Superjunction MOSFET Patent Landscape 2026
Superjunction MOSFET Patent Landscape in 2026
The superjunction MOSFET patent space is heavily concentrated, with the Infineon Technology group collectively accounting for the largest share of filings and the United States serving as the dominant filing jurisdiction. Annual volume peaked in 2017 and has eased significantly since, placing the field in a late-stage, post-peak phase where incremental structural and process innovations remain the primary activity.
Infineon leads a highly consolidated field
Infineon Technologies Austria AG sits at the top of the applicant ranking, followed by Semiconductor Components Industries (ON Semiconductor), ICEMOS Technology, Third Dimension 3D Semiconductor, and Infineon Technologies AG. The top five filers’ combined share represents 41% of the hundred largest filers’ total patent records, signalling a notably concentrated competitive structure.
A pronounced tier gap separates Infineon Technologies Austria AG from the rest of the field. The next-ranked applicants hold substantially fewer patent records, and the Infineon group’s multiple affiliated entities — Austria, AG, Dresden, and Americas — together reinforce its structural dominance across the ranking.
| # | Applicant | Patent records | Share |
|---|---|---|---|
| 1 | Infineon Technologies Austria AG | 163 | |
| 2 | Semiconductor Components Industries LLC | 78 | |
| 3 | ICEMOS Technology | 67 | |
| 4 | Third Dimension 3D Semiconductor Inc | 66 | |
| 5 | Infineon Technologies AG | 60 | |
| 6 | Fuji Electric Co., Ltd. | 50 | |
| 7 | INFINEON TECH DRESDEN GMBH & CO KG | 46 | |
| 8 | ALPHA & OMEGA SEMICONDUCTOR INC | 38 | |
| 9 | Shanghai HuaHong Grace Semiconductor Manufacturing Corp | 36 | |
| 10 | Infineon Technologies Americas Corp | 33 |
| # | Applicant | Patent records | Share |
|---|---|---|---|
| 11 | D3 Semiconductor LLC | 30 | |
| 12 | Siliconix Inc | 22 | |
| 13 | MaxPower Semiconductor Inc | 22 | |
| 14 | International Rectifier Corporation | 17 | |
| 15 | Siliconix Technology C.V. | 16 | |
| 16 | Wolfspeed Inc | 16 | |
| 17 | Fairchild Semiconductor Corporation | 15 | |
| 18 | Taiwan Semiconductor Manufacturing Co., Ltd. | 15 | |
| 19 | Renesas Electronics Corporation | 14 | |
| 20 | ALPHA & OMEGA SEMICONDUCTOR (CAYMAN) LTD | 14 |
Infineon’s breadth across device architecture, process integration, and packaging subclasses suggests a defensive portfolio strategy designed to cover the full superjunction value chain. Challengers such as ICEMOS Technology and Third Dimension 3D Semiconductor have carved out more focused positions, primarily in deep-trench fabrication processes.
Filings from approximately 2023 onward are subject to publication lag and are likely under-counted; apparent low activity in the most recent periods should not be interpreted as a sudden exit by participants. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.
How filing activity and technology mix are shifting
The annual trend chart and IPC composition chart together reveal a field that peaked in 2017 and has since contracted, while remaining almost entirely anchored in core semiconductor device classifications.
Annual filing trend
Annual filings peaked at 72 records in 2017 and declined to 40 by 2022 and 33 in 2023. Figures for 2024 and 2025 are substantially under-counted due to publication lag and should not be read as a true measure of current activity. The overall window reflects a post-peak field with easing annual volume.
↗ Hover for values · click a bar to ask EurekaTechnology composition
H01L (Semiconductor devices) dominates the IPC composition by a wide margin, confirming that innovation is concentrated in core device architecture and fabrication. Adjacent classes — H10D, H03K, H10N, and H02M — account for modest shares, indicating limited cross-domain diversification to date.
↗ Hover for values · click a bar to ask EurekaHighly cited patent families surfaced by the query
Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.
