2D Material Transistor Patents: Top Companies & Trends 2026
- Concentrated at the top. the leading assignee holds 207 records and the top 5 combined account for 37.9% of all 1,118 records in scope.
- Filing has pulled back from its peak. after peaking at 142 records in 2020, filings fell from 112 in 2021 to 75 in 2024, a 33% decline over that span.
- Core semiconductor classes dominate the claim map. H01L and H10D together cover the bulk of records, while crystal growth (C30B) and materials testing (G01N) sit further down the filing count.
Filing growth compares 2021 (112 records) with 2024 (75) — a three-year span. 2024 is the most recent year we treat as complete: publication lags filing by roughly 18 months, so 2025 onwards are still filling in and any growth rate that ends there would understate the field. Top-5 share is the combined record count of the five largest assignees divided by all 1,118 records in scope (CR5), not by the ranked leaders only.
What this landscape covers
This landscape tracks patent filings addressing two-dimensional materials in transistor structures — transition metal dichalcogenides, monolayer channels and related device architectures — where the filing also engages a specific integration problem: metal contact resistance, wafer-scale growth, defect density, gate dielectric integration, mobility degradation, or transfer process. That pairing narrows the corpus to records where the material claim and the manufacturing or performance problem appear together, rather than every mention of a 2D material in a semiconductor filing.
The dataset spans 1,118 published records filed or published between 2015 and mid-2026, drawn from a data cut-off of 31 July 2026. Because publication typically lags filing by around 18 months, the most recent one to two years in any trend understate actual filing activity and should be read as provisional.
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Filing trend and technology composition
Two views of the same 1,118-record corpus: how filing volume has moved year over year, and which IPC subclasses the claims actually sit in.
Filing trend: rise, peak, pullback
Filings rose from 72 in 2017 to a peak of 142 in 2020, then eased. From 2021 (112) to 2024 (75) — the most recent year that can be treated as complete — filings fell 33%. 2025 and 2026 figures are still filling in under the usual publication lag and should not be read as a continuation of that decline.
Where the claims concentrate
H01L (semiconductor devices) covers 52.9% of the 1,118 records and H10D a further 23.3%, confirming that most filings frame the invention as a device structure. Coating and deposition (C23C, 11.3%), inorganic compounds (C01B, 9.8%), materials testing (G01N, 8.9%) and crystal growth (C30B, 7.7%) appear at meaningfully lower density, and a record can carry more than one class.
Shares are the percentage of the 1,118 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on Two Dimensional Materials for Transistors with Eureka
This page is one run against one query. Ask Eureka your own question about two dimensional materials for transistors and every answer comes back with the patent numbers behind it.
Try EurekaA representative claim
Transition metal dichalcogenide transistor and preparation method thereof
The claim describes a transistor built from two different transition metal dichalcogenide layers stacked in the same plane: a metallic TMD forms the source/drain region and a semiconducting TMD forms the channel, with the channel, gate dielectric and gate each sized progressively smaller from bottom to top. Filed by Shanghai IC R&D Center, it targets contact resistance at the metal-semiconductor junction by using a materially different TMD for the contact rather than a conventional metal.Filed 2021-12-30 · US20210408296A1
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20170316487A1 | Optical biomodule for detection of diseases at an early onset | 171 |
| 2 | US20200035560A1 | Integrated circuit device structures and double-sided fabrication techniques | 159 |
| 3 | US20170338472A1 | Chemical-Free Production of Graphene-Encapsulated Electrode Active Material Particles for Battery Applications | 148 |
| 4 | US20170059514A1 | Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same | 141 |
| 5 | WO2017029470A1 | A method of producing a two-dimensional material | 138 |
| 6 | US11320588B1 | Super system on chip | 134 |
| 7 | US20190053347A1 | Methods and apparatus for vertically stacked multicolor light-emitting diode (LED) display | 91 |
| 8 | US20110200787A1 | Suspended Thin Film Structures | 87 |
| 9 | US20150318401A1 | Vertically stacked heterostructures including graphene | 76 |
| 10 | US20170102358A1 | Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same | 69 |
Citation counts reward older filings that have had more time to accumulate citations within this searched set; treat them as a signal of influence on the field, not of current commercial relevance.
Each row carries its publication number; clicking a row searches Eureka by that number.
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Browse MCP servers →What the numbers mean for a filing decision
Three read-outs from the trend and class data that matter more than the raw counts on their own.
The field is led, not fragmented
With the leading assignee alone holding 207 records and the top 5 combined covering 37.9% of the whole corpus, a new entrant is filing into a space where a handful of players already hold dense prior art on core device structures.
Volume has pulled back from its 2020 peak
Filings peaked at 142 in 2020 and had fallen to 75 by 2024, a complete year. That is a real pullback in new filing volume, not a data artefact, though 2025-2026 figures are still incomplete under the usual publication lag.
