Silicon Epitaxial Layer Deposition Patents: Top Companies & Trends 2026
Silicon Epitaxial Layer Deposition Patents: Who Leads and Where Filing Is Heading
Filings nearly quadrupled from 2021 to 2024, rising from 5 to 23 in the peak year so far, before the most recent two years understate activity due to publication lag. Annual filings rose from 13 in 2017 to a peak of 23 in 2024, including a +360% jump from 2021 (5) to 2024 (23). Treat 2025 and 2026 as still filling in rather than as a genuine slowdown.
- 1SHIN ETSU HANDOTAI CO LTD75
- 2GLOBALWAFERS CO LTD24
- 3SUMCO CORP22
- 4INTERNATIONAL BUSINESS MACHINE CORPORATION21
- 5SUNEDISON INC19
See the full silicon epitaxial layer deposition analysis in Eureka
- The complete ranking, not just the top five
- Every IPC branch with its share of the corpus
- The most-cited records, and where claim space is still thin
Common questions about this landscape
Who holds the most patents in silicon epitaxial layer deposition?
The ranking covers 100 companies across 574 records, with the leading assignee holding 75 records — well ahead of the fifth-place figure of 19. That gap indicates one incumbent has built substantially deeper coverage than the rest of the field, though the top 5 combined still account for only 28.0% of all records, leaving most filings spread across a long tail of smaller players. Anyone assessing competitive position should look at both the leader’s portfolio and the broader tail rather than assuming the field is a two-horse race.
Is filing activity in silicon epitaxial deposition increasing or slowing down?
Filings grew sharply from 5 in 2021 to 23 in 2024, a +360% increase over that span and the fastest growth window in the dataset’s coverage. The two most recent years appear lower in the raw trend, but that reflects the roughly 18-month lag between filing and publication rather than an actual drop in activity. Based on the 2021–2024 trajectory, the technology area was still accelerating as of the most recent complete filing year.
What does US6184154B1 actually cover, and does it block new designs?
US6184154B1 covers a method for processing the backside of a wafer — such as etching it or applying a back seal — inside the same epitaxial reactor chamber used to deposit the front-side layer, without removing the wafer between steps. It blocks designs that combine backside processing and front-side epitaxial deposition within a single chamber cycle using the described sealing or etching approaches. Designs that process the backside in a separate chamber, or use a materially different sealing mechanism, sit outside its core claim scope, but a detailed claim chart is needed to confirm design-around viability for any specific reactor configuration.
Disclaimer. This analysis is based on Patsnap Eureka data drawn from a limited snapshot of global patent records and is provided for general information and reference only. Patent data carries inherent limitations — recent filings are under-counted because of publication lag, counts may be on a record or family basis, classification and applicant-name data may contain errors or duplicates, and the underlying search query defines the scope shown — so the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing here is an exhaustive prior-art, novelty, freedom-to-operate or validity search, nor does it constitute legal, financial or professional advice, and it should not be relied upon as such. Verify independently and review with qualified patent and legal professionals before acting on it.
Method: Filing trend and technology composition. Derived from a Patsnap search on Silicon Epitaxial Layer Deposition covering 2015–2026, data cut-off 2026-07-31. Counts reflect published records only and shift as new filings publish. Every share divides by all records in scope. Data: Patsnap Eureka. See the full landscape report.