Wide-Bandgap Power Electronics Patents: Leaders & Filing Trends 2026
Wide-Bandgap Power Electronics Patents: Who Leads and Where the Filing Is Headed
Filing is concentrated but not locked up. the top 5 assignees hold 24.0% of all 391 records in scope, and the top 10 hold 39.4% — leaving a long tail of single- and few-filing entrants. Filings climbed from 30 in 2017 to a peak of 42 in 2022, then eased before the confirmed 2021→2024 rise of 27 to 36 (+33%). The 2025 and 2026 figures are undercounts pending publication and should not be read as a decline.
- 1ROHM CO LTD5.9%
- 2GE AVIATION SYSTEMS LLC4.9%
- 3HUAWEI DIGITAL POWER TECH CO LTD4.6%
- 4CAMBRIDGE GAN DEVICES LIMITED4.3%
- 5KYOCERA SLD LASER INC4.3%
See the full wide-bandgap power electronics patent landscape analysis in Eureka
- The complete ranking, not just the top five
- Every IPC branch with its share of the corpus
- The most-cited records, and where claim space is still thin
Frequently asked questions
Who holds the most wide-bandgap power electronics patents?
The dataset’s leading assignee holds 23 of the 391 records in scope, with a shallow drop-off to 17 records at fifth place and 9 at tenth. The top 5 assignees combined account for 24.0% of all records and the top 10 for 39.4%, meaning no single company has cornered the field. The ranked list covers 100 companies, so most of the activity sits in a long tail beyond the leaders.
Is the wide-bandgap power electronics patent field growing or slowing down?
Filings rose from 27 in 2021 to 36 in 2024, a confirmed 33% increase over that three-year span, with a peak of 42 filings in 2022. Counts for 2025 and 2026 appear lower, but that reflects the roughly 18-month lag between filing and publication rather than an actual decline. Treat any year within the last 18 months as an undercount, not a trend signal.
What does US12633815B2 actually cover?
US12633815B2, filed by North Carolina State University and published 2026-05-19, covers a method for operating paired silicon and wide-bandgap power devices at different gate switching frequencies within the same hybrid switch, aimed at reducing conduction and switching losses in high-current circuits. It is a control-scheme claim rather than a device-structure claim, so it sits alongside rather than blocks most semiconductor fabrication patents. Anyone designing multi-frequency paralleling schemes for SiC or GaN devices should review its claim scope directly.
Disclaimer. This analysis is based on Patsnap Eureka data drawn from a limited snapshot of global patent records and is provided for general information and reference only. Patent data carries inherent limitations — recent filings are under-counted because of publication lag, counts may be on a record or family basis, classification and applicant-name data may contain errors or duplicates, and the underlying search query defines the scope shown — so the analysis may be incomplete or inaccurate and may not reflect the full technology landscape.
Nothing here is an exhaustive prior-art, novelty, freedom-to-operate or validity search, nor does it constitute legal, financial or professional advice, and it should not be relied upon as such. Verify independently and review with qualified patent and legal professionals before acting on it.
Method: Filing trend and technology composition. Derived from a Patsnap search on Wide-Bandgap Power Electronics Patent Landscape covering 2015–2026, data cut-off 2026-08-31. Counts reflect published records only and shift as new filings publish. Every share divides by all records in scope. Data: Patsnap Eureka. See the full landscape report.