group
Five assignees account for 28 of the 29 records in scope, with the leader alone holding 19. A new entrant is not filing into open ground here — it is filing directly against a concentrated set of holders whose claims likely cover the core growth process.
Top 5 combined, 28 of 29 records
Trend
9 records in 2018
peak year, then decline
Activity has cooled since 2018
Filing reached 6 records in 2017 and 9 in 2018, then fell away — the 2022 midpoint shows zero. That pattern reads as a technology where the dominant approaches were staked out early, rather than one in an active growth phase.
2017: 6 → 2018 peak: 9 → 2022: 0
Technology mix
89.7% vs 27.6%
C30B vs H01L coverage
Growth claims outweigh device-integration claims
Crystal growth (C30B) sits in 89.7% of the 29 records while semiconductor-device classes (H01L) sit in only 27.6%. Powder metallurgy, laminate and coating classes each register just one record apiece, suggesting these adjacent branches carry far less claim density.
C30B 26 records · H01L 8 records
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Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to silicon carbide single crystal substrates, with the prior art for and against each one.
Source: Patsnap Eureka. Co-assignee relationships and derived observations. Derived from a Patsnap search on Silicon Carbide Single Crystal Substrates covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
Players
Who holds the field, and where the gaps sit
The assignee ranking returns six companies covering all 29 records in scope — there is no long tail beyond them to chart.
Leader
19 records
of 29 in scope
One assignee holds the majority position
The leading assignee alone accounts for 19 of the 29 records in scope, well ahead of the rest of the ranked group. That scale suggests its portfolio likely anchors the core physical vapor transport growth claims that the rest of the field must design around.
19 of 29 records
Ranked field
6 companies
cover 100% of records
A closed, fully accounted ranking
The assignee ranking lists six companies and between them they cover all 29 records in scope — there are no unranked or unattributed filings left over. This is a mature, consolidated ownership picture rather than a fragmented one.
6 companies, 29 of 29 records
Momentum
0 in latest year
across ranked assignees
No ranked assignee is filing in the latest year
Every assignee in the ranking shows zero filings in the most recent year, including a -100% year-on-year change for the smallest-ranked filer. Given the 18-month publication lag, some of this is filing not yet visible, but the multi-year decline through the 2022 midpoint suggests genuine cooling rather than a reporting artefact alone.
Latest-year filings: 0 across ranked assignees
Recent-year filing momentum by assignee
| Assignee | Recent year | YoY |
|---|---|---|
| SK Siltron CSS LLC | 0 | — |
| Dow Silicones Corporation | 0 | — |
| STMicroelectronics International N.V. | 0 | — |
| II-VI Incorporated | 0 | — |
| Anhui Dongxun Sealing Technology Co., Ltd. | 0 | -100% |
Source: Patsnap Eureka. Assignee-level momentum. Derived from a Patsnap search on Silicon Carbide Single Crystal Substrates covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
What's Next
Where to take this next
The dataset points to a consolidated field with specific gaps rather than open ground. These are the natural next steps for a team assessing freedom to operate or a filing strategy.
Map the leader's claim boundaries
With one assignee holding 19 of 29 records in scope, the practical first step is understanding exactly what its core growth and doping claims cover before drafting anything adjacent.
Explore claim scope in EurekaCheck the under-claimed branches
Powder metallurgy, laminate stacks and coating classes each carry only one record in this dataset — worth a closer look before assuming they are unavailable.
Run a white space search in EurekaTrack whether filing has actually stopped
Zero recent-year filings across every ranked assignee could reflect the publication lag as much as a real slowdown; a fresher pull will clarify which it is.
Set up monitoring in EurekaSource: Patsnap Eureka. Forward-looking reading of the same dataset. Derived from a Patsnap search on Silicon Carbide Single Crystal Substrates covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
FAQ
Common questions about SiC substrate patents
In this dataset of 29 records, a single assignee holds 19 of them, making it the clear leader by a wide margin. The next four assignees combined bring the top-five total to 28 of 29 records, or 96.6% of everything in scope. This level of concentration means the field is effectively closed among a small group rather than fragmented across many small filers.
No, the evidence points the other way. Filing rose to 6 records in 2017 and peaked at 9 in 2018, but by the 2022 midpoint annual filing had dropped to zero and has not recovered. Because publication lags filing by roughly 18 months, the very latest years will always look thinner than they eventually turn out to be, but the multi-year decline through 2022 is a genuine signal, not just a lag artefact.
Crystal growth process claims, classified under IPC C30B, appear in 89.7% of the 29 records in scope, making it by far the dominant category. Semiconductor-device integration claims (H01L) appear in only 27.6% of records, and powder metallurgy, laminate structures and coating processes each appear in just one record apiece. This tells you claim density is heavily weighted toward the boule-growth and substrate-formation step itself, not downstream device integration or packaging.
Based on IPC composition, the branches furthest from saturation are powder-metallurgy source material preparation, laminate or composite substrate stacks, and coating/surface deposition processes — each represented by only one record out of 29 in this dataset. Post-growth wafer slicing and the transition to larger wafer diameters are named in the search scope but do not show up as a dominant IPC class, suggesting claims there are less consolidated than core crystal growth. Any of these is a more promising starting point for a first claim than the crowded C30B growth-process space.
US12460314B2, filed by SICRYSTAL GMBH and published 2025-11-04, claims a SiC substrate with an inner region covering at least 30% of the total surface area and a ring-shaped peripheral region where dopant concentration differs by at least 1×10^18 cm−3 between the two zones, made via physical vapor transport growth. That is a fairly specific structural and doping-profile claim, not a blanket claim over all SiC substrates or all PVT growth. Entrants working with different dopant-profile architectures, or outside this particular inner/peripheral region structure, are not automatically blocked by it, though anyone using a similar radial doping gradient should review it closely.
Answers are grounded in the same dataset. Derived from a Patsnap search on Silicon Carbide Single Crystal Substrates covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish.Run this in Eureka MCP
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company's registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.