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TOPCon Absorber (n-Si) Patent Landscape 2026

TOPCon Absorber (n-Si) Patent Landscape 2026
Competitive Landscape
TOPCon Absorber (n-Si) Patent Landscape in 2026

The TOPCon n-type silicon absorber field is still expanding on a multi-year basis, with the field still in a Growth lifecycle stage, though annual volume has eased from its 2023 peak. Chinese manufacturers dominate filings, with Chuzhou Jietai New Energy Tech leading, and H01L semiconductor device patents accounting for the overwhelming share of technical activity.

376
Patent families in scope
25%
Top-5 share of top-100 filers
+193%
3-yr filing growth (lag-adj.)
China
Leading jurisdiction
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Published byPatSnap Insights Team··7 min readVerified by PatSnap Eureka data
Overview

Chinese manufacturers lead a moderately concentrated but rapidly growing field

Chuzhou Jietai New Energy Tech Co Ltd holds the top position with 29 patent families, followed closely by Chint New Energy Tech Co Ltd with 25 and Yingli Energy Development and Changzhou Shichuang Energy each with 20, establishing a tight leading tier.

The top five filers account for 25% of the combined output of the hundred largest filers, indicating moderate concentration rather than monopoly control — a competitive structure where multiple challengers can realistically gain ground.

Leading applicants
#ApplicantPatent familiesShare
1Chuzhou Jietai New Energy Tech Co Ltd29
2Chint New Energy Tech Co Ltd25
3Yingli Energy Development Co Ltd20
4Changzhou Shichuang Energy Co Ltd20
5Hanwha SolarOne Qidong14
6Qinghai Huanghe Hydropower Development Co Ltd13
7Huaian Jietai New Energy Technology Co Ltd12
8Yingli Energy Development (Baoding) Co Ltd11
9National Electric Power Investment Group Yellow River Upstream Hydropower Development Co Ltd11
10Wuhu GCL System Integration New Energy Technology Co Ltd10
#ApplicantPatent familiesShare
11French Alternative Energies and Atomic Energy Commission (CEA)10
123Sun Srl9
13NINGBO INST OF MATERIALS TECH & ENG CHINESE ACAD O…9
14Jolywood (Taizhou) Solar Technology Co Ltd9
15Qinghai Huanghe Hydropower Development Co Ltd Xi’an Solar Power Branch9
16Qinghai Huanghe Hydropower Development Co Ltd Xining Solar Power Branch9
17Trina Solar Co Ltd8
18Wuxi Songyu Technology Co Ltd8
19Jiangsu Microvia Nano Equipment Technology Co Ltd7
20Dongfang Huansheng Photovoltaic (Jiangsu) Co Ltd6
↗ Hover a row · click a company to ask Eureka

The leaders’ positions reflect vertically integrated Chinese solar manufacturers and state-linked energy groups, suggesting that process optimization and cell structure patents are being filed closest to manufacturing scale-up, not just early-stage research.

Filing counts for 20242026 are understated due to standard patent publication lag; apparent softness in those years should not be read as a real slowdown. Longer-window growth, applicant concentration, and technology-route coverage are therefore more reliable signals than the latest-year bar alone.

Source: PatSnap Eureka. Chart shows the top applicants ranked by patent families. Applicant counts can overlap where a patent family lists several applicants, so they need not sum to the total in scope.Explore deeper in Eureka →
Trends & Structure

Filings surged through 2023 and technology remains anchored in semiconductor device classes

The annual filing trend reveals a field that accelerated sharply from 2021 onward, while the technology composition chart shows that semiconductor device patents dominate, with coating, crystal growth, and cleaning processes forming a secondary layer.

Annual filing trend

Annual filings grew from near zero in 2017 to a recorded peak in 2023, representing a 193% increase in the recent three-year window versus the prior three-year window. The apparent drop in 2024–2026 reflects publication lag and should not be interpreted as a real decline.