Device-structure claims crowd the top class
Over half of records sit in H01L and nearly a quarter also carry H10D, meaning device architecture claims are the busiest single area. Growth-process classes such as C30B (7.7%) and testing methods under G01N (8.9%) carry markedly less filing density.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to two dimensional materials for transistors, with the prior art for and against each one.
Who is filing, and where the activity has cooled
The ranked assignee list covers 100 companies counted by patent family; this is the entire list the data endpoint returns, not a curated top tier. Recent-year figures for individual assignees should be read cautiously given the same publication lag that affects the whole trend.
One assignee holds a clear lead
The top-ranked assignee's 207 records sit well above fifth place at 44 and tenth place at 20, a steep drop-off that marks this as a leader-plus-long-tail field rather than an evenly split one.
Recent-year activity is mixed among leaders
Some ranked assignees show a sharp pull-back in the latest year while at least one shows a YoY increase, though the absolute counts involved are small enough that a single filing swings the percentage.
Co-filing is limited and university-linked
Only 10 co-assignee pairs appear in the corpus, several of them pairing a major manufacturer with a university partner, which points to selective joint research rather than a broad collaboration network.
| Assignee | Recent year | YoY |
|---|---|---|
| Intel Corp | 4 | -67% |
| Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC) | 2 | +100% |
| Paragraf Ltd | 0 | — |
| Massachusetts Institute of Technology | 0 | — |
| Samsung Electronics Co., Ltd. | 0 | -100% |
| Lyten Inc | 0 | -100% |
| The Government of the United States of America as represented by the Secretary of Health & Human Services | 0 | — |
| International Business Machines Corporation | 0 | — |
Where to take this analysis
The landscape numbers point to specific next questions rather than a single conclusion.
Check freedom-to-operate against the leader's claim scope
With one assignee holding 207 records and the next four covering a further 217, any new filing on device structure should be checked against that concentration before drafting claims.
Explore assignee claim scopeTrack whether the 2021-2024 pullback continues
The 33% decline from 2021 to 2024 is based on complete years; 2025-2026 data will keep filling in for another 12-18 months and is worth re-checking before drawing conclusions about the field slowing.
Monitor filing trendsLook at the under-claimed branches directly
Wafer-scale transfer, gate dielectric integration and defect-density control carry thinner filing density than the core device-structure classes and warrant a closer prior-art check before committing to a claim strategy there.
Search white space in EurekaCommon questions on this landscape
One assignee leads the ranked list with 207 records, well ahead of fifth place at 44 and tenth place at 20. The top 5 assignees combined account for 37.9% of all 1,118 records in this dataset, and the top 10 account for 49.4%, so filing activity is concentrated among a small group rather than spread evenly. A freedom-to-operate check in this space should start with that leading group's claim scope before looking at the long tail of single- or few-filing entrants.
Filings rose steadily to a peak of 142 records in 2020, then declined to 112 in 2021 and 75 in 2024, a 33% drop over that three-year span using only complete years. Figures for 2025 and 2026 are still incomplete because publication typically lags filing by about 18 months, so the most recent years will rise as more records publish. It is accurate to say filing has pulled back from its 2020 peak, but premature to call the field currently declining based on the newest data points.
The largest share, 52.9% of the 1,118 records, falls under H01L (semiconductor devices), with a further 23.3% under H10D. Materials-process classes such as coating and deposition (C23C, 11.3%), inorganic compounds (C01B, 9.8%), materials testing (G01N, 8.9%) and crystal growth (C30B, 7.7%) appear at lower density. A single record can carry several of these classes, so the shares add to more than 100% and should not be treated as mutually exclusive categories.
The filing, from Shanghai IC R&D Center, claims a transistor where source and drain regions use a metallic-phase transition metal dichalcogenide and the channel uses a semiconducting-phase transition metal dichalcogenide, with a specific size relationship between channel, gate dielectric and gate layers. It does not block every TMD transistor design; it specifically covers the use of a differing-phase TMD as the contact material rather than a conventional metal contact. Designs using metal contacts, or a different geometric relationship between the layers, would sit outside this particular claim, though they may run into other filings in the same dense H01L/H10D class space.
Filing density is markedly lower in wafer-scale transfer processes without polymer residue, gate dielectric integration directly on monolayer channels, and defect-density control during CVD growth, compared with the crowded device-structure classes H01L and H10D. These are process and integration problems rather than device-architecture claims, and the class-level data (C30B at 7.7% and G01N at 8.9% of records) supports treating them as comparatively open. Any first claim there should focus tightly on a specific process step or measurable defect metric rather than a broad material composition, since broad composition claims are more likely to run into existing device-structure filings.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.