SOI Substrate Manufacturing Patents: Who Leads, Trends 2026
- Two assignees account for the entire ranked field. the top 2 combined hold 12 of 12 records in scope (100.0%), with no third filer appearing in the ranking at all.
- Filing activity peaked in 2019 and has not recovered. six records that year against a flat-to-declining midpoint of two in 2022, with zero recorded in the most recent full year.
- Claims cluster tightly around device and RF wafer platforms. H01L covers all 12 records and H10W appears on 10 of 12 (83.3%), leaving crystal-growth claims under C30B (41.7%) comparatively thin.
What the SOI substrate manufacturing patent record actually shows
The scope here is narrow by design: records must combine SOI substrate or layer-transfer wafer terminology in the title with process-level claim language — ion implantation and splitting, buried oxide thickness uniformity, bonding void control, top silicon thickness, or defectivity — under H01L21, H01L27 or C30B33. That combination returns only 12 published records, which is small enough that every figure below should be read as a description of a tight, specialist corpus rather than an industry-wide survey.
Within that scope, filing activity is concentrated in both time and ownership. Two assignees cover the full ranked set, and the trend line rose to a single peak in 2019 before flattening. Publication lags filing by roughly 18 months, so the most recent year understates true filing activity and should not be read as a stop in R&D.
Filing trend and technology composition
Two views of the same 12-record corpus: how filings moved year over year, and which IPC subclasses carry the claim volume.
A single 2019 peak, then a flat-to-declining line
Filings rose to six records in 2019, the peak so far, then eased back to two by the 2022 midpoint and show zero in the most recent full year. Given the typical 18-month lag between filing and publication, the last one to two years on the chart will fill in further as records publish; treat the apparent drop-off as incomplete rather than confirmed.
Claim density sits in H01L and H10W, not in crystal growth
Every one of the 12 records in scope carries an H01L semiconductor-device classification, and 10 of 12 (83.3%) also carry H10W. C30B crystal-growth claims appear on only 5 of 12 records (41.7%), which is the thinnest of the three subclasses tracked here and the one most likely to hold room for a differentiated claim.
Shares are the percentage of the 12 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on SOI Substrate Manufacturing with Eureka
This page is one run against one query. Ask Eureka your own question about soi substrate manufacturing and every answer comes back with the patent numbers behind it.
Try EurekaThe most-cited records in this corpus
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.Filed by GLOBALWAFERS CO., LTD.; published 2021-03-09 as US10943813B2.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20200020766A1 | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabili… | 15 |
| 2 | US10943813B2 | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabili… | 2 |
| 3 | US11532501B2 | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabili… | 1 |
Citation counts inside a searched corpus favour older records; read them as a signal of influence on later filings, not as a measure of current commercial importance.
Publication numbers are shown where the record carries one (3 of 3 rows); clicking a row searches Eureka by that number.
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With only 12 records and two ranked assignees, the practical questions are less about market share and more about which specific claim territory is already occupied.
No long tail in this corpus
The top 2 combined account for all 12 records in scope, and the top 5 figure is identical because no other assignee appears in the ranking. A new filer is not competing against a crowded field of small players here — it is negotiating around two established positions.
Peak passed, trend flat since
Filings peaked at six records in 2019 and had fallen to two by the 2022 midpoint, with the latest full year showing zero. That pattern reads as a technology that had its claim-filing push already, rather than one still accelerating — though the 18-month publication lag means the very last data points are the least reliable.
Influence concentrated in one earlier filing
The most-cited record in this corpus carries 15 citations, well ahead of the next records at 2 and 1. That gap suggests a foundational filing that later applicants had to cite or design around, making it the first document worth reading closely before drafting new claims in this space.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to soi substrate manufacturing, with the prior art for and against each one.
Who holds the claim positions
The ranked assignee list for this corpus contains exactly two companies; there is no third-place filer to compare them against.
One assignee holds most of the corpus
The leading assignee accounts for 10 of the 12 records in scope, placing the bulk of the documented claim territory with a single filer. Its recent-year momentum is recorded as zero, consistent with the corpus-wide flattening after the 2019 peak.
Second assignee, no recent activity recorded
The second ranked assignee, an individual inventor-assignee rather than a corporate entity, also shows zero filings in the latest year. Between the two, the ranked field accounts for 100.0% of all 12 records, so there is no unranked competitor visible in this dataset.
US-centred filing pattern
Eight of the 12 records were filed at the United States receiving office, with the remainder split across the EPO, Singapore and the WIPO PCT route. That skew suggests the documented activity is oriented toward US commercial deployment first.
| Assignee | Recent year | YoY |
|---|---|---|
| GlobalWafers Co., Ltd. | 0 | — |
| USENKO ALEXANDER YURI | 0 | — |
Where to take this analysis
The dataset points to a narrow, concentrated field with one dominant filer and a thin crystal-growth branch. The next steps depend on whether the goal is freedom-to-operate or new filing strategy.
Map the leader's full claim scope
With one assignee holding 10 of 12 records, a claim-by-claim read of its family is the fastest way to see exactly what is blocked before drafting anything adjacent.
Explore assignee claim scope in EurekaTest the C30B white space
Crystal-growth claims sit under the other two subclasses at 41.7% of records; running a freedom-to-operate check specifically against that branch can confirm whether it is genuinely open.
Run a white-space check in EurekaTrack the next publication wave
Given the 18-month lag between filing and publication, records filed in the last two years have not fully surfaced yet; revisiting the trend line in a future quarter will sharpen the recent-year picture.
Set a monitoring alert in EurekaCommon questions about SOI substrate manufacturing patents
The assignee ranking for this specific claim scope returns exactly two entities, together covering all 12 records in scope. This is a narrow, process-specific search — combining SOI or layer-transfer wafer terminology with claims on ion implantation, buried oxide uniformity, bonding voids, top silicon thickness or defectivity — so it does not represent every company active in SOI wafer production broadly, only those with claims matching this precise combination. A wider search on general SOI wafer terms would likely surface more filers.
Based on this corpus, filings peaked at six records in 2019 and had declined to two by the 2022 midpoint, with the most recent full year showing zero. That pattern points to a flat-to-declining trend rather than growth, though publication typically lags actual filing by around 18 months, so the last one to two years understate true activity. A more accurate read on the very latest period will only be possible once those pending applications publish.
US10943813B2, assigned to GLOBALWAFERS CO., LTD. and published 2021-03-09, claims a semiconductor-on-insulator structure built with a single-crystal silicon handle wafer sliced from a float-zone grown ingot, aimed at improved radio-frequency device performance. It is the most-cited record in this corpus, with 15 citations against 2 and 1 for the next most-cited records, suggesting it functions as a reference point that later filers had to work around. Anyone drafting claims on RF-oriented SOI handle-wafer sourcing should read its full claim set before proceeding.
The clearest signal in this dataset is the gap between IPC subclasses: H01L covers all 12 records and H10W covers 10 of 12, but C30B crystal-growth claims appear on only 5 of 12 records (41.7%). That gap suggests process-level crystal-growth claims tied to SOI substrate formation are comparatively under-claimed relative to device-level H01L and H10W claims. Specific candidate areas include buried oxide thickness uniformity control and bonding void mitigation, both named in the search scope but not yet densely claimed in this corpus.
Of the 12 records in scope, 8 were filed at the United States receiving office, with the remainder split between the EPO, Singapore and the WIPO PCT route. That distribution indicates the documented patent activity in this niche has so far been oriented primarily toward US filing and, by extension, US commercial deployment. A filer targeting a different primary market should still weigh a PCT filing given the international spread already present, even though it is a smaller share.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.