Annual filing trendAnnual values from 2017 to 2026, peaking at 123 in 2023.020175201822201919202053202160202212320239220241202512026↗ Hover for values · click a bar to ask Eureka

Technology composition

H01L (Semiconductor devices) accounts for the dominant share of IPC-classified records, with H10P, C23C (Coating and surface deposition), and C30B (Crystal growth) forming a secondary cluster. Branches such as B08B (Cleaning), B23K (Welding and soldering), and B82Y (Nanotechnology) are present but sparse, pointing to under-developed process ancillaries.

Technology compositionH01L · Semiconductor devices leads with 378; H10P 40.H01L · Semiconductor dev…378H10P40C23C · Coating & surface…32C30B · Crystal growth19B08B · Cleaning (general)7B23K · Welding, solderin…6B82Y · Nanotechnology ap…5H10F · Photovoltaic & li…5↗ Hover for values · click a bar to ask Eureka
Source: PatSnap Eureka. Technology-branch counts are measured in patent records; a single patent family can carry several IPC classes, so class totals can exceed the family total in scope.Explore deeper in Eureka →
Key Patents

Highly cited patent families surfaced by the query

Citation-heavy patent families returned by the query. Use this section as citation context, not as a curated list of the most topic-specific patents.

Featured patent
US20250048772A1Published 2025-02-06

Preparation method for N-type TOPCon Cell

Jiangsu Runergy Century Photovoltaic Technology CO., LTD.

A preparation method for an N-type TOPCon cell comprising <b>1</b>) texturing an N-type silicon wafer with an alkaline solution; <b>2</b>) performing boron diffusion and laser lightly-doping on a front face of the wafer to form a lightly-doped region, and performing re-diffusion to form a front mask; <b>3</b>) polishing a back face of the wafer; <b>4</b>)… (excerpt from the patent abstract)

Preparation method for N-type TOPCon Cell — patent drawingPreparation method for N-type TOPCon Cell — patent drawing
Representative drawings from the patent document.
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Highly cited patent families surfaced by this query
#PatentCitations
1一种隧穿氧化层钝化接触太阳能电池及其制备方法61
2一种激光硼掺杂选择性发射极TOPCon结构电池及其制备方法57
3TOPCon电池及其制备方法和电器设备55
4一种TOPCon结构电池的制备方法42
5一种基于PECVD技术的高效低成本N型TOPCon电池的制备方法36
6用于Topcon电池制作的poly-Si绕镀的去除方法34
7管式PECVD制备多晶硅钝化接触结构的方法33
8一种隧穿氧钝化接触晶体硅太阳电池的制备方法31

Ranked by total forward citations. Citation counts favour older and broadly cited patent families, and broad or adjacent patents may appear when they match the search scope. Treat this section as citation context, not as a curated list of the most topic-specific patents. Some patent titles may be shown in their original, non-English language where an accurate translation could not be guaranteed.

Source: PatSnap Eureka. Citation-ranked patent families surfaced by this query.Open in Eureka →
Insights

What the competitive structure means for R&D investment decisions

The combination of Growth-stage dynamics, moderate concentration, and. China-centric filing geography creates specific implications for how entrants and incumbents should allocate R&D resources.

Growth

Growth stage with peak-year volume easing

The field is classified in a Growth lifecycle stage: the recent three-year filing window is 193% above the prior three-year window, confirming multi-year expansion. However, annual volume has eased from its 2023 peak, suggesting the initial scaling rush is maturing into more selective, differentiated filings. New entrants still have a window before the field consolidates.

Growth · post-2023 peak
Concentration

Moderate concentration leaves room for challengers

With the top five filers holding 25% of the hundred largest filers’ combined output, no single entity has locked up the space. The top-ranked applicant, Chuzhou Jietai, holds 29 patent families — a meaningful lead but not an insurmountable one. Firms ranked six through twenty each hold between 6 and 13 patent families, indicating an active secondary tier that could shift rankings quickly.

