UV-C LED Efficiency Patents: Leaders, Trends & White Space 2026
- Filing already peaked. 2020 recorded 18 filings against 87 total families, and the count has since drifted back down rather than climbed.
- China dominates the filing venue. 48 of the tracked records were filed in China, more than the EPO, US, PCT, Taiwan and Germany combined.
- A tight cluster of co-filers controls the densest claim space. Three assignee pairs each share 29-31 co-filed records, concentrating the most defensible ground in a handful of related entities.
What the patent record shows about UV-C LED efficiency work
UV-C LED efficiency patents cluster tightly around light extraction, external quantum efficiency and droop mitigation — the three levers that determine whether a deep-UV chip is commercially usable rather than a lab curiosity. The dataset of 87 families spans 2015 through the current filing year, with almost all activity sitting inside a single IPC subclass, H01L, and the semiconductor-device claims built on top of it.
Filing rose steadily to a peak in 2020, then flattened and declined toward the midpoint year and beyond. That pattern reads less as an exhausted field and more as a technology that consolidated around a known set of structures — reflecting photonic-crystal layers, p-AlGaN thickness control, vertical chip architectures — after an initial wave of foundational filing.
Filing trend and technology composition
Two views of the same 87-family dataset: how filing activity has moved year over year, and which IPC subclasses the claims actually sit in.
A filing peak already behind us
Filings ran 3 in 2017, climbed to a peak of 18 in 2020, then eased to 6 at the 2022 midpoint. Because publication lags filing by roughly 18 months, the final year or two will always look thinner than it eventually turns out to be — but the shape from peak to midpoint is a real decline, not a data artefact.
Concentrated almost entirely in one subclass
All 87 records sit in H01L (semiconductor devices), with smaller overlaps into B82Y nanotechnology applications and H10D general semiconductor devices (7 records each), and single-digit spillover into coating/deposition (C23C) and crystal growth (C30B). That concentration means the claim space is not spread thin across adjacent fields — it is stacked in one place.
Shares are the percentage of the 87 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on UV-C LED Efficiency Enhancement with Eureka
This page is one run against one query. Ask Eureka your own question about uv-c led efficiency enhancement and every answer comes back with the patent numbers behind it.
Try EurekaThe most-cited records in this dataset
US20180198026A1 — Deep ultraviolet LED and method for manufacturing the same
The light extraction efficiency of a deep ultraviolet LED is increased. The deep ultraviolet LED has a design wavelength λ, and includes, sequentially arranged from a side opposite to a substrate, a reflecting electrode layer, a metal layer, a p-GaN contact layer, a p-AlGaN layer that is transparent to light with the wavelength λ, one of a multi-quantum barrier layer or an electron blocking layer, a barrier layer, and a quantum well layer. A thickness of the p-AlGaN layer is less than or equal to 100 nm. A reflecting photonic crystal periodic structure having a plurality of voids is provided in a region in a thickness direction including at least an interface between the p-GaN contact layer.Filed by Marubun Corporation, published 2018-07-12.


| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | CN111599906A | 一种垂直结构深紫外LED芯片的制造方法 | 16 |
| 2 | EP2942818A1 | Deep ultraviolet LED and method for manufacturing same | 15 |
| 3 | US20160133785A1 | Deep ultraviolet LED and method for manufacturing the same | 15 |
| 4 | CN111739989A | AlGaN基深紫外LED外延片及制备方法 | 13 |
| 5 | CN110808320A | 深紫外LED结构及其制作方法 | 10 |
| 6 | CN107863428A | 一种纳米级图形化衬底及其制作方法 | 10 |
| 7 | WO2017168811A1 | Deep ultraviolet LED and production method therefor | 10 |
| 8 | US20240304757A1 | Vertical structure deep ultraviolet light emitting diode, manufacturing method thereof and epitaxial structure | 8 |
| 9 | US9929317B2 | Deep ultraviolet LED and method for manufacturing the same | 8 |
| 10 | CN110265516A | 一种深紫外LED芯片及其制备方法 | 7 |
Citation counts inside a searched corpus favour older filings that have had more time to accumulate references — read them as a signal of influence on later filers, not as a ranking of current commercial relevance.
Patent titles are shown in the language they were filed in, not translated, so that each record stays verifiable against the original filing — a translated title will not match in Eureka or in any national register. Each row carries its publication number; clicking a row searches Eureka by that number.
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Three read-outs from the trend, venue and citation data that matter more than the raw counts on their own.
The wave has already crested
Filing built steadily to 2020 and has since fallen back toward roughly a third of peak volume by the midpoint year. That is consistent with a field that solved its first-generation structural problems and is now iterating rather than staking new foundational ground.
China is the primary filing venue, by a wide margin
Chinese filings outnumber the EPO, US, PCT, Taiwan and Germany combined, which shifts both the freedom-to-operate analysis and the likely first-examiner jurisdiction for anyone entering this space now.
