Wide-Bandgap Power Electronics Patents: Leaders & Filing Trends 2026
A patent landscape on dynamic on-resistance in wide-bandgap power electronics: who is filing, where the technology is concentrated, and where the white space sits.
Filing growth = 2021 (3 records) → 2024 (14); 2024 is the last year we treat as complete. Top-5 share = the 5 largest assignees ÷ all 128 records in scope (CR5), not the ranked leaders only.
What this landscape covers
Dynamic on-resistance is the gap between a wide-bandgap transistor’s resistance immediately after switching and its steady-state value. It matters because it determines real-world conduction loss and reliability margin in SiC and GaN power devices, and it has become a distinct claim territory sitting alongside core device structure patents. This landscape covers 128 published records from 2015 through the 2026 cut-off that name dynamic on-resistance explicitly in the title, abstract or claims of a wide-bandgap or power-semiconductor filing.
The scope spans two overlapping claim styles: device and layer-structure patents that reduce the effect at the transistor level, and separate measurement or characterization patents that quantify it as a test method. Both show up across the same IPC subclasses, which is why the technology composition below sums to more than the record total.
Filing trend and technology composition
Two views of the same 128 records: how filing activity has moved year over year, and which IPC subclasses carry the claims.
A clear acceleration through 2024, then a lag effect
Annual filings rose from 3 in 2017 to a peak of 24 in 2025, with the 2021-to-2024 span alone showing a +367% increase (3 to 14). 2025 and 2026 figures will keep revising upward as later-filed applications publish, so the apparent recent flattening is a publication-lag artifact rather than a slowdown in filing.
Publication lags filing by roughly 18 months, so 2025 onwards are still filling in. Growth rates on this page therefore end at 2024; running them to the last bar would understate the field.
Device claims dominate, but measurement claims are a distinct cluster
H01L (43.8% of records) and H10D (34.4%) cover core semiconductor device structure, while G01R (28.1%) is specifically electric and magnetic measurement — evidence that a meaningful share of this landscape is about characterizing dynamic on-resistance rather than eliminating it at the device level. H03K, H02M and the smaller subclasses each sit under 7% and mark narrower, more exploratory claim territory.
Shares are the percentage of the 128 records in scope. A patent can carry several IPC classes, so the shares add up to more than 100%.
Go deeper on Wide-Bandgap Power Electronics: Dynamic On Resistance Patent Landscape with Eureka
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Try EurekaRepresentative filing and citation leaders
Apparatus and method for measuring dynamic on-resistance of a nitride-based switching device
The filing describes a measurement apparatus for a nitride-based (GaN) device under test, using a controller-driven clamping architecture: a driving module senses the state change of the device and switches a first clamping module so that, in the on-state, the output voltage across two output nodes is clamped to indicate the drain-source voltage. A second clamping module and matching control logic complete the sense-and-clamp cycle.Filed by Innoscience (Suzhou) Semiconductor Co., Ltd. — a measurement-method claim rather than a device-structure claim.
| # | Publication no. | Patent title | Citations |
|---|---|---|---|
| 1 | US20120211800A1 | GaN HEMTs with a Back Gate Connected to the Source | 55 |
| 2 | US20140231823A1 | Electrodes for semiconductor devices and methods of forming the same | 41 |
| 3 | US8772832B2 | GaN HEMTs with a back gate connected to the source | 27 |
| 4 | CN104241352A | 一种具有极化诱导掺杂高阻层的GaN基HEMT结构及生长方法 | 22 |
| 5 | CN116047171A | 一种功率半导体场效应晶体管动态导通电阻的表征方法及装置 | 13 |
| 6 | US20190371930A1 | DOPING AND TRAP PROFILE ENGINEERING IN GaN BUFFER TO MAXIMIZE AlGaN/GaN HEMT EPI STACK BREAKDOWN VOLTAGE | 13 |
| 7 | GB2286434A | Gap seal between two moving components | 13 |
| 8 | CN106783945A | 一种GaN基增强型电子器件的材料结构 | 12 |
| 9 | US20230411507A1 | Normally-off p-gan gate double channel HEMT and the manufacturing method thereof | 10 |
| 10 | CN114597266A | 具有混合P型材料欧姆阴极的横向肖特基势垒二极管 | 9 |
Citation counts favour older filings in any searched corpus; treat these as markers of influence on later filings, not as a ranking of current technical importance.
Patent titles are shown in the language they were filed in, not translated, so that each record stays verifiable against the original filing — a translated title will not match in Eureka or in any national register. Each row carries its publication number; clicking a row searches Eureka by that number.
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Three signals worth acting on before drafting or opposing a claim in this space.
The top of the field is not a monopoly
The top 5 assignees hold 28.1% of all 128 records and the top 10 hold 41.4%, out of a ranked field of 74 companies. That leaves a long tail of single- or few-filing entrants — the field is contested but not locked up by one or two players.