Moderate concentration
Collaboration

State-affiliated group filing is the dominant collaboration pattern

The most active co-filing cluster involves Qinghai Huanghe Hydropower Development Co Ltd, its Xi’an and Xining solar subsidiaries, and the National Electric Power Investment Group Yellow River entity, with up to 13 jointly filed patent families. Yingli Energy Development and its Baoding subsidiary form a second cluster with 9 co-filed families. Ningbo Institute of Materials Technology and Engineering (Chinese Academy of Sciences) co-files with Boweiruite Solar Technology, linking academic and commercial interests.

State-group clusters
Geography

China-dominant with thin international protection

China accounts for 323 of the jurisdictional patent records, while WIPO PCT filings number 13 and European EPO filings 12. United States records stand at 9 and India at 7. This sharp home-market bias means that non-Chinese entities face relatively sparse prior art barriers if seeking protection in Western markets, but also that Chinese applicants have limited international enforcement reach today.

China-centric · thin ROW
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Top collaboration links
ApplicantCollaboratorCo-filings
Qinghai Huanghe Hydropower Development Co LtdNational Electric Power Investment Group Yellow River Upstream Hydropower Development Co Ltd13
Qinghai Huanghe Hydropower Development Co LtdQinghai Huanghe Hydropower Development Co Ltd Xi’an Solar Power Branch11
Qinghai Huanghe Hydropower Development Co LtdQinghai Huanghe Hydropower Development Co Ltd Xining Solar Power Branch11
National Electric Power Investment Group Yellow River Upstream Hydropower Development Co LtdQinghai Huanghe Hydropower Development Co Ltd Xi’an Solar Power Branch11
National Electric Power Investment Group Yellow River Upstream Hydropower Development Co LtdQinghai Huanghe Hydropower Development Co Ltd Xining Solar Power Branch11
Qinghai Huanghe Hydropower Development Co Ltd Xi’an Solar Power BranchQinghai Huanghe Hydropower Development Co Ltd Xining Solar Power Branch11
Yingli Energy Development Co LtdYingli Energy Development (Baoding) Co Ltd9
Chint New Energy Technology Co LtdZhejiang Chint Solar Technology Co Ltd2
Yingli Energy Development Co LtdYingli Energy Development (Tianjin) Co Ltd2
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of SciencesBoweiruite Solar Technology Co Ltd2

Co-filing pairs, ranked by the number of jointly-filed patent families.

Source: PatSnap Eureka. Insights are derived from applicant ranking, lifecycle, collaboration, and jurisdiction data in the TOPCon n-Si patent corpus.Explore insights →
Leaders

Top players defined by semiconductor device focus and new-entrant momentum

The leading applicants share a near-exclusive focus on H01L 31 semiconductor device patents — cell structure and process integration — while their filing momentum diverges sharply, with most top players characterized as new entrants in the recent period.

Leader · Chuzhou Jietai New Energy Tech

Chuzhou Jietai New Energy Tech

Holds 29 patent families, the highest in the corpus, concentrated in H01L 31 (semiconductor devices) with secondary activity in H01L 21 and B08B 3 (cleaning). Momentum is flagged as a new entrant, indicating the bulk of these filings arrived in the recent period — consistent with rapid capacity-scale-up filing behavior rather than long-term incremental R&D.

families: 29
Challenger · Chint New Energy Tech

Chint New Energy Tech

Holds 25 patent families, ranking second, with a primary focus on H01L 31 and a notable secondary presence in H10F (Photovoltaic and light-sensitive devices), suggesting broader cell architecture coverage beyond pure absorber processing. The trajectory shows a –50% trend in the most recent period, indicating a possible shift in filing strategy or portfolio consolidation rather than exit from the space.