Radiation hardened high voltage superjunction MOSFET
A high voltage superjunction MOSFET includes a semiconductor substrate and a semiconductor layer having columns of first and second conductivity. A buffer layer of the first conductivity is between the semiconductor substrate and semiconductor layer. A plug region of the second conductivity is formed at a semiconductor layer surface and extends to the… (excerpt from the patent abstract)
| # | Patent | Citations |
|---|---|---|
| 1 | Trench depth monitor for semiconductor manufacturing | 415 |
| 2 | Semiconductor structure with improved smaller forw… | 252 |
| 3 | [superjunction schottky device and fabrication the… | 153 |
| 4 | Super trench MOSFET including buried source electr… | 122 |
| 5 | Semiconductor device edge termination structure | 121 |
| 6 | Angle implant process for cellular deep trench sid… | 111 |
| 7 | Angle implant process for cellular deep trench sid… | 102 |
| 8 | Super-junction semiconductor device | 97 |
Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.
What the patent structure means for R&D investment decisions
Four structural dimensions — maturity, concentration, collaboration, and geography — shape the risk and opportunity profile for any team considering entry or expansion in superjunction MOSFETs.
Post-peak field with selective residual innovation
The lifecycle stage is classified as Decline, with annual filings easing back from their 2017 peak and a recent-window growth rate of –45%. Core silicon superjunction architectures are mature; residual filings cluster around process refinements, edge termination, and integration with power modules. New entrants should focus on differentiated process nodes or wide-bandgap adjacencies rather than core silicon device structures.
Lifecycle: DeclineInfineon group controls the dominant share; second tier is fragmented
The top five filers hold 41% of the hundred largest filers’ combined patent records, and Infineon’s affiliated entities span the first, fifth, seventh, and tenth ranked positions. This level of concentration creates a dense prior-art landscape in mainstream silicon superjunction structures. Challengers occupy narrower technical niches — deep-trench formation, Schottky integration, or specific device geometries — where the blocking risk is lower.
High concentrationFuji Electric leads the only notable co-filing activity
The most active co-filing pair is Fuji Electric and the National Institute of Advanced Industrial Science and Technology (AIST), with five joint filings. Fuji Electric and Mitsubishi Electric have co-filed twice. Beyond these two pairings, the evidence shows no further significant collaboration networks, suggesting most participants pursue independent filing strategies. Teams seeking partnership signals for wide-bandgap or SiC superjunction adjacencies should note that the Fuji–AIST link is the clearest precedent.
Limited co-filingUS-centric filing; Europe and China are secondary but meaningful
The United States is the leading jurisdiction by a substantial margin, followed by Europe (EPO) and China. Germany, Japan, and Taiwan represent smaller but meaningful secondary markets. The relative under-representation of China compared to the size of its domestic power semiconductor industry suggests either deliberate filing restraint by incumbents or an emerging gap that Chinese foundries such as Shanghai HuaHong Grace are beginning to address.
US-led, multi-jurisdictionalGo beyond the landscape: Eureka’s TRIZ Solution agent breaks down an R&D problem and returns patented concept solutions, each with a technical approach and cited patent & literature evidence.
| Applicant | Collaborator | Co-filings |
|---|---|---|
| Fuji Electric Co., Ltd. | National Institute of Advanced Industrial Science and Technology (AIST) | 5 |
| Fuji Electric Co., Ltd. | Mitsubishi Electric Corporation | 2 |
Co-filing pairs, ranked by the number of jointly-filed patent families.
Infineon Austria leads; ICEMOS and Third Dimension hold focused challenger positions
The applicant landscape is shaped by one dominant group and a set of specialist challengers, with momentum data revealing that even the leader is seeing reduced recent filing rates.
Infineon Technologies Austria AG
Ranking first with 163 patent records, Infineon Technologies Austria AG concentrates its filings across H01L 29 (semiconductor device structures) and H01L 21 (semiconductor device manufacturing processes). Recent momentum shows a –29% decline versus its prior period, consistent with a maturing portfolio rather than active scale-up. The broader Infineon group — including Infineon Technologies AG (60 records), Infineon Tech Dresden GmbH & Co KG (46 records), and Infineon Technologies Americas Corp (33 records) — reinforces its comprehensive coverage of the superjunction design-to-fab pipeline.
163 patent recordsICEMOS Technology
Ranked third with 67 patent records, ICEMOS Technology focuses on H01L 21 and H01L 29, reflecting a process-centric approach to deep-trench superjunction fabrication. Its momentum trend shows it as a new entrant in the recent filing window, with 4 recent records — a small absolute number that may reflect a narrow but targeted re-entry rather than broad expansion. Its positioning complements, rather than directly replicates, Infineon’s device-architecture emphasis.