Filing activity accelerated sharply through the last complete year
Annual filings rose from 3 in 2021 to 14 in 2024. 2025's headline count of 24 is the current peak, but 2025 and 2026 are still incomplete due to publication lag, so treat 2024 as the last reliable data point for trend claims.
China is the dominant filing venue by a wide margin
China's receiving office carries 61 of the 128 records, more than double the United States at 28. WIPO/PCT, India, EPO and the UK each carry single digits, suggesting most applicants are not yet pursuing broad multi-jurisdiction protection for this specific claim territory.
Measurement method claims are a distinct, separately ownable layer
Alongside the 43.8% of records in H01L and 34.4% in H10D device-structure classes, 28.1% also carry G01R measurement-and-characterization claims. A device patent and a measurement-method patent covering the same physical effect can be filed and held independently.
Eureka can read the same corpus for gaps instead of for coverage: under-claimed branches adjacent to wide-bandgap power electronics: dynamic on resistance patent landscape, with the prior art for and against each one.
Where to take this analysis
The dataset points to specific next steps depending on whether you are drafting, clearing, or scouting for licensing targets.
Map your own claim against the measurement cluster
If your work touches dynamic on-resistance characterization rather than device structure, the G01R cluster (28.1% of records) is the specific prior art set to search first, not the broader H01L device literature.
Explore this cluster in EurekaWatch the long tail for consolidation signals
With 74 ranked companies and only 41.4% of records held by the top 10, a single acquisition or licensing deal among mid-tier filers could shift concentration quickly. Track filing velocity among the fifth-to-tenth place assignees.
Set up assignee tracking in EurekaRevisit the 2025-2026 trend once publication catches up
The apparent plateau after 2024 is a publication-lag artifact. Re-run this trend analysis in Eureka in 12-18 months once later filings have published to see the real trajectory.
Track this trend in EurekaCommon questions on this landscape
Dynamic on-resistance is the temporary increase in a wide-bandgap transistor's on-state resistance immediately after switching, before it settles to its steady-state value. It matters commercially because it directly increases conduction losses and can undermine the efficiency gains that SiC and GaN devices are chosen for in the first place. It has become a distinct claim territory because fixes and measurement methods for it are patentable separately from the underlying device structure, which is why this landscape spans both device patents and measurement-method patents across overlapping IPC classes.
The ranked field covers 74 companies, with the leader holding 11 of the 128 records in scope and the top 5 combined holding 28.1% of all records. Concentration extends modestly further down the ranking, with the top 10 holding 41.4% of records, but well over half the field is spread across a long tail of companies with only a handful of filings each. This means no single company currently dominates the space, and freedom-to-operate analysis needs to check well beyond the top few names.
Yes, through the last complete year of data. Filings rose from 3 in 2021 to 14 in 2024, a +367% increase over that three-year span, and the raw count peaked at 24 in 2025. However, publication typically lags filing by roughly 18 months, so 2025 and especially 2026 figures are undercounted and will revise upward; they should not be read as evidence of a slowdown.
WO2023164900A1, filed by Innoscience (Suzhou) Semiconductor, claims an apparatus and method for measuring dynamic on-resistance of a nitride-based (GaN) switching device using a controller-driven clamping architecture. It is a measurement-method claim, not a device-structure claim, so it sits in the same IPC territory as other characterization patents (the G01R cluster) rather than competing directly with device patents that modify the transistor's physical layers to reduce the effect. Anyone building a dynamic on-resistance test rig or characterization tool for GaN parts should review this filing specifically.
Device-structure claims dominate this landscape — H01L and H10D together account for 43.8% and 34.4% of records respectively — while pulse-technique and power-conversion classes (H03K at 6.3%, H02M at 3.9%) are comparatively thin. That imbalance suggests the system- and circuit-level integration of dynamic on-resistance mitigation, as opposed to transistor-level fixes, has fewer entrenched claims and is worth a focused prior-art search before drafting there.
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Disclaimer. This page is generated from Patsnap Eureka data drawn from a limited snapshot of global patent and scientific-literature records, and is provided for general information and reference only.
Patent data carries inherent limitations: recent filings (typically the most recent 18–24 months) are under-counted due to standard publication lag; counts may be reported at either a patent-family or a patent-record basis and are not always directly comparable; classification, applicant-name, and citation data may contain errors, duplicates, or omissions; and the underlying search query defines and constrains the scope shown. As a result, the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing on this page constitutes an exhaustive prior-art, novelty, freedom-to-operate, or validity search, nor does it constitute legal, financial, investment, or professional advice, and it should not be relied upon as such. Any patent, commercial, or strategic decision should be verified independently and reviewed with qualified patent, legal, and domain professionals. Patsnap makes no warranties, express or implied, as to the accuracy, completeness, or fitness for any particular purpose of the information presented.
Machine translation. Assignee and organisation names originally recorded in Chinese, Japanese or Korean have been rendered into English by an AI translation step so that the tables stay readable. These renderings are best-effort and may not match a company’s registered English name; the original name is what the underlying patent record carries, and it is what any Eureka query launched from this page uses.