The most-cited work is a vertical-chip fabrication method
The five most-cited records split between vertical-structure fabrication methods and epitaxial/AlGaN-based structural claims, with citation counts in the 10-16 range — a tight cluster rather than one outlier dominating the field.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to uv-c led efficiency enhancement, with the prior art for and against each one.
Who holds the ground, and where it is still open
Co-filing patterns point to a small number of tightly linked assignees controlling the densest claim space, with a long tail of single-filing entrants around them.
A small cluster files together repeatedly
The strongest co-assignee pairs in the dataset share between 29 and 31 records each, and the same handful of organisations recur across all three top pairs — a signature of a tightly coordinated equipment-and-materials filing strategy rather than independent competitors.
No assignee is currently accelerating
Every one of the leading assignees shows zero filings in the most recent tracked year. Given the 18-month publication lag this likely understates true activity, but it also means no single player is visibly pulling ahead right now.
Filing strategy is regionally concentrated, not global
Two-thirds of records route through China alone, with Europe and the US as secondary venues and only a handful of PCT, Taiwan and Germany filings. A new entrant's freedom-to-operate work should weight Chinese prior art heavily before anywhere else.
| Assignee | Recent year | YoY |
|---|---|---|
| ULVAC, Inc. | 0 | — |
| Tokyo Ohka Kogyo Co., Ltd. | 0 | — |
| RIKEN Corporation | 0 | — |
| Marubun Corporation | 0 | — |
| Toshiba Machine Co., Ltd. | 0 | — |
| Suzhou UVeek Technology Co., Ltd. | 0 | — |
| RIKEN (National Research and Development Agency) | 0 | — |
| Dai Nippon Printing Co., Ltd. | 0 | — |
Where to take this analysis
The trend and assignee data point to specific next steps depending on whether you are filing, licensing or scouting for acquisition targets.
Check freedom-to-operate against the China filing cluster
With 48 of 87 records filed in China and a tightly linked co-assignee cluster controlling the densest claims, any new structural or epitaxial approach needs a China-weighted prior-art search before proceeding.
Run a freedom-to-operate searchProbe the under-claimed branches before the next filing wave
Photonic-crystal geometry variants and sub-100nm p-AlGaN tuning show thinner claim density than the core vertical-chip fabrication methods — a narrower but more available filing target.
Explore white space in EurekaCommon questions about UV-C LED efficiency patents
The dataset shows filings climbing to a peak of 18 in 2020 before falling to 6 by the 2022 midpoint. This typically happens when a field's foundational structural problems — in this case light extraction and quantum-well design — get solved by an initial wave of filers, after which competitors shift to smaller iterative claims rather than filing new foundational patents. It does not necessarily mean interest in UV-C LEDs is declining; it more likely means the core architecture has stabilised. Because publication lags filing by around 18 months, the very last one to two years of any trend will always look thinner than they eventually turn out to be, so some of the apparent decline may still be an artefact of reporting lag.
Co-filing data shows a small cluster of closely linked assignees sharing the densest claim space, with the strongest co-assignee pairs each covering 29 to 31 shared records. This pattern is more typical of coordinated equipment, materials and research-institute partners filing together than of independent competitors racing each other. A full assignee ranking table, built from the same 87-family dataset, sits alongside this analysis and should be checked directly rather than inferred from citation counts alone, since citation leaders and filing-volume leaders are not always the same organisations.
External quantum efficiency measures how much of the light generated inside a UV-C LED chip actually escapes and becomes usable output, and it is one of the three defining terms this dataset was built around alongside wall-plug efficiency and light extraction. Patent claims addressing it typically target specific physical structures — photonic-crystal layers, reflecting electrode geometries, layer-thickness limits — rather than the efficiency outcome itself, since efficiency numbers are not directly patentable. Anyone drafting in this space should expect examiners to focus on the structural mechanism claimed, not the efficiency percentage cited in the specification.
Relative to the dense core of vertical-chip fabrication and AlGaN epitaxial structure claims, several adjacent branches show thinner filing density in this dataset: photonic-crystal void geometry variants, sub-100nm p-AlGaN thickness and transparency tuning, and non-vertical chip light-extraction architectures. These are not unclaimed fields, but they carry noticeably fewer records than the core structural claims that dominate the top-cited patents. A first filing in these branches should focus on a specific, narrow structural variant rather than a broad efficiency-outcome claim, since the surrounding prior art is thinner but not absent.
China accounts for 48 of the 87 tracked records, well ahead of the EPO (17), the US (13) and all other venues combined. This concentration reflects where the manufacturing and component-supply base for deep-UV LEDs and their epitaxial equipment is heavily located, which drives both defensive and offensive filing there. For freedom-to-operate purposes, this means Chinese-language prior art and Chinese patent examiners' prior rejections should be weighted more heavily than in fields where US or European filing dominates.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.