families: 25
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Access ranked profiles, technology emphasis, and filing momentum for all top filers in the TOPCon n-Si absorber landscape.
Yingli Energy DevelopmentChangzhou Shichuang Energy+ more
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Leading-applicant momentum (recent 3 yrs, lag-adjusted)
ApplicantRecent (3 yrs)Trend
Chuzhou Jietai New Energy Tech Co Ltd28▲ new entrant
Chint New Energy Technology Co Ltd8▼ -50%
Changzhou Shichuang Energy Co Ltd12▲ new entrant
Yingli Energy Development Co Ltd19▲ new entrant
Hanwha New Energy (Qidong) Co Ltd14▲ new entrant
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences3▲ new entrant
Qinghai Huanghe Hydropower Development Co Ltd9▲ new entrant
National Electric Power Investment Group Yellow River Upstream Hydropower Development Co Ltd9▲ new entrant
Source: PatSnap Eureka. Patent family counts are from the applicant ranking; technology emphasis is from IPC focus data; momentum is from recent-vs-prior filing comparison.Explore players →
Adjacent Branches

Under-served process branches adjacent to the dominant semiconductor device core

While H01L semiconductor device patents dominate, several process-engineering branches are present at low volume, pointing to areas where technical differentiation may be achievable with fewer competing filings.

C30B · Crystal growth processes

With only 19 patent records classified under C30B, crystal growth methods for n-type silicon substrate preparation remain an under-served branch relative to the cell-level H01L core. High-quality n-Si wafer crystallinity directly affects TOPCon carrier lifetime and passivation quality, giving crystal growth process IP plausible technical leverage. Entrants with existing crystal growth expertise — particularly in Czochralski or float-zone processes — have a realistic path given the sparse prior art in this branch.

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B08B · Cleaning processes for TOPCon fabrication

Only 7 patent records appear under B08B (Cleaning, general), despite surface cleaning being a critical pre-deposition step that directly affects tunnel oxide and poly-Si layer quality in TOPCon cells. The sparsity of cleaning-specific IP is an observation, not a validated gap — it may partly reflect that cleaning steps are claimed within broader H01L process patents. For equipment makers or chemical suppliers focused on contamination control, this branch warrants a targeted prior-art search before investment.

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See branch-level filing density, applicant overlap, and entry-path analysis across all IPC classes in the TOPCon n-Si landscape.
B23K · Welding and soldering for cell interconnectionB82Y · Nanotechnology applications in TOPCon+ more
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Source: PatSnap Eureka. Branch counts reflect IPC-classified patent records; sparsity is relative to the dominant H01L class and does not alone confirm a commercial opportunity.Explore emerging →
Route Matrix

How leading applicants differ by technology route

Route coverage across the main technology branches in the current evidence set.

PlayerH01L 31 · Semiconductor devicesH01L 21 · Semiconductor devicesC23C 16 · Coating & surface depositionH10P 72C30B 33 · Crystal growth
Yingli Energy Development Co LtdStrong · 19Strong · 14Emerging · 2Moderate · 5Absent
Chuzhou Jietai New Energy Tech Co LtdStrong · 28AbsentAbsentAbsentEmerging · 1
Yingli Energy Development (Baoding) Co LtdStrong · 11Strong · 9AbsentModerate · 5Absent
Chint New Energy Technology Co LtdStrong · 24AbsentAbsentAbsentAbsent
Changzhou Shichuang Energy Co LtdStrong · 20Emerging · 3AbsentEmerging · 1Absent
National Electric Power Investment Group Yellow River Upstream Hydropower Development Co LtdStrong · 13Moderate · 3Emerging · 1AbsentAbsent
Qinghai Huanghe Hydropower Development Co LtdStrong · 13Moderate · 3AbsentAbsentAbsent
Source: PatSnap Eureka. Matrix values are measured in patent records and should not be compared directly with family-level applicant totals.Compare in Eureka →
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Disclaimer. This page is generated from PatSnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.

Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.

Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. PatSnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.

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