67 patent records| Applicant | Recent (3 yrs) | Trend |
|---|---|---|
| Infineon Technologies Austria AG | 34 | ▼ -29% |
| ICEMOS Technology | 4 | ▲ new entrant |
| Infineon Technologies AG | 8 | ▲ new entrant |
| Semiconductor Components Industries LLC | 2 | ▲ new entrant |
| Fuji Electric Co., Ltd. | 1 | ▲ new entrant |
| Infineon Technologies Dresden GmbH & Co KG | 2 | ▼ -93% |
Under-served IPC branches adjacent to the core superjunction domain
Beyond the dominant H01L class, several adjacent IPC branches show relatively sparse superjunction-specific filing activity, representing areas where the prior-art density is lower and cross-disciplinary innovation could find room.
H03K · Pulse technique & logic circuits
With only 19 patent records and a 2% share among the adjacent branches, H03K covers gate-drive and switching-pulse techniques directly relevant to superjunction MOSFET performance in high-frequency converters. The sparse filing density suggests that the integration of superjunction device characteristics with optimised gate-drive circuit topologies is under-explored in the patent record. Teams working on high-frequency power conversion — where superjunction switching losses are a key design constraint — may find this a viable entry path with lower blocking risk than core H01L subclasses.
Search this in Eureka →H02M · Power conversion (AC/DC etc.)
H02M, covering AC/DC and DC/DC power conversion circuits, accounts for only 10 patent records in the corpus — a 1% share. Given that superjunction MOSFETs are a preferred switching device in power factor correction and resonant converter topologies, the low filing density in H02M suggests that applicants have historically claimed at the device level rather than the system/circuit level. Co-claiming at the converter-topology level could differentiate a portfolio and is a realistic entry path for power electronics integrators or fabless design houses.
Search this in Eureka →How leading applicants differ by IPC technology route
Strength of each leader across the main technology routes.
| Player | H01L 29 · Semiconductor devices | H01L 21 · Semiconductor devices | H01L 27 · Semiconductor devices | H01L 23 · Semiconductor devices | H10D 62 · Semiconductor devices (general) |
|---|---|---|---|---|---|
| Infineon Technologies Austria AG | Strong · 119 | Strong · 86 | Emerging · 12 | Moderate · 25 | Emerging · 3 |
| Third Dimension 3D Semiconductor Inc | Strong · 62 | Strong · 68 | Emerging · 3 | Emerging · 6 | Absent |
| Infineon Technologies AG | Strong · 41 | Strong · 31 | Moderate · 16 | Moderate · 13 | Emerging · 4 |
| International Rectifier Corporation | Strong · 59 | Strong · 39 | Absent | Emerging · 3 | Absent |
| ICEMOS Technology | Strong · 42 | Strong · 50 | Emerging · 5 | Emerging · 4 | Absent |
| Semiconductor Components Industries LLC | Strong · 43 | Strong · 24 | Moderate · 11 | Absent | Absent |
| D3 Semiconductor LLC | Strong · 27 | Strong · 16 | Emerging · 4 | Emerging · 3 | Strong · 16 |
Frequently asked questions
The corpus covers 401 patent families in scope. This is the foundation for the landscape analysis, separate from the patent-record counts used in applicant and jurisdiction rankings.
Infineon Technologies Austria AG leads with 163 patent records. When combined with affiliated entities — Infineon Technologies AG (60), Infineon Tech Dresden GmbH & Co KG (46), and Infineon Technologies Americas Corp (33) — the Infineon group’s collective presence is substantially larger than any single competitor.
No. The lifecycle stage is classified as Decline. Annual filings peaked in 2017 at 72 records and have eased since. The recent-window growth rate is -45%. Figures for 2024 and 2025 are under-counted due to publication lag, but the overall trajectory is post-peak.
The United States is the leading jurisdiction, followed by Europe (EPO) and China. Germany, Japan, and Taiwan represent smaller secondary markets. Austria is also represented, consistent with Infineon’s home jurisdiction.
The most-cited work covers trench depth monitoring for semiconductor manufacturing (415 citations), semiconductor structures with improved forward characteristics (252 citations), superjunction Schottky device fabrication (153 citations), super trench MOSFETs with buried source electrodes (122 citations), and semiconductor device edge termination structures (121 citations).
Collaboration is limited. The most active co-filing pair is Fuji Electric and Japan’s National Institute of Advanced Industrial Science and Technology (AIST), with five joint filings. Fuji Electric and Mitsubishi Electric have co-filed twice. No other significant collaboration networks are evident in the data.
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Disclaimer. This page is generated from PatSnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
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